Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Distribution of atoms in mixed III-V compounds (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 966-968 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In mixed III-V semiconductors, AB1−xCx, the atoms are supposed to be randomly distributed. Using resonant Raman scattering as a probe, we determined the departure from a random distribution inside small volumes of the order of V(approximately-equal-to)(50 A(ring))3. It has been shown that the frequency splitting of the vibrational modes in the allowed and forbidden configuration can be attributed to the deviation from the nominal composition x within the characteristic volume of the electron-phonon interaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340043
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Stimulated emission spectra of AlxGa1−xAs near the direct-indirect gap crossover composition (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 780-786 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stimulated emission spectra of photoexcited AlxGa1−xAs, 0.42≤x≤0.46 (near the direct-indirect gap crossover xc =0.435) were measured at low temperatures as a function of the illuminated stripe length and excitation intensity. Based on these data, the gain spectra and gain saturation behavior were obtained. The observed gain spectra are explained by calculating the radiative recombination of an electron-hole plasma of constant density with fair agreement between theory and experiment. It is found that above xc the gain spectrum is due to electrons in the indirect-gap minima (X) whose wave function is strongly admixed with the (Γ) minimum by alloy disorder. The saturation of the stimulated emission at higher excitation intensity and at larger stripe length could be explained qualitatively for the direct-gap samples by a model based on electron and hole relaxation within their respective Fermi seas. This model yields the stimulated emission shift towards lower energy with increased excitation intensity or stripe length. The behavior of the indirect-gap samples is different: both ends of the gain spectrum saturate. This behavior cannot be explained by the proposed model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336598
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    On the evolution of GaInAs/GaAs strained epitaxial layers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1744-1747 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We find that in a highly lattice-mismatched heteroepitaxial growth, as critical thickness is reached, defects are formed within a thin layer at the surface and do not necessarily propagate to the interface. At that thin layer the strain is locally decreased resulting in a larger lattice parameter, which persists until the next step takes place. This procedure is inferred from the Raman scattering data of InxGa1−xAs/GaAs. Disorder induced Raman spectroscopy in a scattering forbidden configuration is shown to be an extremely sensitive tool for observing this stepwise release of the strain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351207
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Pseudomorphic high electron mobility heterostructures with extremely high conductivity using Te as n-type dopant by low-pressure metal organic chemical vapor deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 357-361 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs single-quantum-well structures have been grown by low-pressure metal organic vapor phase epitaxy and characterized by Hall, C-V measurements, and photoluminescence spectroscopy. The use of tellurium instead of silicon as an n-type dopant for AlxGa1−xAs increases the electron concentration without decreasing the electron mobility. High free-electron concentrations of ns=7.5×1012 cm−2 (300 K) and ns=3.7×1012 cm−2 (77 K), and Hall mobilities of μ=5470 cm2 (V s)−1 (300 K) and μ=24 600 cm2 (V s)−1 (77 K) were obtained. The high concentration and mobility product of the channel: nsμ=4.1×1016 (V s)−1 at 300 K and nsμ=9.1×1016 (V s)−1 at 77 K, makes it a preferred choice for high-speed applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355858
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Phonon study of strained InGaAs layers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 400-402 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Relaxation of strain in InxGa1−xAs layers on GaAs is studied by Raman spectroscopy for layers below and above the critical thickness. We show that the enormous strain of the perfect epitaxial layer is released stepwise with the thickness. It is suggested that dislocations formed at the layer surface impose the growth of the next sublayer of partially released strain, preserving the former grown sublayer of higher strain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104647
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    n-type delta doped strained quantum well lasers for improved modulation bandwidth (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1787-1789 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Improved dynamic properties of strained single quantum well (QW) lasers were obtained by the incorporation of an n-type δ doping at close proximity to the strained QW active layer. The resultant modulation bandwidth was almost doubled, from 3.5 GHz to more than 6.2 GHz. The increased modulation bandwidth is attributed to an improved carrier injection resulting from the enhancement of the carrier transit time into the QW, as well as a decrease in the significance of the adverse contribution of carrier transport effects. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118692
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    n-type delta-doped quantum well lasers with extremely low transparency current density (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2043-2045 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that placing an n-type Te δ doping aside a single strained quantum well (QW) is an efficient way to control the initial carrier concentration in the QW and thus to lower transparency current density, Jtr, while preserving low internal losses. This is in contrast with uniform doping of the active area. Jtr of 11.3 A/cm〈thin〉2 and threshold current density of 54.4 A/cm2, which are both the lowest values reported to date for strained InxGa1−xAs/GaAs semiconductor lasers, were obtained. A somewhat higher injection efficiency is obtained when the energy levels are adjusted so that the electrons tunnel from the delta well directly into the QW. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116297
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Quantum well width and In composition effects on the operating characteristics of InGaAs/GaAs strained single quantum well diode lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3219-3221 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work we study the effect of strain on the performance of highly strained InxGa1−xAs/GaAs/GaAlAs quantum well lasers (SQWL). We changed the indium concentration and the QW width and found that the threshold current density, Jth, is minimal with x∼0.4 when the width of the QW is 20 A(ring). For x=0.3 the minimal Jth was obtained with a 90 A(ring) active layer. The best performing laser reported in this work has Jth=68 A/cm2 emitting at 1.063 μm with cavity length of 2022 μm. Comparison with GaAs/GaAlAs lasers is possible because both structures have the same optical mode confinement, and the comparison shows that SQWLs have indeed lower Jth, but the improvement in Jth with the strain is not as dramatic as predicted theoretically.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105737
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...