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  • 1
    Electronic Resource
    Electronic Resource
    Nonlinear spectroscopy near half-gap in bulk and quantum well GaAs/AlGaAs waveguides (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1927-1935 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the nonlinear properties of bulk AlGaAs and GaAs/AlGaAs multiple quantum wells (MQW) below the half-band-gap energy using subpicosecond pulses between 1.65 and 1.7 μm. In the bulk material we find a value for the nonlinear index n2 = +3.6× 10−14 cm2/W and a two-photon absorption coefficient β = 0.26 × 10−4 cm/MW. In the MQW we measure an n2 up to 2.4 times larger, and we attribute this enhancement to a stronger 1S-exciton intermediate state. The β value is up to 25 times larger in the MQW. This larger value may result from midgap states that resonantly enhance the virtual intermediate state in two-photon absorption and act as a real transition in a two-step absorption process. The resulting figure of merit (2n2/βλ) for the bulk (MQW) material is 17 (1.6), which means that these semiconductors below half band gap are appropriate for all-optical switching and quantum optics applications. We confirm that n2 is instantaneous on the 300 fs time scale of our pulses from self-phase-modulation spectra as well as time-resolved pump-probe measurements. However, we find an intriguing exchange of energy between the two orthogonal axes as evidenced by the signal along the probe axis following the negative derivative of the pump intensity. This result may be explained by self-phase modulation of the pump combined with a low-frequency Raman process that couples the modes along orthogonal axes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351182
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Bulk semiconductor saturable absorber for a NaCl color center laser (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2177-2179 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using bulk InGaAsP as a saturable absorber we have passively mode locked a NaCl color center laser to produce transform-limited, pedestal-free pulses near 1.6 μm as short as 197 fs with up to 4.2 kW peak power. Our results simplify the saturable absorber material requirements and prove that excitons are not required for generating subpicosecond pulses. By comparing a dozen samples we find that a minimum band-edge absorbance of 40% is required to generate subpicosecond pulses, although details of the band edge are not critical. In addition, we find stable mode locking always occurs on the long-wavelength side of the laser gain peak.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102960
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Actively mode-locked GaInAsP laser with subpicosecond output (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 348-350 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We actively mode lock a high-frequency GaInAsP laser at a rate of 16 GHz to obtain nearly transform-limited hyperbolic secant pulses with a pulse width of 0.58 ps. This is the shortest pulse width yet demonstrated for either passively or actively mode-locked semiconductor lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99460
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  • 4
    Electronic Resource
    Electronic Resource
    Integrable optical correlator: Its temporal resolution, spectral response, and power sensitivity (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1725-1727 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new class of optical correlator which is integrable and potentially compatible with semiconductor lasers is experimentally tested. The correlator proposed earlier (a special GaAs/AlGaAs waveguide) is shown to be broad band capable of correlating pulse trains with average power in the correlator in sub-mW range with wavelengths at least ranging from 1.06 to 1.7 μm. To show compatibility with semiconductor laser diodes the correlator device was also used to generate sum frequency signal from mixing a 400 μW cw beam of a 1.06 μm Nd:YAG laser with a 400 μW cw beam of a 1.3 μm semiconductor laser diode. The latest result shows the potential of direct measurement of optical pulses from semiconductor laser diodes at different wavelengths with a single integrable compact correlator without any mechanical translation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101374
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  • 5
    Electronic Resource
    Electronic Resource
    Passively mode locked femtosecond color center lasers in the erbium gain band (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 886-888 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using semiconductor saturable absorbers, we passively mode lock two color center lasers (CCL) to generate femtosecond pulses at wavelengths within the gain band of erbium-doped fiber amplifiers. For the first time to our knowledge, we passively mode lock a KCl, FA(Tl) CCL in a single cavity to generate near transform limited Gaussian pulses as short as 315 fs with pulse energies up to 600 pJ. We also extend the tuning range for a NaCl, (F 2+)H CCL to include the 1.5–1.6 μm wavelength range and generate pulses as short as 280 fs by addition of a low-loss intracavity prism filter and proper crystal preparation. The performance of the two lasers are compared as a function of wavelength.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107778
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Large nonlinear phase shifts in low-loss AlxGa1−xAs waveguides near half-gap (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2558-2560 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the instantaneous nonlinear index change in Al0.2Ga0.8As waveguides below the two-photon absorption edge and find π phase shifts with 80 pJ, 0.4 ps pulses at wavelengths near 1.6 μm. These large phase shifts are obtained with less than 1 dB of loss from multiphoton absorption. Our results indicate that AlGaAs waveguides, which have a mature fabrication technology, can be used as compact nonlinear elements in switching and quantum optics applications in the near-infrared. Further optimization of the waveguide geometry should result in useful nonlinear phase shifts and low losses for pulse energies approaching a picojoule.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105952
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Ultrafast digital soliton logic gates (1992)
    Springer
    Optical and quantum electronics 24 (1992), S. S1215 
    Details
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract We demonstrate all-optical fibre switches, including soliton-dragging logic gates, soliton-interaction gates and soliton-trapping AND-gates, that have the potential of operating up to speeds of 0.2 Tbps. Solitons in fibres are attractive for ultrafast timedomain switching because they avoid pulse distortion during propagation and because they exhibit particle-like properties. Soliton-dragging logic gates satisfy all requirements for a digital optical processor and having switching energies approaching 1 pJ. In addition, soliton-dragging logic gates are one example of a more general timedomain chirp switch architecture in which a dispersive delay line acts as a ‘lever-arm’ to reduce the switching energy. Soliton-interaction gates are based on elastic collisions between solitons and illustrate that solitons can be used to implement conservative, billiard-ball logic operations. Soliton-trapping AND-gates are sensitive to the timing of the input pulses and display on/off contrast ratios greater than 20∶1. The soliton-trapping AND-gate can serve as the final stage in an all-optical system and as the interface to electronics. These ultrafast gates may prove advantageous in applications where the switch bandwidth limits the performance of the system
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00624671
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    Paper (German National Licenses)
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