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  • 1
    Electronic Resource
    Electronic Resource
    Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6726-6730 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of the gate leakage current fluctuations on noise properties of AlGaN/GaN heterostructure field effect transistors (HFETs) has been studied in conventional HFET structures and in AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors (MOS-HFETs). The comparison of the noise properties of conventional AlGaN/GaN HFETs and AlGaN/GaN MOS-HFETs fabricated on the same wafer, allowed us to estimate the contribution of the gate current noise to the HFET's output noise. The effect of the gate current fluctuations on output noise properties of HFETs depends on the level of noise in the AlGaN/GaN HFETs. For the transistors with a relatively high magnitude of the Hooge parameter α∼10−3, even a relatively large leakage current Ig (Ig/Id∼10−3–10−2, where Id is the drain current) does not contribute much to the output noise. In HFETs with a relatively small values of α (α∼10−5–10−4), the contribution of the leakage current to output noise can be significant even at Ig/Id∼10−4–10−3. For such transistors, a very rapid increase of the 1/f noise with gate bias was observed. The differences in the noise behavior can be linked to the material quality of the AlGaN and GaN layers in different types of HFETs. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1321790
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  • 2
    Electronic Resource
    Electronic Resource
    1/f noise in pentacene organic thin film transistors (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5395-5399 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the flicker (1/f ) noise in pentacene organic thin film transistors (TFTs) of different designs. Our studies show that the TFT design affects the noise level and the noise dependence on the gate- and drain-source biases. The measured noise level was the lowest for the TFTs with a top source and drain contacts design. For these devices, the noise dependence at low drain current values resembled that for n-type crystalline Si metal–oxide–semiconductor field-effect transistors. The extracted Hooge parameter α, which allows comparing the noise level in different devices and materials, was 0.045 for the top-contact TFTs. This parameter value is several orders of magnitude lower than that for conducting polymers and only several times higher than that for hydrogenated amorphous Si (α-Si:H) TFTs. The bottom source and drain contacts TFTs had a much higher noise level with a noise dependence on the terminal voltages that differed from the noise voltage dependence for the top-contact TFTs. The Hooge parameter values were in the range of 5–20 for the bottom-contact TFTs. We estimated that the contact noise could be comparable to the channel noise for both top-contact and bottom-contact TFTs. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1314618
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  • 3
    Electronic Resource
    Electronic Resource
    Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 310-314 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The low frequency noise in GaN field effect transistors has been studied as function of drain and gate biases. The noise dependence on the gate bias points out to the bulk origin of the low frequency noise. The Hooge parameter is found to be around 2×10−3 to 3×10−3. Temperature dependence of the noise reveals a weak contribution of generation–recombination noise at elevated temperatures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1372364
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  • 4
    Electronic Resource
    Electronic Resource
    Low-frequency noise in n-GaN with high electron mobility (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5075-5078 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the results of measurements of low frequency noise in n-type gallium nitride (GaN) grown on sapphire with 300 K electron mobility of 790 cm2/V s. The noise spectra have the form of 1/f noise with a Hooge parameter α of approximately 5×10−2. This value of α is two orders of magnitude smaller than that observed before in n-GaN. The obtained results show that the level of flicker noise in GaN, just like that in GaAs and Si, strongly depends on the structural perfection of the material (the amplitude of the 1/f noise is much smaller in material with high mobility). The effects of band-to-band illumination on the low-frequency noise show that 1/f noise in GaN might be caused by the occupancy fluctuations of the tail states near the band edges. This mechanism of the 1/f noise is similar to that in GaAs and Si. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371482
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  • 5
    Electronic Resource
    Electronic Resource
