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  • 1
    Electronic Resource
    Electronic Resource
    Melting kinetics of Sb under nanosecond UV laser irradiation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3099-3101 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Real time reflectivity measurements at the HeNe laser wavelength (λ=632.8 nm) have been performed in crystalline Sb under pulsed UV laser irradiation (λ=193 nm). For energy densities above 100 mJ cm−2, a transient low-reflectivity phase is observed, which is related to surface melting. The change of reflectivity of the solid material upon heating is small, and a maximum variation of −0.02 relative to the room-temperature value (RSb,rt) is determined for the solid material at the melting point. The value of the reflectivity of the liquid material is determined to be 0.94RSb,rt(632.8 nm)=0.67, which is lower than that of the solid and it is associated with a decrease of the absorption coefficient upon phase change. The analysis of reflectivity transients at energy densities just above the melting threshold suggests that melting nucleation proceeds inhomogeneously.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352996
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  • 2
    Electronic Resource
    Electronic Resource
    Quantitative optical determination of the shape of Cu nanocrystals in a composite film (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5734-5738 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that optical extinction spectroscopy can be used to determine the effective shape of Cu nanocrystals (NCs) embedded in a transparent amorphous Al2O3 host both produced by pulsed laser deposition. The axial ratio of the NCs was extracted from the positions of the surface plasmon modes of the optical extinction spectra of the nanocomposite film. Comparison to the results obtained by grazing incidence small angle x-ray scattering shows excellent agreement. Thus, optical spectroscopy can be used as a simple, easily accessible, and versatile tool for the characterization of the NCs that form nanocomposite films. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1362403
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence performance of pulsed-laser deposited Al2O3 thin films with large erbium concentrations (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5120-5125 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Erbium doped Al2O3 films with concentrations up to 6×1020 Er cm−3 have been prepared in a single step process by pulsed-laser deposition. Alternate ablation of Al2O3 and Er targets has been used to control the in-depth distribution and in-plane concentration of Er3+ ions independently. The characteristic Er3+ photoluminescence response at 1.53 μm has been studied as a function of the Er3+ distribution. It is found that lifetime values can be greatly increased by increasing the Er3+–Er3+ in-depth separation above 3 nm. This result can be related to a reduced Er3+–Er3+ energy migration process. The in-plane Er3+ concentration was increased by either increasing the number of pulses on the Er target or the laser energy density for ablation. By the latter method in-plane concentrations as high as 1.1×1014 Er cm−2 per layer (corresponding to 2×1020 Er cm−3) were achieved, while keeping lifetime values as high as 6 ms. This result is explained in terms of shallow Er3+ implantation during deposition. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1409575
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  • 4
    Electronic Resource
    Electronic Resource
    Erbium in crystal silicon: Optical activation, excitation, and concentration limits (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1256-1262 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical activation, excitation, and concentration limits of erbium in crystal Si are studied. Preamorphized surface layers of Czochralski-grown (Cz) Si(100), containing 1.7×1018 O/cm3, were implanted with 250 keV Er at fluences in the range 8×1011–8×1014 cm−2. After thermal solid-phase epitaxy of the Er-doped amorphous layers at 600 °C, Er is trapped in the crystal at concentrations ranging from 3×1016 to 7×1019 Er/cm3, as measured by secondary-ion-mass spectrometry. Photoluminescence spectra taken at 77 K show the characteristic Er3+ intra-4f luminescence at 1.54 μm. Photoluminescence excitation spectroscopy shows that Er is excited through a photocarrier-mediated process. Rapid thermal annealing at 1000 °C for 15 s increases the luminescence intensity, mainly due to an increase in minority-carrier lifetime, which enhances the excitation efficiency. Luminescent Er forms clusters with oxygen: the maximum Er concentration that can be optically activated is determined by the O content, and is (3±1)×1017 Er/cm3 in Cz-Si. The internal quantum efficiency for electrical excitation of Er in Cz-Si is larger than 3×10−6. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358927
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  • 5
    Electronic Resource
    Electronic Resource
    Incorporation and optical activation of erbium in silicon using molecular beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2658-2662 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Erbium is incorporated in crystalline silicon during molecular beam epitaxy on Si(100) at 600 °C, either in vacuum (6×10−11 mbar) or in an O2 ambient (4×10−10 mbar). Strong Er segregation takes place during growth in vacuum, and only 23% of the total deposited Er is incorporated in the epitaxial layer. Films grown in an O2 ambient show no Er segregation, and an Er concentration of 1.5×1019 Er/cm3 is incorporated in the crystal. The O content is 4×1019 O/cm3. Photoluminescence spectra taken at 10 K show the characteristic intra-4f luminescence of Er3+ at 1.54 μm for both samples, grown with and without O2. Differences found in the spectral shape indicate a difference in the local environment (presumably O coordination) of Er for the two cases. The O codoped film shows a 7 times higher Er luminescence peak intensity than the film grown without O. This is due to the higher incorporated Er concentration as well as an increased luminescence efficiency (lifetime without O: 0.33 ms, with O: 1.81 ms). The Er excitation efficiency is lower in the O codoped film than in the O-undoped film, which is attributed to the lower minority carrier lifetime in the O-doped material. Thermal annealing of the O codoped film at 1000 °C increases the excitation efficiency and hence the Er luminescence intensity. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361136
