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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7701-7707 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to investigate the interface between polycrystalline-silicon (poly-Si) and crystalline silicon (c-Si), which is of crucial importance for the passivation of high-voltage devices, an infrared diagnostic method has been developed which is based on a modified attenuated total reflection configuration. This interface is shown to consist of silicon oxides (mainly SiO2) in the monolayer range with a thickness of 7±2 A(ring). The interpretation of the experimental results is based on a direct comparison of the infrared reflectivity spectrum of the interface to be studied with that of a reference sample containing a 100-A(ring) thick SiO2 interface layer, as well as on extensive computer calculations. Such calculations have been performed for a three-layer system as well as for a simplified system consisting of a single absorbing layer sandwiched between two transparent half-spaces. The latter system can be solved analytically and provides detailed insight into the physics of the interaction of light with the vibrational excitations of the interface layer. The existence and properties of such a silicon oxide interface layer are compatible with our secondary ion mass spectrometry experiments (oxygen segregation at the interface) and its thickness is in excellent agreement with the thickness of the amorphous interface layer observed by transmission electron microscopy.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7677-7689 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Semi-insulating polycrystalline silicon (SIPOS) are thin SiOx films (0≤x≤2), deposited by means of low pressure chemical vapor deposition on suitable substrates (silicon or sapphire). Although SIPOS has important applications in the semiconductor and solar cell technology, its physical properties which depend strongly on the oxygen content x, are not well known. In the present contribution, SIPOS as deposited at 660 °C in the range 0≤x≤1 is investigated by using different and complementary methods, namely nuclear reaction analysis, secondary ion mass spectrometry, X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and electrical conductivity measurements. On the basis of these experiments it is found that SIPOS consists of a nanometer-scale mixture containing Si, SiO2, and at least one suboxide (SiO1−Δ with Δ≈0.14). SIPOS with x≤0.034 is polycrystalline, while SIPOS with x≥0.4 is completely amorphous. In the range 0.034≤x≤0.4 there is a transition from crystalline Si grains to amorphous Si grains which is accompanied with a drastic decrease in grain size. The microstructure of SIPOS is consistent with a shell model, in which the Si grains are embedded in an amorphous oxide matrix consisting of SiO2 and SiO1−Δ. The latter oxide is located at the grain boundaries of the Si grains, i.e., it forms the transition oxide between the Si grains and the SiO2 matrix. Within the shell model, conduction proceeds by tunneling of thermally activated carriers through the oxide barriers separating adjacent grains. The model is able to qualitatively reproduce the observed low-bias conductivity σ(x,T) in the high-temperature regime.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7690-7700 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of semi-insulating polycrystalline silicon (SIPOS), i.e., SiOx with 0≤x≤2 are studied in the spectral range from the infrared to the UV region. The refractive index n(x,E) and the absorption coefficient α(x,E) are evaluated as a function of the oxygen content x and the photon energy E. The actual shape of the n(x) and α(x) curves are determined by two counteracting effects: (1) the increase of n(x) and α(x) caused by the transition from c-Si to a-Si of the Si grains in SIPOS in the range 0.02≤x≤0.2, and (2) the decrease of n(x) and α(x) due to the increasing insulating character of SIPOS with increasing x. The infrared vibrational modes of bulk SIPOS are described on the basis of an oscillator model with effective parameters. Both, the vibrational frequencies ν˜1(x) of the asymmetrical stretching motion and the total oscillator strength S˜(x) increase with increasing x. While ν˜1(x) can be qualitatively described on the basis of a simple mixture model, this is neither the case for the shape of the frequency-dependent conductivity σ(ν˜,x) nor for S˜(x). Both, σ(ν˜,x) and S˜(x) depend sensitively on the real defect structure consisting of Si grains embedded in the oxide matrix consisting of SiO2, SiO, and other suboxides.