    Low frequency noise in 4H silicon carbide (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1758-1762 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The bulk low frequency noise has been investigated in the 4H silicon carbide polytype. In the temperature range of 300–550 K the noise spectral density S is proportional to f−1.5, where f is the measurement frequency. A very low noise level has been observed for the bulk noise. At 300 K, the Hooge constant α is as small as (2–4)×10−6 at f=20 Hz and α≤5×10−7 at f=1300 Hz. At T≥600 K, the generation-recombination noise of a local level makes the main contribution into the total low frequency noise. The electron capture cross section σ of this level depends very strongly on temperature. In the temperature range of 620–700 K, the temperature dependence of σ can be expressed as σ∼exp(−E1/kT), with an activation energy E1 as high as 2.7 eV. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364007
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  • 6
    Electronic Resource
    Electronic Resource
    AlGaN/GaN high electron mobility field effect transistors with low 1/f noise (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1089-1091 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-frequency noise in the frequency region of 20 Hz to 20 kHz is investigated in AlGaN/GaN high electron mobility transistors (HEMTs) grown on SiC substrates. The noise spectra have the form of the 1/f (flicker) noise. The measured Hooge parameter is as low as 0.0001. This value is comparable with Hooge parameter values for commercial GaAs field effect transistors and approximately two orders of magnitude smaller than Hooge parameter value measured for AlGaN/GaN heterostructures grown on sapphire. The level of noise depends on the gate leakage current; the noise is much higher in devices with a high gate leakage current. The small measured values of the Hooge parameter are related to a smaller leakage current and to a better material quality of the devices on SiC substrates and to a high electron sheet density. The low levels of the 1/f noise in the AlGaN/GaN HEMTs on SiC substrates make them suitable for applications in communication systems. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122093
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  • 7
    Electronic Resource
    Electronic Resource
    Low-frequency noise in 4H–silicon carbide junction field effect transistors (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2669-2671 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low frequency noise in 4H-silicon carbide junction field effect transistors (JFETs) has been investigated. JFETs with a buried p+n junction gate were manufactured by CREE Research Inc. Very low noise level has been observed in the JFETs. At 300 K the value of Hooge constant α is as small as α∼10−5 and the α value can be decreased by an appropriate annealing to α∼2×10−6. It has been shown that even these extremely low noise values are determined not by the volume noise sources but by the noise at the SiC–SiO2 interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116276
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  • 8
    Electronic Resource
    Electronic Resource
    Low frequency noise in two-dimensional metal-semiconductor field effect transistor (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3138-3140 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low frequency noise in the two-dimensional metal-semiconductor field effect transistor (2D-MESFET) is reported. It is shown that the noise level S is rather small. At room temperature the value of Hooge constant α was about 2×10−5 for frequency f=20 Hz. The frequency dependence of the relative spectral density of current fluctuations SI/I2 at 300 K was close to S∼1/f0.6 in the frequency range 20 Hz–20 kHz. Two local maxima were observed in the temperature dependence of S in the ranges 100–180 K and 200–300 K. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115803
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  • 9
    Electronic Resource
    Electronic Resource
    Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 866-868 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The low-frequency generation recombination and the 1/f noise in AlGaN Schottky barrier photodetectors with high (40%) Al fraction has been investigated under forward and reverse bias conditions. The activation energy of local level contributing to noise was found to be Ea(approximate)1 eV. Depending on the forward current level, the noise from Schottky barrier or from the series resistance (contacts and/or base) predominates. The upper bound of the Hooge parameter in Al0.4Ga0.6N was estimated as α≤10. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1385191
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  • 10
    Electronic Resource
    Electronic Resource
    1/f noise in strongly doped n-type GaAs under band-band illumination conditions (1997)
    Springer
    Semiconductors 31 (1997), S. 728-732 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The nature of 1/f noise, which appears in strongly doped n-type GaAs (electron density n 0⋍1017 cm−3) under band-band illumination, has been investigated by measuring the low-frequency noise under high geometric magnetoresistance conditions. It is shown that such noise is of a volume nature and is due to carrier number (and not mobility) fluctuations. It is shown experimentally for the first time that surface noise can be distinguished from volume noise by performing measurements under high geometric magnetoresistance conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187078
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