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  • 6
    Electronic Resource
    Electronic Resource
    Relaxation and crystallization kinetics of amorphous germanium films by nanosecond laser pulses (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7287-7291 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Relaxation and crystallization of amorphous germanium films on silicon are induced by nanosecond laser pulses. Real time reflectivity measurements and Raman spectroscopy show that amorphous regrowth occurs upon melting and rapid solidification of the film because the thermal conductivity of the silicon substrate is high enough to extract the laser energy absorbed by the film in a very efficient way. The amorphous regrown film is in a relaxed state when compared to the as-grown amorphous material. Further pulses induce fast crystallization of the film. An increase of the melting threshold is found upon relaxation and crystallization of the film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356663
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  • 7
    Electronic Resource
    Electronic Resource
    1.5 μm room-temperature luminescence from Er-implanted oxygen-doped silicon epitaxial films grown by molecular beam epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2644-2647 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxygen-doped Si epitaxial films (OXSEF) grown by molecular beam epitaxy and subsequently implanted with Er show room-temperature luminescence around λ=1.54 μm. The 45-nm-thick films have an oxygen concentration of 10 at. % and were implanted with 7.8×1014 25 keV Er ions/cm2. The luminescence was optically excited with the 514 nm line of an Ar ion laser and is attributed to intra-4f transitions in Er3+. Thermal annealing at 700–800 °C is necessary to optimize the luminescence after implantation. Pure Si implanted and annealed under the same conditions does not show Er-related luminescence at room temperature. The emission from Er in OXSEF is attributed to the high concentration of oxygen in the films, which forms complexes with Er. The excitation of Er3+ is due to a photocarrier mediated mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356241
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  • 8
    Electronic Resource
    Electronic Resource
    Nanocrystal size dependence of the third-order nonlinear optical response of Cu:Al2O3 thin films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2791-2793 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal nanocomposite thin films formed by Cu nanocrystals embedded in an amorphous Al2O3 host have been synthesized by pulsed laser deposition. The mean nanocrystal diameter d was varied in the range 3.0±0.6 to 6±1 nm. The linear and nonlinear optical properties of the films were studied in the vicinity of the surface plasmon resonance and the size dependence of the third-order nonlinear optical susceptibility of the metal nanocrystals has been determined. The observed dependence (1/d3) indicates that in the studied diameter interval, the nonlinear response is due to quantum confinement effects in which the major contribution is associated with electronic intraband transitions. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124015
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  • 9
    Electronic Resource
    Electronic Resource
    All laser-assisted heteroepitaxial growth of Si0.8Ge0.2 on Si(100): Pulsed laser deposition and laser induced melting solidification (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1781-1783 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of heteroepitaxial Si0.8Ge0.2 films on Si(100) by a novel all laser-assisted technique using only ArF excimer laser radiation is demonstrated. Amorphous 30 nm thick films are grown by pulsed laser deposition from alternating pure Si and Ge targets on clean Si substrates. Melting and rapid solidification is then induced by pulsed irradiation (0.54 J/cm2), promoting epitaxial growth. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116665
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  • 10
    Electronic Resource
    Electronic Resource
    Optically active Er–Yb doped glass films prepared by pulsed laser deposition (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2352-2354 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Active rare-earth Er3+–Yb3+ co-doped phosphate glass films are produced in a single step by pulsed laser deposition. The films are multimode waveguides and exhibit the highest refractive index, optical density and 1.54 μm photoluminescence intensity and lifetime when deposited at low oxygen pressure (Pox≤4×10−5 Torr). The density of the films obtained under these conditions is higher than that of the target material as a consequence of the high kinetic energy of the species generated during ablation. Luminescent emission can be excited by optical pumping the Er3+ ions either directly or through cross-relaxation of the Yb3+. Post-deposition annealing allows us to improve the luminescence performance. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368304
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