ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract A detailed study of the etching behaviour of junctions between gallium arsenide epitaxial layers and substrates of different carrier concentrations and carrier types has been made. Optical and scanning electron microscope examination of {1 1 0} cleavage faces of (001) surface specimens has shown that high index facets are produced by the etchant used to delineate the junction. The facets are anisotropic on orthogonal {1 1 0} faces: for example on a (1 1 0) face of ann + layer-n substrate configuration the facet extends from the junction into the substrate, whereas on the orthogonal (110) face the facet extends from the junction into the epitaxial layer. The widths of the facets (in 〈001〉 directions) increase linearly with etching time. A simple model is presented which is able to account qualitatively for all the observed characteristics of the junction etching behaviour, and is based on the occurrence of differential etch rates at the epitaxial layer, junction, and substrate regions. A key assumption of the model is that the junction region is anisotropic in [1 1 0] and [¯1 1 0] directions, and reasons for this anisotropy are considered.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00570391
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