ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In this work we analyzed the radiation hardness of SiC p+n diodes after very high 1 MeVneutron fluence. The diode structure is based on a p+ emitter ion implanted in n-type epilayer withthickness equal to 5 %m and donor doping ND = 3×1015 cm-3. Before irradiation, the average leakagecurrent density at 100 V reverse bias was of the order of 3 nA/cm2. These devices were irradiated atfour different fluence values, logarithmically distributed in the range 1014-1016 (1 MeV)neutrons/cm2. After irradiation the epilayer material became more resistive, as indicated by thereduction of the forward and reverse current density at a given voltage. In particular, after a neutronfluence of 1×1014 n/cm2 the epilayer active doping concentration decreased to 1.5×1015 cm-3. Afterirradiation at 1016 n/cm2, i.e. the highest fluence value, the average leakage current density at 100 Vreverse bias decreased to values of the order of 0.1 nA/cm2. This very low noise even after very highfluence is very important to obtain a high signal to noise ratio even at room temperature
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.917.pdf
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