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  • 1
    Electronic Resource
    Electronic Resource
    Charge state control of hydrogenation in silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 151-155 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that periodic exposure to zero bias during in situ hydrogenation of reverse-biased p-type Schottky barrier structures has dramatic effects on H penetration. H influx can be slowed or even stopped by such protocols. By contrast, similar pulsing techniques produce almost no changes of penetration in n-type barriers during hydrogenation; this latter observation is in sharp contrast to the expectations that charge conversion from H+ to H− would reverse the drift of H species. We suggest that these effects are caused by the charge conversion of relatively immobile H-related defects. In the p-type barriers this results in a weakening or reversal of the near surface electric field, effectively stopping the drift of H+ into the bulk. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362825
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  • 2
    Electronic Resource
    Electronic Resource
    Mechanisms behind green photoluminescence in ZnO phosphor powders (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7983-7990 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We explore the interrelationships between the green 510 nm emission, the free-carrier concentration, and the paramagnetic oxygen-vacancy density in commercial ZnO phosphors by combining photoluminescence, optical-absorption, and electron-paramagnetic-resonance spectroscopies. We find that the green emission intensity is strongly influenced by free-carrier depletion at the particle surface, particularly for small particles and/or low doping. Our data suggest that the singly ionized oxygen vacancy is responsible for the green emission in ZnO; this emission results from the recombination of a photogenerated hole with the singly ionized charge state of this defect. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362349
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  • 3
    Electronic Resource
    Electronic Resource
    Crosslinked polyimide electro-optic materials (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5876-5883 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report studies of the optical and electro-optic properties of guest–host polymeric nonlinear optical materials based on aromatic, fluorinated, fully imidized, organic soluble, thermally, and photochemically crosslinkable, guest–host polyimides. We have introduced temperature stable nonlinear optical chromophores into these polyimides and studied optical losses, electric field poling, electro-optic properties, and orientational stability. We measured electro-optic coefficients of 5.5 and 12.0 pm/V for ((2,6-Bis(2-(3-(9-(ethyl)carbazolyl))ethenyl)4H-pyran-4-ylidene)propanedinitrile (4-(Dicyanomethylene)-2-methyl-6-(p -dimethylaminostyryl)-4H-pyran) DCM-doped guest–host systems at 800 nm using a poling field of 1.3 MV/cm. Poling induced nonlinearities in single-layer films were in agreement with the oriented gas model, but were lower in three-layer films due to voltage division across the layers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360779
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  • 4
    Electronic Resource
    Electronic Resource
    Loss mechanisms in polyimide waveguides (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2505-2508 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Waveguide losses in thin film polyimides using waveguide loss spectroscopy and photothermal deflection spectroscopy as a function of cure cycle and structure were studied. Fluorinated sidegroups on the polyimide backbone lead to decreases in birefringence and absorption. The primary waveguide loss mechanism is absorption, not scattering. Waveguide losses as low as 0.4 dB/cm at 800 nm have been measured. Losses as low as 0.3 dB/cm at 1300 nm can be inferred from the photothermal deflection spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357610
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  • 5
    Electronic Resource
    Electronic Resource
    Binding of cobalt and iron to cavities in silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3717-3726 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemisorption binding of Co and Fe to cavity walls in Si was quantitatively characterized in the temperature range 973–1273 K in order to evaluate the efficacy of cavities for impurity gettering. The cavities were formed by He ion implantation and annealing. Then, with the solution concentration of Co or Fe being held at the solid solubility through prior formation of excess metal-silicide phase, the equilibrium number of metal atoms bound to the cavities was measured. Using this information in conjunction with published solubilities, a binding free energy relative to interstitial solution was extracted. The binding free energies for cavity-wall chemisorption of Co and Fe were found to be less than those for precipitation of the respective silicide phases, a reversal of the ordering previously observed by us for Cu and Au. Nevertheless, model calculations indicate that the chemisorption mechanism is important together with silicide precipitation for cavity gettering of all four elements. The results of this work, taken with the known thermal stability and the anticipated device-side compatibility of cavities, suggest that these sinks will prove attractive for gettering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363322
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  • 6
    Electronic Resource
    Electronic Resource
