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  • 1
    Electronic Resource
    Electronic Resource
    Homoepitaxial growth of GaN using molecular beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2195-2198 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, experimental results are presented for the homoepitaxial deposition of a GaN overlayer onto a bulk single-crystal GaN substrate using molecular beam epitaxy. Transmission electron microscopy shows a superior structural quality of the deposited GaN overlayer when compared to heteroepitaxially grown layers. Photoluminescence shows narrow excitonic emission (3.467 eV) and the very weak yellow luminescence, whereas the bulk substrate luminescence is dominated by this deep level emission. These results show that homoepitaxy of GaN can be used to establish benchmark values for the optoelectronic properties of GaN thin films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363112
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of substrate temperature on chemical structure of amorphous carbon films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2243-2248 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous carbon thin films were prepared at 30, 200, and 450 °C by magnetron sputtering of a graphite target. The surface structure and chemical bonding (sp2/sp3) of the carbon films were characterized by scanning tunneling microscopy (STM) and Raman spectroscopy. STM images show that graphite microcrystallites of 20–40 A(ring) in size are present at the surfaces of all the films and the number of the microcrystallites increases with increasing substrate temperature. The microcrystallites often contain structural defects. Raman measurements show that increasing the substrate temperature results in an increase in the sp2-bonded fraction of carbon atoms and a decrease in the microstructural defects. These results indicate that the microstructural changes are correlated with changes in the chemical bonding ratio (sp3/sp3) and no diamond microcrystallites are present in the amorphous carbon. A three-dimensional atomic structure of the graphite microcrystallites is discussed in terms of turbostratic graphite.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351122
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  • 3
    Electronic Resource
    Electronic Resource
    Switchable mirrors based on nickel–magnesium films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3047-3049 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electrochromic mirror electrode based on reversible uptake of hydrogen in nickel magnesium alloy films is reported. Thin, magnesium-rich Ni–Mg films prepared on glass substrates by co-sputtering from Ni and Mg targets are mirror-like in appearance and have low visible transmittance. Upon exposure to hydrogen gas or on cathodic polarization in alkaline electrolyte, the films take up hydrogen and become transparent. When hydrogen is removed, the mirror properties are recovered. The transition is believed to result from reversible formation of Mg2NiH4 and MgH2. A thin overlayer of palladium was found to enhance the kinetics of hydrogen insertion and extraction, and to protect the metal surface against oxidation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1371959
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  • 4
    Electronic Resource
    Electronic Resource
    Thermal annealing characteristics of Si and Mg-implanted GaN thin films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2702-2704 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report the results of ion implantation of GaN using 28Si and 24Mg species. Structural and electrical characterizations of the GaN thin films after thermal annealing show that native defects in the GaN films dominate over implant doping effects. The formation energies of the annealing induced defects are estimated to range from 1.4 to 3.6 eV. A 40 keV 1014 cm−2 Mg implant results in the decrease of the free-carrier concentration by three orders of magnitude compared to unimplanted GaN up to an annealing temperature of 690 °C. Furthermore, we have observed the correlation between these annealing-induced defects to both improved optical and electrical properties. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116314
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  • 5
    Electronic Resource
    Electronic Resource
    Mixed metal films with switchable optical properties (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1349-1351 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin, Pd-capped metallic films containing magnesium and first-row transition metals (Mn, Fe, Co) switch reversibly from their initial reflecting state to visually transparent states when exposed to gaseous hydrogen or following cathodic polarization in an alkaline electrolyte. Reversion to the reflecting state is achieved by exposure to air or by anodic polarization. The films were prepared by cosputtering from one magnesium target and one manganese, iron, or cobalt target. Both the dynamic optical switching range and the speed of the transition depend on the magnesium-transition metal ratio. Infrared spectra of films in the transparent, hydrided (deuterided) states support the presence of the intermetallic hydride phases Mg3MnH7, Mg2FeH6, and Mg2CoH5. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1454218
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  • 6
    Electronic Resource
    Electronic Resource
    cis-4,5-Dihydroxy-2,3,4,5-tetraphenylcyclopent-2-enone (1996)
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 52 (1996), S. 2936-2939 
    Details
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108270196006944
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