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  • 1
    Electronic Resource
    Electronic Resource
    The spectrum of microdisk lasers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 644-653 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for quantitative analysis of microdisk laser emission spectra is presented. Conformal mapping is used to determine radial and azimuthal eigenvalues, eigenvectors, and cavity Q corresponding to leaky optical resonances in an optically transparent dielectric disk. The effects of gain and loss in a microcavity active medium are also included in the model. Our results compare well with experimental data obtained from an InGaAs/InGaAsP quantum well microdisk laser of radius R=0.8 μm. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362873
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  • 2
    Electronic Resource
    Electronic Resource
    Nonlinear spectroscopy near half-gap in bulk and quantum well GaAs/AlGaAs waveguides (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1927-1935 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the nonlinear properties of bulk AlGaAs and GaAs/AlGaAs multiple quantum wells (MQW) below the half-band-gap energy using subpicosecond pulses between 1.65 and 1.7 μm. In the bulk material we find a value for the nonlinear index n2 = +3.6× 10−14 cm2/W and a two-photon absorption coefficient β = 0.26 × 10−4 cm/MW. In the MQW we measure an n2 up to 2.4 times larger, and we attribute this enhancement to a stronger 1S-exciton intermediate state. The β value is up to 25 times larger in the MQW. This larger value may result from midgap states that resonantly enhance the virtual intermediate state in two-photon absorption and act as a real transition in a two-step absorption process. The resulting figure of merit (2n2/βλ) for the bulk (MQW) material is 17 (1.6), which means that these semiconductors below half band gap are appropriate for all-optical switching and quantum optics applications. We confirm that n2 is instantaneous on the 300 fs time scale of our pulses from self-phase-modulation spectra as well as time-resolved pump-probe measurements. However, we find an intriguing exchange of energy between the two orthogonal axes as evidenced by the signal along the probe axis following the negative derivative of the pump intensity. This result may be explained by self-phase modulation of the pump combined with a low-frequency Raman process that couples the modes along orthogonal axes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351182
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  • 3
    Electronic Resource
    Electronic Resource
    Asymmetric line broadening in intracavity loss modulated quantum well distributed feedback lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 669-671 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report for the first time high-speed (Gbit s−1), single mode, digital (on-off) modulation of intracavity loss modulated 1.55 μm InGaAs/InP multiple quantum well distributed feedback lasers. The lasing spectrum, observed to be asymmetrically broadened under high-speed modulation, is shown to result from large carrier density variations which accompany this switching scheme. We also show, for the first time, digitally current-modulated lasers have broader linewidths than devices which use intracavity loss modulation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104563
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  • 4
    Electronic Resource
    Electronic Resource
    Low-threshold GaAs/AlGaAs quantum-well lasers grown by organometallic vapor-phase epitaxy using trimethylamine alane (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 432-435 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have utilized a new aluminum source, trimethylamine alane (TMAA), in the growth of graded-index separate-confinement heterostructure single quantum-well GaAs/AlGaAs laser structures by low pressure (30 Torr) organometallic vapor-phase epitaxy. We find lower carbon and oxygen incorporation in AlGaAs epilayers using TMAA since it does not contain a direct Al–C bond and it is not susceptible to the formation of volatile Al–O containing compounds. The oxygen and carbon concentrations were below the detection limits (〈 5 × 1016 cm−3 and 〈 3 × 1016 cm−3, respectively) of the secondary ion mass spectrometry measurements. Broad-area lasers with 10-nm quantum wells and Al0.45Ga0.55As cladding layers exhibited threshold current densities of 140 A cm−2 for cavity lengths of 1 mm, internal quantum efficiencies of 81%, and intrinsic losses of 1.6 cm−1. These results demonstrate that extremely high-quality AlGaAs and GaAs quantum wells can be grown with TMAA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350294
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  • 5
    Electronic Resource
    Electronic Resource
    Dynamic and static response of multielectrode lasers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 968-970 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We compare the measured and calculated light output of a semiconductor laser modulated by a saturable intracavity absorber. An accurate description of the dynamic and static behavior requires inclusion of both a carrier concentration dependent recombination rate and a voltage-dependent saturable absorption.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103528
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  • 6
    Electronic Resource
    Electronic Resource
    Dynamic optoelectronic read/write memory (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1501-1503 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used multielectrode laser diodes to demonstrate a dynamic digital optoelectronic memory with read and write capability. Pulses 5 ns wide are recirculated in the system every 50 ns. Bits may be modified by applying positive or negative voltage control pulses to an intracavity absorber in the device.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103159
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  • 7
    Electronic Resource
    Electronic Resource
    Multielectrode quantum well laser for digital switching (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1095-1097 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A multielectrode laser can be used to perform digital logic functions and threshold detection. In addition, the intrinsic gain in these devices allows control of lasing light output without using conventional high-current electrical switches. Device potential is illustrated by demonstrating logical and operation (demultiplexing) at 1.5 Gbit s−1 with a bit error rate of 〈10−11 s−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102578
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  • 8
    Electronic Resource
    Electronic Resource
    Bias-controlled intersubband wavelength switching in a GaAs/AlGaAs quantum well laser (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1382-1384 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The light emission characteristic of a GaAs/AlGaAs single quantum well laser with an intracavity monolithic loss modulator has been investigated. Discrete, widely separated, wavelength switching from the first (875 nm) to the second (842 nm) subband is achieved by changing the applied modulator bias. In addition, we show that 2 mW of lasing light power may be modulated with a change in current of 250 μA and a voltage change of 1 V.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101601
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  • 9
    Electronic Resource
    Electronic Resource
    High-field transport in GaAs transistors (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 813-815 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant tunneling is used to explore the dynamics of electron transport in the electric field of reverse-biased GaAs n-p-n heterojunction bipolar transistor collectors. Extreme velocity overshoot is observed in a fraction of a percent of electrons which are accelerated ballistically in the Γ valley to energies greater than 1.5 eV. In addition, we show that Γ–X valley transfer is the dominant scattering mechanism for high-energy Γ valley electrons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100855
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  • 10
    Electronic Resource
    Electronic Resource
    AlAs/GaAs tunnel emitter bipolar transistor (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2250-2252 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first microwave AlAs/GaAs tunnel emitter bipolar transistor utilizing nonequilibrium electron transport in the base. At an emitter current density of 1×105 A cm−2, current gain of greater than unity is measured up to a frequency of 40 GHz. dc current gains of 82 and 53 are measured for devices with emitter stripe widths of 9 and 1.5 μm, respectively. Enhanced device scaling is made possible with the extremely high velocity in the thin base region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101139
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