    Electron-beam-induced charging of phosphors for low voltage display applications (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7994-8001 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shifts of the surface potential were measured for several commercial phosphors by monitoring secondary and Auger electron spectra during electron beam irradiation at energies between 0.5 and 5 keV. The insulating phosphors charge strongly negative above 2 keV, whereas the conductive ones do not. This charging behavior is exaggerated after prolonged beam exposure. Measurements using two coincident electron beams to control the surface potential demonstrate that aging-enhanced surface charging decreases the phosphor cathodoluminescence. The dependence of the phosphor surface potential on the voltage applied to the metal plate on which they are deposited was also determined. These data suggest the presence of substantial space charge in the phosphors, even at low electron beam energies where no beam-induced shifts of the surface potentials are seen. We suggest that the electric fields due to these near-surface space charge regions are crucial in altering secondary emission and in establishing a steady state charge balance in the case where no currents can flow from the irradiated phosphor surface to the conductive backplane. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365403
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  • 7
    Electronic Resource
    Electronic Resource
    Local Ce environments and their effects on optical properties of SrS phosphors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 7036-7040 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, we use electron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopies to determine the various Ce environments in SrS phosphor materials and how these affect absorption and emission properties. As the Ce concentration is increased from 450 to 7500 ppm, the total EPR-active Ce3+ and optical absorption signals increase linearly with Ce concentration; by contrast, the PL intensity saturates at fairly low Ce concentrations (1000 ppm Ce). We suggest that the nonlinear behavior of the PL arises from the presence of nonradiative deexcitation pathways such as defects associated with Ce sites, or Ce–Ce pairs. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363776
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  • 8
    Electronic Resource
    Electronic Resource
    Ultraviolet light induced annihilation of silicon dangling bonds in hydrogenated amorphous silicon nitride films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5730-5735 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report results of electron paramagnetic resonance, photothermal deflection spectroscopy, and capacitance-voltage measurements on amorphous hydrogenated silicon nitride (a-SiNx:H) thin films exposed to ultraviolet (UV) illumination. It has been previously shown that exposure to UV light activates silicon dangling-bond defects, i.e., K0 centers, in a-SiNx:H thin films. Here, we demonstrate that the initially UV-activated K0 center can be irreversibly annihilated at long illumination times. Because this effect seems to scale with H content of the measured films, we propose that hydrogen may be passivating the K0 defects during the extended UV exposure. We also show that films subjected to long UV exposures trap charge as efficiently as those having much larger K0 concentrations. A few possibilities to explain this effect are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359593
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  • 9
    Electronic Resource
    Electronic Resource
    Dangling bonds and the Urbach tail in silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2704-2708 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron spin resonance (ESR) and highly sensitive optical-absorption measurements have been performed on plastically deformed silicon, polycrystalline silicon, and high interface state density, oxidized silicon samples. In the first two cases, the response of the Urbach-like subgap optical absorption and the "dangling bond'' ESR signal following thermal and atomic hydrogen anneals is found to be distinctly different from that reported previously for polycrystalline silicon. These data suggest that transitions of the dangling bond are not responsible for this Urbach-like behavior. In addition, we find that removal of the interfacial silicon dangling bond by oxide stripping results in no measurable sample absorptance decreases, implying a considerably lower optical cross section than has been previously estimated for dangling bonds in the bulk.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335907
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  • 10
    Electronic Resource
    Electronic Resource
    Lattice location of hydrogen in Mg doped GaN (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 108-117 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used ion channeling to examine the lattice configuration of hydrogen in Mg doped wurtzite GaN grown by metal organic chemical vapor deposition. Hydrogen is introduced by exposure to hydrogen gas or electron cyclotron resonance plasmas and by ion implantation. A density functional approach including lattice relaxation was used to calculate total energies for various locations and charge states of hydrogen in the wurtzite Mg doped GaN lattice. Results of channeling measurements are compared with channeling simulations for hydrogen at lattice locations predicted by the density functional theory. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1377609
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