Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Subband structures and wave functions of electrons in quantum wires and in-plane superlattices consisting of grid-inserted quantum-well structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2722-2724 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study theoretically the wave functions and dispersion relation of electrons in grid-inserted GaAs quantum-well structures, where very thin AlAs rods are periodically inserted in the middle of quantum wells with a typical spacing of 100 A(ring). It has been found that when the grid thickness is even a few monolayers, the electronic motion along the lateral direction is strongly modified, resulting in the formation of both quantum-wire states and in-plane superlattice states. For example, when the width and spacing of the grid are 81 A(ring), the ground miniband width becomes as small as 12 meV for the grid thickness of one monolayer (ML) and can be further reduced to 4 meV when the grid thickness is 5 ML. It is further shown that the effect of grid potential is strongly dependent on the shape of the wave functions, and the lateral confinement is effective only for those having high amplitude in the central portion of the quantum well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348625
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Surface diffusion processes in molecular beam epitaxial growth of GaAs and AlAs as studied on GaAs (001)-(111)B facet structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4138-4144 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mechanisms of molecular beam epitaxy have been investigated for GaAs and AlAs by growing and analyzing the shapes of facet structures consisting of an (001) top surface and two (111)B side surfaces. It is found that all of the Ga flux on the three facet planes is incorporated into the film, but the growth rates on (111)B and (001) depend strongly on the As flux and are mainly determined by the diffusion of Ga ad-atoms between the two planes. In contrast, the diffusion of Al is found to be almost negligible, irrespective of the As flux. By analyzing the shape of the facet, the diffusion length, λ, of Ga on a (001) surface is estimated to be about 1 μm at 580 °C, while that of Al is about 0.02 μm. On (111)B, λ of Ga is found to be several μms. The reflectivity of diffusing Ga atoms is found to be far less than 1 for the (001)-(111)B boundary, and almost unity at facet boundaries where the (111)B side surfaces are bound by the (11¯0) side walls.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357364
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Acoustic-phonon limited mobility in periodically modulated quantum wires (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4231-4236 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate acoustic-phonon scattering in quantum wires subject to a periodic potential along the propagating direction. A technique for modeling the electronic structure of the periodic system is introduced using the imaginary time propagation method. The acoustic-phonon scattering rate is evaluated by taking umklapp processes into account. We found umklapp processes can cause a significant increase in intersubband scattering but is negligible for intrasubband scattering. Overall, the exact treatment of the electron dispersion relation improves the acoustic-phonon limited mobility compared to earlier estimates [H. Noguchi, J. P. Leburton, and H. Sakaki, Phys. Rev. B 47, 15593 (1993)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357331
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Electronic structure of the ridge quantum wire based on an analytic confinement model (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 269-272 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electronic structure calculation for the novel quantum wire structure recently fabricated and named the "ridge quantum wire'' [Koshiba et al., Appl. Phys. Lett. 64, 363 (1994)] is reported. In the calculation, the actual confinement potential was approximated by an analytic model, which considerably facilitates the solution of the Schrödinger equation by the finite element method. The result clearly indicates the strong confinement of both electrons and holes. Also the quantization energy obtained, with exciton effects included, is in good agreement with the photoluminescence peak energy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360941
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Field-effect transistors using alkyl substituted oligothiophenes (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1500-1502 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Field-effect transistors (FETs) have been prepared using thin films of alkyl substituted oligothiophenes. These compounds bring about a significant increase in the source-drain channel current when compared to the conventional nonsubstituted oligothiophenes. The increased channel current mostly results from the enhanced carrier mobility of the material. We report that the FETs are readily made by a single routine process of casting or evaporation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105158
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Ultrahigh vacuum atomic force microscope study of 10–30 nm scale GaAs ridge structure formation by molecular beam epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 883-885 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of GaAs ridge structure formation by molecular beam epitaxy on a patterned substrate has been investigated using an ultrahigh vacuum atomic force microscope. It is found that the morphology of ridges can be quite irregular with random formation of various facets in the intermediate phase of growth, but self-smoothing processes of the lateral facets take place later on, leading to very sharp and smooth ridge structures in the end. The ridge top is quite sharp and straight with the height fluctuation of within 1–2 nm over the length of 1.4 μm. The role of the Ga atom flows from the side (111)B surfaces to the top (001) surface and their local modulations are considered to account for these observations. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118303
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Resonant tunneling of electrons via 20 nm scale InAs quantum dot and magnetotunneling spectroscopy of its electronic states (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 105-107 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The resonant tunneling of electrons through a 20 nm scale InAs quantum dot bound by a pair of very thin AlAs barriers is studied. A well-resolved composite peak resulting from the ground 1s states was observed at 4.2 K in current–voltage characteristics. By investigating the effects of inplane magnetic fields, the shape of the wave function and the spatial extent of the first two electronic states are clarified. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119276
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Time-resolved D-band luminescence in strain-relieved SiGe/Si (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1889-1891 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temporal decay characteristics of dislocation-related luminescence bands (D1–D4) were explored in strain-relieved epitaxial SiGe/Si(100). Close similarity of the decay profiles was observed not only between D1 and D2 bands but also between D3 and D4 bands. The decay transients of the D1 and D2 bands at low temperatures are characterized by long decay times, τ(approximately-greater-than)200 ns, whereas the D3 and D4 bands exhibit even sharper transients with τ〈60 ns. Temperature dependence of "radiative'' lifetimes implies a free-to-bound nature of the D1 and D2 bands, while a bound-to-bound character of the luminescence origins for the D3, D4 bands. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116284
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Observation of a short optical pulse (〈1.3 ps) from a gain-switched quantum well laser (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1580-1582 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Short light pulse generation from an optically pumped GaAs/AlGaAs quantum well laser is measured. The shortest pulse width achieved so far is less than 1.3 ps. In addition, it is found that the pulse from varies randomly even when the same excitation condition, which results from stochastic behavior of the spontaneous emission coupling to the lasing mode. In order to discuss these results in more detail, spatial dependent rate equations are analyzed in which the stochastic process of the spontaneous emission and the traveling effect of spontaneously generated optical wave packets are included.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99955
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Picosecond pulse generation (〈1.8 ps) in a quantum well laser by a gain switching method (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1295-1297 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A picosecond pulse (〈1.8 ps) at 8570 A(ring) is successfully generated by a gain switching method in an optically pumped GaAs/AlGaAs multiquantum well laser with a cavity length of 155 μm. This is the narrowest pulse width so far achieved in semiconductor lasers without the external cavity. We believe that this short pulse generation results from the enhanced differential gain due to the two-dimensional properties of the carriers in the quantum wells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98707
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...