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  • 1
    Electronic Resource
    Electronic Resource
    Imaging high-temperature superconducting films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7178-7181 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A magneto-optically active glass, Ce(PO3)3, was used to image field penetration into three superconducting films of YBa2Cu3O7 that were laser ablated on (100)-oriented SrTiO3 substrates. The magnetic-field profile in these films was mapped using the Faraday effect in an external field of 92 mT for two of the films and 181 mT for the third film. These contours show regions where flux had easily penetrated, indicating weak pinning, and other regions that were strongly pinning. From the measured field gradients, it was determined that Jc varies by at least an order of magnitude across the surface of the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347610
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  • 2
    Electronic Resource
    Electronic Resource
    Magneto-optical characterization of YBa2Cu3O7 film uniformity (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1676-1678 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a magneto-optical technique, we have nondestructively imaged macroscopic variations in magnetic flux that penetrate laser-ablated, c-axis oriented, epitaxial YBa2Cu3O7 superconducting films deposited on crystalline (100)SrTiO3 substrates. Flux penetration into YBa2Cu3O7 films in an externally applied magnetic field is enhanced at crystalline substrate defect sites. A relationship between flux penetration and substrate defects is experimentally demonstrated with a YBa2Cu3O7 film deposited on an intentionally degraded crystalline SrTiO3 surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105108
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    In situ measurements of SiO(g) production during dry oxidation of crystalline silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 888-890 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report in situ measurements of SiO(g) evolution during the oxidation of silicon by O2 for a range of experimental conditions including the transition from active to passive oxidation. The results show that this transition occurs when the SiO(g) partial pressure reaches the equilibrium vapor pressure for the reaction Si(s)+SiO(s)(arrow-right-and-left)2SiO(g). During the growth of a SiO2 film, there is no significant transport of SiO molecules into the gas phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100105
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Transient response of quasiparticle injected superconducting links (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 489-491 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated submicron injection-controlled NbN links with gain and measured their injection-triggered superconducting-to-normal transition to occur in 0.5–2.6 ns at 4 K, governed by condensate dynamics. The transient pulse shape displays a rising-edge kinetic-inductance spike and a strong dependence on the amplitude of the injected quasiparticle current similar to microbridges driven by supercritical currents. A modified dynamic effective-temperature model is used to interpret the transient time and the pulse shape.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101861
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  • 5
    Electronic Resource
    Electronic Resource
    Shapiro steps on current-voltage curves of dc SQUIDs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 242-245 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied in detail the current-voltage (I-V) curves of dc SQUIDs in the presence of rf fields in the frequency range 2–18 GHz. Strong voltage locking at half-integral as well as the usual integral Shapiro step spacing is observed when the applied dc-magnetic flux is close to half-integral numbers of flux quanta. Numerical simulations are in excellent agreement with the experimental I-V curves. The half-integral steps are found to be associated with the flip-flop between two adjacent fluxoid states of the SQUID synchronized to the rf field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341471
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  • 6
    Electronic Resource
    Electronic Resource
    SiO2 film decomposition reaction initiated by carbon impurities located at a Si-SiO2 interface (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2424-2426 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have annealed Si-SiO2 structures at an elevated temperature in He(g) with SiO(g) added to the ambient. A SiO2 decomposition reaction that normally forms large voids in a thin SiO2 film during annealing in He(g) is not detected with the added SiO(g). Instead, chemically reactive SiC impurity sites which initiate the SiO2 decomposition reaction are found segregated along crystallographic planes in the substrate at the Si-SiO2 interface. The mechanism and technological importance of this interfacial reaction are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106036
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  • 7
    Electronic Resource
    Electronic Resource
    Chemical composition and interface chemistry of very thin Nb2O5 films prepared by rf plasma oxidation (1983)
    Springer
    Oxidation of metals 20 (1983), S. 185-192 
    Details
    ISSN: 1573-4889
    Keywords: Niobium oxide ; Nb2O5 ; thin films ; rf plasma oxidation ; XPS or ESCA
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Chemical composition of very thin niobium oxide layers grown on the surface of 200-nm niobium films was determined by X-ray photoelectron spectroscopy (XPS or ESCA). The oxides were fabricated by rf plasma oxidation under conditions that minimize the incorporation of impurities such as carbon in the Nb2O5 Josephson junction tunnel barriers. Nb 3d XPS core level peak positions, areas, and area ratios were used to determine the presence of different oxidation states of Nb, their relative abundance, and surface oxide thickness. The observed composition deviated from what is usually assumed for an ideal model superconductor-insulator structure. The oxide was incompletely oxidized Nb2O5-δ with δ decreasing from 0.2 to 0.1 with increasing oxide thickness from 2 to 4 nm. A 0.5-nm interface region was observed between the metal and oxide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00656840
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