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  • 1
    Electronic Resource
    Electronic Resource
    Emission Spectrochemical Analysis of Vanadium and Iron in Titanium Tetrachloride (1955)
    s.l. : American Chemical Society
    Analytical chemistry 27 (1955), S. 881-883 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60102a004
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  • 2
    Electronic Resource
    Electronic Resource
    Determination of arsenic diffusion parameters by sulfur indiffusion in gallium arsenide (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7045-7050 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indiffusion profiles of sulfur in gallium arsenide were determined by secondary ion mass spectroscopy. In order to evaluate the shape of the profiles, a set of coupled reaction–diffusion equations was solved numerically. From the simulated nonequilibrium indiffusion profiles of sulfur, which diffuses into gallium arsenide via the kick-out mechanism, both the diffusion coefficient and the equilibrium concentration of arsenic self-interstitials were simultaneously determined. Transmission electron microscopy revealed that, due to an arsenic supersaturation, extrinsic dislocation loops have formed. The Fermi-level effect is more pronounced at lower diffusion temperatures and provides an additional driving force for the loop formation, agreeing well with the occurrence of larger faulted loops at a diffusion temperature of 950 °C rather than at 1100 °C. The complex behavior of the sulfur indiffusion can be quantitatively described by taking into account extended defects. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1325383
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  • 3
    Electronic Resource
    Electronic Resource
    Phosphorus and antimony in GaAs as tracers for self-diffusion on the arsenic sublattice (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 704-710 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For investigating arsenic self-diffusion, phosphorus (P) and antimony (Sb) were used. New P and Sb in-diffusion experiments show the same behavior as P and Sb interdiffusion experiments. This is in contradiction to results from the literature. By means of transmission electron microscopy we observed a phase transformation to polycrystalline GaAs1−xPx at the surface under experimental conditions similar to those described in the literature. This leads to a penetration depth much higher than for the P in-diffusion without this phase transformation. The new diffusion coefficients of the P and Sb in-diffusion above 900 °C are in the same range as the interdiffusion coefficients and self-diffusion coefficients from As-tracer diffusion. From this result we conclude that P and Sb have tracer properties for arsenic self-diffusion in GaAs. Measurements of the diffusion coefficients at different As-vapor pressures revealed that As self-diffusion is dominated by As self-interstitials. Furthermore, we performed annealing experiments on differently doped samples. There is no indication of a Fermi-level effect. Hence, As self-diffusion is governed mainly by neutral defects. Between 900 and 1100 °C, we obtain an Arrhenius expression DAsSD=75 exp(−4.4 eV/kT)cm2/s, which describes As self-diffusion. The P in-diffusion values below 900 °C show a weaker temperature dependence, which indicates a changeover to a different diffusion mechanism. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371929
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  • 4
    Electronic Resource
    Electronic Resource
    Wafer bonding of different III–V compound semiconductors by atomic hydrogen surface cleaning (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3856-3862 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large-area wafer bonding of different III–V compound semiconductors in an ultrahigh vacuum background is demonstrated. The bonding procedure, the microstructure, and the mechanical strength of the bonded GaAs/InP and GaAs/GaP interfaces were studied. The cleaning procedure and the bonding were separated in order to avoid undesired artifacts and thermal stress at the interface. First, thermally generated atomic hydrogen was employed to clean the surfaces. Then, the wafers were brought into contact below 150 °C. At contact, the interface formed spontaneously over the whole wafer area without application of a mechanical load. Transmission electron microscopy showed the formation of atomically direct interfaces and misfit dislocation networks. The fracture surface energy was measured as being comparable to that of respective bulk materials. Heat treatments of the bonded GaAs/InP samples led to relaxation of the interfaces but also to the formation of nanoscopic voids in the interface plane and volume dislocations. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1403684
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  • 5
    Electronic Resource
    Electronic Resource
    Carbon-induced undersaturation of silicon self-interstitials (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 200-202 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon diffusion into silicon is well behaved and does not generate any nonequilibrium point defects. We show that, in contrast, the diffusion of carbon incorporated in silicon well above its solid solubility will cause an undersaturation of silicon self-interstitials, which in turn may cause retarded diffusion of boron. In addition, we predict that due to this undersaturation, the diffusion of built-in carbon spikes will lead to strongly non-Gaussian concentration profiles. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120684
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  • 6
    Electronic Resource
    Electronic Resource
