ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Zn-doped, p-type, Ga0.85In0.15As samples grown by low-pressure metalorganic vapor phase epitaxy, with free carrier concentrations in the range of 3.22×1015–1.95×1020 cm−3, have been studied by photoluminescence as a function of temperature. At low doping levels, recombinations involving discrete impurity states and free excitons provided a measurement of both the 0 K reference band gap, Eg(0)=(1.296±0.003) eV, and of the Zn acceptor binding energy, E(Zn0)=(25±3) meV in the Ga0.85In0.15As alloy. High doping concentrations cause a band gap shrinkage ||ΔEg|| which has been observed with photoluminescence experiments. A model taking into account Kane band tails and assuming a constant matrix element for the relevant optical transitions has been fitted to the photoluminescence spectra of layers with doping levels in the range of 1.6×1019–1.95×1020 cm−3. This provided a good description of the experimental results. The 0 K band gap shrinkage, which appeared to be smaller than in GaAs, follows the relation ||ΔEg||=1.4×10−8p1/3 for Ga0.85In0.15As, with ||ΔEg|| in eV and p in cm−3.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.352190
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