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  • 1
    Electronic Resource
    Electronic Resource
    X-ray grazing incidence diffraction from alkylsiloxane monolayers on silicon wafers (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 2854-2861 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: X-ray reflection (both specular and off-specular) and grazing incidence diffraction (GID) have been used to study the structure of alkylsiloxane monolayers (n-C18H37SiO1.5) formed by self-assembly from solution on silicon wafers. GID studies of complete monolayers reveal a single ring of scattering associated with the monolayer. The Lorentzian line shape of this ring indicates that the film is characterized by liquidlike order, with a typical translational correlation length of about 45 A(ring). The thermal coefficient of expansion of the monolayer, as determined from the GID peak position, is approximately equal to the value for liquid n-alkanes. Upon either heating or cooling, the monolayer correlation lengths decrease, suggesting that the differential thermal-expansion coefficients of the film and substrate figure prominently in thermal changes of the molecular ordering. GID data for incomplete monolayers also reveal a single ring of scattering associated with the monolayer. While both the translational correlation lengths and integrated peak areas are significantly reduced relative to complete monolayers, the peak positions of the incomplete monolayers are comparable to those of complete monolayers. Given the lower average areal density of incomplete monolayers, this finding implies that incomplete monolayers are inhomogeneous.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.460886
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  • 2
    Electronic Resource
    Electronic Resource
    Giant magnetoresistance at low fields in [(NixFe1−x)yAg1−y]/Ag multilayers prepared by molecular-beam epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3688-3694 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and magnetic properties of [111]-oriented multilayers comprising ferromagnetic films of Permalloy-silver alternating with Ag spacer films are described. The multilayers are grown by molecular-beam epitaxy on Pt(111) seed films on sapphire (0001) substrates at temperatures in the range 25–175 °C. For a series of multilayers with similar bilayer periods ((approximately-equal-to)50 A(ring)) the magnetoresistance (MR) is found to be strongly dependent on both growth temperature and subsequent annealing temperature. The multilayers exhibit a negative magnetoresistance in the as-grown state which more than doubles when the growth temperature is increased from 25 to 100 °C; however, the highest MR (peak 5.6%; maximum slope 0.4% per Oe) is obtained by annealing (at 400 °C) multilayers grown at 100 °C. The primary effects of annealing are an improvement of structural order, partial segregation of Ag from the ferromagnetic films into adjacent Ag films, a slight decrease in laminar order, and a reduction in long-wavelength roughness of the multilayer interfaces. No evidence is found for discontinuities in the magnetic layers with the highest MR.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357437
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  • 3
    Electronic Resource
    Electronic Resource
    Low field giant magnetoresistance and oscillatory interlayer exchange coupling in polycrystalline and (111)-oriented permalloy/Au multilayers (abstract) : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6617-6617 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The existence of oscillatory interlayer exchange coupling of ferromagnetic layers via (111)-oriented noble metal spacer layers is controversial. We present evidence from magnetic and giant magnetoresistance studies for well-defined antiferromagnetic interlayer coupling in single crystalline (111) permalloy/Au multilayers. Four oscillations in the coupling are observed as the Au spacer layer thickness is increased. The oscillation period is (approximately-equal-to)10 A(ring) which is significantly shorter than the period of (approximately-equal-to)11.5 A(ring) predicted in Ruderman–Kittel–Kasuya–Yosida based models. Similar oscillatory interlayer coupling is found in polycrystalline permalloy/Au multilayers prepared by dc magnetron sputtering. The interlayer coupling strength is significantly weaker in the polycrystalline as compared to the (111)-oriented crystalline samples. In both cases the coupling strength is weaker than in comparable structures containing Ag, for which the coupling is weaker than in similar structures containing Cu. The weakness of the antiferromagnetic interlayer coupling via Au leads to very low saturation fields, lower than for all other noble and transition metals. Indeed, the saturation fields are as low as just a few Oersted for sufficiently thick Au layers. Consequently, we find giant magnetoresistance values of (approximately-equal-to)1%/Oe or greater at room temperature in polycrystalline permalloy/Au multilayers. These values are the highest values yet reported in multilayer structures and are comparable to or greater than those recently reported in discontinuous permalloy/Ag multilayers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358180
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  • 4
    Electronic Resource
    Electronic Resource
    Giant magnetoresistance at low fields in [(NixFe1−x)yAg1−y]/Ag multilayers prepared by molecular beam epitaxy (abstract) : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6618-6618 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural changes that accompany the development of GMR (giant magnetoresistance) at low ((approximately-less-than)10 Oe) fields in annealed magnetic multilayers are of current interest because of potential applications of such structures in sensors. In this paper we report a study of the development of GMR in [111]-oriented multilayers comprising ferromagnetic films of a mixture of Ag and permalloy (NixFe1−x, x∼0.8) alternating with Ag spacer films. The multilayers were grown by molecular beam epitaxy (MBE) on Pt(111) seed films on sapphire (0001) substrates at temperatures in the range 20 to 200 °C. The structure of the multilayers was investigated using x-ray diffraction and electron microscopy. For a series of multilayers grown with nominally identical ferromagnetic and spacer layer thicknesses, the magnetoresistance is found to be strongly dependent on both growth temperature and subsequent annealing temperature. The multilayers exhibited a negative magnetoresistance in the as-grown state which more than doubled when the growth temperature was increased from 20 to 100 °C. However, the highest magnetoresistance (peak 5.6%; maximum slope 0.4% per Oe) was obtained by annealing (at 400 °C) multilayers grown at 100 °C. Transmission electron microscopy studies of such multilayers showed no evidence for discontinuities or penetration of the ferromagnetic films by Ag along grain boundaries. Thus, we conclude that discontinuous or granular multilayers with complete phase separation are not necessary for GMR with low saturation fields.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358181
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    X-ray scattering studies of the SiO2/Si(001) interfacial structure (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 706-708 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray scattering has been utilized in a study of the SiO2/Si(001) interfacial structure. Scattering data provide evidence for a low coverage 2×1 epitaxial structure at the SiO2/Si interface for dry oxides grown on highly ordered Si surfaces at room temperature. The observed scattering is consistent with distorted dimer models of the interfacial structure. Thermal annealing substantially reduces the order of the 2×1 structure while prolonged exposure to humid air almost eliminates the 2×1 symmetry scattering. These findings suggest that the observed 2×1 order is associated with a metastable, intermediate state of the dry oxidation process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105371
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  • 6
    Electronic Resource
    Electronic Resource
    X-ray reflectivity studies of SiO2/Si(001) (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3422-3424 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray reflectivity has been utilized in a study of the SiO2/Si interfacial structure for dry oxides grown at room temperature on highly ordered Si(001) surfaces. Scattering near (±110) demonstrates the Si lattice termination of the wafers studied is characterized by a highly ordered array of terraces separated by monoatomic steps. Specular reflectivity data indicate the "native'' dry oxide thickness is approximately 5 A(ring) with a 1-A(ring) vacuum interface width. Residual laminar order in the oxide electron density along the oxide/Si interfacial normal decays exponentially from the oxide/Si interface with a ∼2.7-A(ring) decay length.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105695
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Erratum: X-ray grazing incidence diffraction from alkylsiloxane monolayers on silicon wafers [J. Chem. Phys. 95, 2854 (1991)] (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 1754-1754 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465126
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