    Experimental and computer simulation studies of diffusion mechanisms on the arsenic sublattice of gallium arsenide (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5295-5301 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interdiffusion experiments with GaAsP/GaAs and GaAsSb/GaAs superlattice samples were performed at various temperatures and arsenic vapor pressures. From the depth-concentration profiles effective diffusion coefficients were calculated. The dependence of these effective diffusion coefficients on the ambient arsenic pressure led to the conclusion that the interdiffusion process is governed by a substitutional-interstitial diffusion mechanism. The good agreement of the effective diffusion coefficients of the GaAsP/GaAs and GaAsSb/GaAs samples with each other and the agreement with arsenic self-diffusion data from the literature is an indication that phosphorus and antimony have good tracer properties to investigate arsenic self diffusion. Comparing our results with sulfur in-diffusion experiments from the literature we conclude that the kick-out mechanism governs self-diffusion on the arsenic sublattice in GaAs. Our results are in contradiction to arsenic self-diffusion experiments which indicated a vacancy mechanism. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367354
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  • 7
    Electronic Resource
    Electronic Resource
    Low thermal power electron beam annealing of scanning tunneling microscope tips (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 3262-3263 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An add-on unit was developed that allows the cleaning of scanning tunneling microscope tips by electron beam annealing even if they cannot be disconnected from the piezo scanner in situ. The whole scanner tip combination, which is attached to a linear motion stage, is subjected to a pulsed annealing treatment. The heat impact is focused on the outermost tip by sticking the tip through a hole in a grounded Mo screening plate with the cathode mounted on the opposite side. Tungsten tips attached to the scanner of the Omicron ultrahigh vacuum Multiscan Lab were annealed to achieve atomic resolution of ultrahigh vacuum cleaved GaAs (110) faces. A highly doped superlattice package grown on semi-insulating GaAs was also able to be investigated on the cleaved (110) face due to the ability of exact tip positioning with a scanning electron microscope. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148279
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  • 8
    Electronic Resource
    Electronic Resource
    Carbonization-induced SiC micropipe formation in crystalline Si (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1453-1455 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defect structure of Si substrates at their β-SiC/Si interfaces generated in a chemical vapor deposition (CVD) process by carbonization with C2H4 has been investigated in detail by transmission electron microscopy (TEM) using differently prepared cross section and planar specimens. A new category of defects of minute size and high area density has been found and identified as SiC micropipes formed by Si outdiffusion and simultaneous ingrowth of SiC. A model of self-adjusting micropipe formation is proposed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114492
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  • 9
    Electronic Resource
    Electronic Resource
    "Compliant" twist-bonded GaAs substrates: The potential role of pinholes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 374-376 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By twist wafer bonding, thin (100) GaAs layers were transferred onto (100) GaAs handling wafers in order to fabricate structures like those suggested in the literature as "compliant universal substrates." Heteroepitaxial InP and InGaAs films were grown on the GaAs twist-bonded layers. Twisted and untwisted grains of the epitaxial film with diameters from 0.1 to several μm without threading dislocations were observed by transmission electron microscopy. Twisted grains grew on the twist-bonded layer, while the untwisted grains grew directly on the GaAs handling wafer and were caused by pinholes in the twist-bonded GaAs layer. It is suggested that the lateral limitation of the epitaxial growth of grains on the thin twisted GaAs layer caused by the presence of pinholes reduces the density of threading dislocations in the strain-relaxed film and might be a mechanism for the observed low density of threading dislocations in lattice-mismatched epitaxial films grown on twist-bonded "compliant universal substrates." © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123075
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  • 10
    Electronic Resource
    Electronic Resource
    The contribution of vacancies to carbon out-diffusion in silicon (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 392-394 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion of carbon is mostly assumed to be governed by carbon interstitials via the kick-out mechanism. Carbon in-diffusion experiments are associated with thermal equilibrium concentrations of point defects, whereas in the case of carbon out-diffusion a remarkable undersaturation of Si self-interstitials may develop provided the carbon concentration is several orders of magnitude over its solubility value. New carbon out-diffusion experiments demonstrate that this model qualitatively describes the observed carbon diffusion profiles. However, we demonstrate that an accurate description of the experimental profiles is only possible if the Frank–Turnbull mechanism, involving vacancies, is additionally taken into account. Detailed investigations of carbon and boron profiles in the same sample can be used to determine the splitting of the known vacancy component of the silicon self-diffusion coefficient into the vacancy diffusion coefficient and the vacancy thermal equilibrium concentration at 900 °C. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123081
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