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  • 1
    Electronic Resource
    Electronic Resource
    Transport and near-infrared optical properties of ErSi2 thin films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4295-4299 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the study of the resistivity and Hall coefficient of ErSi2 thin films epitaxially grown on a Si substrate as a function of temperature and film thickness. Then, we report the first study of the complex index at energies below the silicon band gap (0.5–1 eV). From these data we calculate the absorption length in ErSi2, which is a critical parameter for the design of an efficient silicide silicon photodetector.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352191
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  • 2
    Electronic Resource
    Electronic Resource
    Origin of the bimodal distribution of low-pressure metal-organic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3859-3863 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation process of a bimodal distribution of low-pressure metal-organic-vapor-phase-epitaxy (LP–MOVPE) grown InGaAs/GaAs quantum dots (QDs) is studied by transmission electronic microscopy. We demonstrate that in our growth conditions, the deposition of an InGaAs layer on an already existing array of InAs formed QDs leads to the nucleation of a second dots population. The InAs QDs nucleation is diffusion limited, inducing a low dots density due to the high In-atoms diffusion length typical of the MOVPE. On the contrary, the InGaAs QDs nucleation is enhanced by the roughness of the highly strained wetting layer of the InAs QDs, leading to higher density. The study of the photoluminescence spectra shows that the nucleation of InGaAs only occurs when the deposited InAs thickness exceeds about 1.4 monolayers, i.e., after the formation of the InAs QDs. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1448887
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  • 3
    Electronic Resource
    Electronic Resource
    Optical absorption evidence of a quantum size effect in porous silicon (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1155-1157 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This study presents optical transmission measurements performed on free-standing homogeneous porous silicon (PS) films of different porosities and substrate doping levels. The absorption coefficient curves deduced from these measurements, taking into account the total quantity of matter in the PS film, exhibit significant blue shift (up to 500 meV). These shifts, well correlated with the crystallite size variations with porosity and substrate doping observed by electron microscopy and gas adsorption experiments, are attributed to quantum size effects in the silicon microcrystallites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108773
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  • 4
    Electronic Resource
    Electronic Resource
    Photoinduced intersubband absorption in Si/SiGe quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2948-2950 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated photoinduced infrared absorption in p-doped Si/SiGe quantum wells. The absorption spectra exhibit two distinct features: free-carrier absorption and intersubband absorption in the valence band. The photoinduced absorption in both p and s polarizations is found to depend on the carrier density and strongly differs from the original absorption of the doped quantum wells. Photoinduced intersubband absorption is attributed to carriers away from the Brillouin zone center. We show that photoinduced intersubband absorption spectroscopy can provide useful information on valence band mixing effects in Si/SiGe quantum wells. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114821
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  • 5
    Electronic Resource
    Electronic Resource
    Absorption and resonant dispersion associated with normal incidence intersubband transitions in Si/SiGe quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3462-3464 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Modulation of midinfrared beam by photoinduced intersubband absorption in undoped Si/SiGe quantum wells is investigated at normal incidence. Optical pumping of interband transitions is used to photocreate carriers in the wells. The modulated transmission of the sample is measured by Fourier transform spectroscopy. Resonant dispersion associated with intersubband transitions as well as interference effects in the quantum well stack are clearly evidenced. It is shown that the phase modulation due to refractive index variations may compensate for amplitude modulation due to absorption. Measurements are well fitted by a phenomenological model. It is also shown that the modulation depth and the wavelength modulation profile both depend on the interband excitation wavelength. This result is attributed to the different nature of photoinduced transitions according to the excitation wavelength. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115247
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  • 6
    Electronic Resource
    Electronic Resource
    Intersubband relaxation time in the valence band of Si/Si1−xGex quantum wells (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3069-3071 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the saturation of intersubband absorption and the intersubband relaxation time in the valence band of Si/SiGe quantum wells. The quantum wells consist of 3 nm thick p-doped Si0.8Ge0.2 layers separated by 20 nm thick silicon barriers. At room temperature, these quantum wells exhibit intersubband absorption in p polarization (component of the electric field parallel to the growth axis), which peaks around 130 meV (≈10 μm). The saturation of intersubband absorption has been investigated using a picosecond free electron laser by two different techniques. The intersubband absorption is first analyzed as a function of the pump intensity. The saturation is found to occur around 90 MW/cm2, which yields a characteristic lifetime T1≈0.7 ps. In a second set of experiments, the lifetime is determined by time-resolved pump and probe experiments in cross polarization. The intersubband transition is pumped in p polarization and the saturated absorption is probed with a delayed beam in s polarization. An intersubband lifetime ≈0.4 ps is deduced by this technique. The saturation behavior is analyzed in terms of an inhomogeneously broadened two-level system. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116842
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  • 7
    Electronic Resource
    Electronic Resource
    Enhancement of second-harmonic generation in a one-dimensional semiconductor photonic band gap (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3021-3023 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate significant enhancement of second-order nonlinear interactions in a one-dimensional semiconductor Bragg mirror operating as a photonic band gap structure. The enhancement comes from a simultaneous availability of a high density of states, thanks to high field localization, and the improvement of effective coherent length near the photonic band edge. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1372356
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  • 8
    Electronic Resource
    Electronic Resource
    Room temperature enhancement and inhibition of spontaneous emission in semiconductor microcavities (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1345-1347 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated planar semiconductor microcavities with metallic mirrors in which we have observed both enhancement and inhibition of spontaneous emission, at room temperature. Our results are quantitatively accounted for by modeling the band-to-band emission as arising from point dipoles. Observation of these cavity quantum electrodynamics effects in room temperature semiconductor structures opens the way to optoelectronic devices with controlled spontaneous emission. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290144
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  • 9
    Electronic Resource
    Electronic Resource
    Bimodal distribution of Indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2157-2159 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-pressure metalorganic-vapor-phase-epitaxy (LP-MOVPE) grown InGaAs/GaAs quantum dots (QDs) emitting around 1.3 μm have been studied by photoluminescence and transmission electron microscopy (TEM). We demonstrate the presence of a bimodal inhomogeneous broadening of the photoluminescence, correlated with a bimodal QDs contrast distribution in the TEM micrographs. Increasing the growth temperature of the dots induces a decrease of the ratio between the number of In-poor and In-rich QDs, illustrating the crucial influence of indium desorption on the LP-MOVPE growth of InGaAs QDs. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1406553
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  • 10
    Electronic Resource
    Electronic Resource
    Strain and composition of capped Ge/Si self-assembled quantum dots grown by chemical vapor deposition (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 370-372 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the composition and the strain profile of Ge/Si self-assembled quantum dots. The quantum dots, grown by low-or high-pressure chemical vapor deposition, were covered by a silicon cap layer. The composition and the strain were measured by the selected area transmission electron diffraction of a single quantum dot. The self-assembled quantum dots exhibit a quadratic deformation. No lateral relaxation of the lattice is observed from the main part of the quantum dot. An average composition of Ge around 50% is deduced. The average composition is found dependent on the size of the islands. This composition is correlated to the photoluminescence energy. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126979
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