Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
81 (1997), S. 1758-1762
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The bulk low frequency noise has been investigated in the 4H silicon carbide polytype. In the temperature range of 300–550 K the noise spectral density S is proportional to f−1.5, where f is the measurement frequency. A very low noise level has been observed for the bulk noise. At 300 K, the Hooge constant α is as small as (2–4)×10−6 at f=20 Hz and α≤5×10−7 at f=1300 Hz. At T≥600 K, the generation-recombination noise of a local level makes the main contribution into the total low frequency noise. The electron capture cross section σ of this level depends very strongly on temperature. In the temperature range of 620–700 K, the temperature dependence of σ can be expressed as σ∼exp(−E1/kT), with an activation energy E1 as high as 2.7 eV. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.364007
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