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  • 1
    Electronic Resource
    Electronic Resource
    Predicted elastic constants and critical layer thicknesses for cubic phase AlN, GaN, and InN on β-SiC (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8423-8425 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Elastic constants for zinc-blende AlN, GaN, and InN have been estimated from the elastic constants of the wurtzite phase. This has been accomplished by recognizing that the crystal structures of the wurtzite and zinc-blende phases are related by a simple rotation. This rotation was then applied to the elastic constants and a least-squares fit is used to match the results. Using the zinc-blende elastic constants the critical thickness of the nitrides on β-SiC substrates was calculated. The critical thickness of a single overlayer of AlN was calculated to be 14.1 nm, and for GaN the critical thickness was found to be 0.7 nm. In the elastic continuum model used there was no solution for the critical thickness of InN.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347412
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  • 2
    Electronic Resource
    Electronic Resource
    The role of surface tension in the growth of strained quantum wire arraysa) (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 717-721 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The critical radius of a strained quantum wire and the potential strain stabilization of quantum wire arrays has been investigated for the InxGa1−xAs/GaAs system. The critical radius of the quantum wire was calculated using an energy balance approach. The wire was found to be more stable than the corresponding two-dimensional quantum well structure. The use of surface tension as a stabilization force during the growth of strained quantum wire arrays is expected to have beneficial effects for arrays with greater than 7% InAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347355
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  • 3
    Electronic Resource
    Electronic Resource
    n-type ion implantation doping of AlxGa1−xAs (0≤x≤0.7) (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2132-2137 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si-implant activation characteristics in AlxGa1−xAs for Al compositions of 0%–70% AlAs are presented for doses of 5.6×1012 and 2.8×1013 cm−2 at 100 keV. For both doses, the effective activation efficiency (ηeff) is relatively constant from 0% to 20% AlAs (ηeff=64% for 5.6×1012 cm−2 and 37% for 2.8×1013 cm−2 for 20% AlAs), goes through a minimum at 35% AlAs (ηeff=6.6% for 5.6×1012 cm−2 and 2.5% for 2.8×1013 cm−2), and then increases towards 70% AlAs (ηeff=52.8% for 5.6×1012 cm−2 and 31.1% for 2.8×1013 cm−2). The results are explained based on the compositional dependence of the ionization energy and conduction band density-of-states of AlGaAs. The effects of P coimplantation is also studied but demonstrates no significant enhancement of the activation efficiency of Si implantation for 0%–70% AlAs. Finally, data are presented for Se implantation in Al0.2Ga0.8As with a maximum effective activation efficiency of 5.6% achieved. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363556
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  • 4
    Electronic Resource
    Electronic Resource
    Parallel quantum point contacts fabricated with independently biased gates and a submicrometer airbridge post (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2326-2328 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using an integrated airbridge and submicrometer gate post technology, coupled quantum point contacts (QPCs) arranged in a parallel configuration were fabricated. The airbridge and gate post are fabricated by e-beam lithography and Ti/Au evaporation in a single step. Gate post diameters as small as 0.1 μm have been achieved. The two QPCs are fabricated with two conventional gates and a central airbridged gate, each of which can be biased independently. Conductance measurements clearly exhibit coupling of the two QPCs, as the quantized conductance steps are in units of 4 e2/h. Independent measurements of each QPC show conductance steps in units of 2 e2/h.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112731
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  • 5
    Electronic Resource
    Electronic Resource
    InGaAs/InP hot electron transistors grown by chemical beam epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 189-191 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report on the dc performance of chemical beam epitaxy grown InGaAs/InP hot electron transistors (HETs). The highest observed differential β (dIC/dIB) is over 100. The HETs have Pd/Ge/Ti/Al shallow ohmic base contacts with diffusion lengths less than 300 A(ring). Furthermore, we also demonstrated ballistic transport of electrons in an InGaAs/InP HET by obtaining an energy distribution of electrons with ∼60 meV full width at half maximum. The measured conduction band discontinuity of InGaAs/InP is 250.3 meV, which is 39.8% of the band gap difference.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108214
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  • 6
    Electronic Resource
    Electronic Resource
    High quality single and double two-dimensional electron gases grown by metalorganic vapor phase epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1911-1913 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the metalorganic vapor phase epitaxy (MOVPE) growth of AlGaAs/GaAs two-dimensional electron gases (2DEGs) with mobilities as high as 786 000 cm2/V s at a carrier density of 3.0×1011 cm−2 at 0.3 K. The mobility figures of merit (μ/n3/2) for these 2DEGs are the highest reported to date for MOVPE materials. These 2DEGs also exhibit the fractional quantum Hall effect (FQHE) with minima in longitudinal resistance corresponding to Landau level filling factors 2/3, 4/3, and 5/3. The temperature dependence and carrier density dependence of mobility were characterized, and the mobility was found to vary linearly with carrier density, implying that the mobility is probably limited by background ionized impurity scattering. A delta-doped 2DEG was also compared with uniformly doped 2DEGs and was found to have a slightly higher mobility. Finally, we obtained high mobility in a coupled double 2DEG structure for 2D to 2D tunneling applications. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114374
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  • 7
    Electronic Resource
    Electronic Resource
    2×106 cm2/V s electron mobility by metalorganic chemical vapor deposition with tertiarybutylarsine (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 208-210 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the metalorganic chemical vapor deposition (MOCVD) growth of two-dimensional electron gases (2DEGs) with electron mobilities up to 2.0×106 cm2/V s at 0.3 K. These are the highest mobilities to date for MOCVD materials, and were achieved using a safer replacement precursor for arsine, tertiarybutylarsine (TBA). For structures grown using arsine, we obtained a maximum mobility of 1.0×106 cm2/V s, which although comparable to the best by MOCVD to date, is half that obtained using TBA. Our studies on thick GaAs and AlGaAs layers indicate that the use of TBA in place of arsine reduces both the carbon and donor impurity concentrations. Thus, TBA is not only a safe alternative to arsine, but also produces significantly purer films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116462
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  • 8
    Electronic Resource
    Electronic Resource
    A parametric investigation of AlGaAs/GaAs modulation-doped quantum wires (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5444-5455 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Poisson's and Schrödinger's equations have been simultaneously solved in cylindrical coordinates for the problem of a cylindrical modulation-doped quantum well, also referred to as a quantum wire. A transfer matrix method for the solution of Schrödinger's equation has been implemented for cylindrical coordinates. For the case of a GaAs wire embedded in an AlGaAs host, a parametric investigation was undertaken to determine the effects of aluminum fraction, temperature, well radius, barrier doping, and spacer layer thickness upon the linear electron density within the quantum wire. Transferred electron densities in excess of 106 electrons per cm are easily achievable for a wide range of parameters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343694
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