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  • 1
    Digitale Medien
    Digitale Medien
    A new two-dimensional particle detector for a toroidal electrostatic analyzer (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 2679-2683 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: We describe a new two-dimensional detector for the detection of ions scattered from a solid target, analyzed in energy and scattering angle by a toroidal electrostatic analyzer. The detector resolves the scattering angle with a resolution of 0.4° over a range of 25°, and the ion energy with a resolution of 120 eV over a range of 2000 eV, at 100 keV ion energy. The energy resolution of the spectrometer was improved with a factor 4 relative to its previous performance with a one-dimensional scattering angle detector, while−at the same time−the dose efficiency (count/μC) was improved by a factor 5–10.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1142199
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  • 2
    Digitale Medien
    Digitale Medien
    Relaxation mechanism of Ge islands/Si(001) at low temperature (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2317-2319 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Strained layers generally relax by dislocation glide. Here, using UHV-TEM, we study growth of Ge islands on Si(001) at (approximately-less-than)350 °C. We find that, although conventional relaxation (i.e., via glide of 60° dislocations) is suppressed, the islands grow relaxed from the outset, by direct incorporation of sessile 90° dislocations into the edge of the growing island. Paradoxically, the low-temperature islands are more fully relaxed than those grown at higher temperature. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.115138
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  • 3
    Digitale Medien
    Digitale Medien
    Growth modes of Ge on GaAs(001) (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1680-1682 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have used low-energy electron microscopy to investigate the growth of Ge on GaAs(001)-c(2×8). Depending on the growth temperature we find a wide variety of growth modes: At 420 °C growth proceeds layer by layer, with nucleation of two-dimensional (2D) islands smaller than 150 A(ring) across. An increase of growth temperature to 450–480 °C enhances surface diffusion and results in formation of large anisotropic 2D islands on wide terraces along with denuded zones—and step flow—along the step edges. Further temperature increase transforms the growth mode to step flow. At 540 °C the growth mode becomes unstable, resulting in a roughening of the Ge surface.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.112884
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  • 4
    Digitale Medien
    Digitale Medien
    Growth dynamics of pentacene thin films (2001)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 412 (2001), S. 517-520 
    Details
    ISSN: 1476-4687
    Quelle: Nature Archives 1869 - 2009
    Thema: Biologie , Chemie und Pharmazie , Medizin , Allgemeine Naturwissenschaft , Physik
    Notizen: [Auszug] The recent demonstration of single-crystal organic optoelectronic devices has received widespread attention. But practical applications of such devices require the use of inexpensive organic films deposited on a wide variety of substrates. Unfortunately, the physical properties of these organic ...
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1038/35087532
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