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2226-2234 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Because of its high diffusivity in silicon, aluminum is best suited for deep diffusions often required in high-voltage-power semiconductor devices. The ion implantation technique allows the reproducible low dosage doping necessary, e.g., for the new concepts of junction termination systems. The most important drawback of using aluminum as a p-type dopant in silicon is its low electrical activity after the anneal. In order to obtain a deeper insight into the mechanisms responsible for the loss of the electrical activity, we have studied the states of aluminum implanted into silicon before and after annealing by means of spreading resistance, secondary-ion mass spectroscopy, transmission electron microscopy, and energy-dispersive x-ray techniques. The case study presented here [Czochralski grown (100) silicon, implanted dose 3×1015 cm−2, junction depth 6 μm] reveals that the major source for the loss of the electrical activity is out-diffusion, i.e., segregation into the native silicon oxide layer and/or evaporation into the vacuum. In addition, the activity is reduced by the formation of aluminum oxide precipitates. The results are discussed in the light of optical studies on the same materials performed previously as well as on the basis of a diffusion model which allows for out-diffusion. The large rate constant for out-diffusion indicates that the native oxide layer represents a highly reactive surface for aluminum. From the diffusion model it is possible to calculate an approximate electrical activity A˜(xj) as a function of junction depth xj, which qualitatively reproduces well the observed activity A(xj). This demonstrates that our case study is representative for a large number of samples which were implanted and annealed under widely different conditions. Some technical processes which could possibly enhance the electrical activity are discussed.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: Previously, we reported a modest but significant reduction in the concentration of neuropeptide Y in frontal cortices from victims of suicide relative to age-matched natural or accidental death control subjects. The reduction in neuropeptide Y appeared to be greatest in a subgroup of victims of suicide for which there was indirect evidence of histories of depression. We pursued these initial findings in the present study by measuring neuropeptide Y concentrations in frontal cortices from natural or accidental death control subjects and from suicide victims in whom a firm diagnosis of major depression was established by psychiatric autopsy. Because several subjects with major depression had a comorbid diagnosis of alcoholism, a group of victims of suicide that had an Axis I diagnosis of alcohol dependence was also studied. No significant differences in neuropeptide Y concentrations were observed between control subjects and victims of suicide with major depression or victims of suicide with alcohol dependence. These findings do not support a role for neuropeptide Y in major depression.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: Comparisons of the activity of the G protein-mediated phosphoinositide signal transduction system and of G protein levels were made in two regions of frontal cortex from eight schizophrenic, alcohol-dependent, and control subjects. G protein-mediated phosphoinositide hydrolysis was measured by stimulating cortical membranes incubated with [3H]phosphatidylinositol with 0.3–10 µM guanosine 5′-O-(3-thio)triphosphate (GTPγS). In frontal cortex areas 8/9, GTPγS-induced phosphoinositide hydrolysis was 50% greater in schizophrenic than control or alcohol-dependent subjects, whereas there were no differences among these groups of subjects in the response to GTPγS in frontal cortex area 10. Agonists for dopaminergic, cholinergic, purinergic, serotonergic, histaminergic, and glutamatergic receptors coupled to the phosphoinositide signaling system increased [3H]phosphatidylinositol hydrolysis in a GTPγS-dependent manner. Responses to most agonists were similar in all three subject groups in both cortical regions, with the largest difference being a 40% greater response to dopaminergic receptor stimulation in frontal cortex 8/9 from schizophrenic subjects. Measurements of the levels of phospholipase C-β, and of α-subunits of Gq, Go, Gi1, Gi2, and Gs, made by immunoblot analyses revealed no differences among the groups of subjects except for increased Gαo in schizophrenic subjects and increased Gαo and Gαi1 in alcohol-dependent subjects. These results demonstrate that schizophrenia is associated with increased activity of the phosphoinositide signal transduction system and increased levels of Gαo, whereas the phosphoinositide system was unaltered in alcohol dependence, but Gαo and Gαi1 were increased.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Journal of neurochemistry 91 (2004), S. 0 
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Disruptions of glutamatergic and noradrenergic signaling have been postulated to occur in depressive disorders. Glutamate provides excitatory input to the noradrenergic locus coeruleus (LC). In this study, the location of immunoreactivity against neuronal nitric oxide synthase (nNOS), an intracellular mediator of glutamate receptor activation, was examined in the normal human LC, and potential changes in nNOS immunoreactivity that might occur in major depression were evaluated. Tissue containing LC, and a non-limbic, LC projection area (cerebellum) was obtained from 11 to 12 matched pairs of subjects with major depression and control subjects lacking major psychiatric diagnoses. In the LC region, nNOS immunoreactivity was found in large neuromelanin-containing neurons, small neurons lacking neuromelanin, and glial cells. Levels of nNOS immunoreactivity were significantly lower in the LC (− 44%, p 〈 0.05), but not in the cerebellum, when comparing depressed with control subjects. nNOS levels were positively correlated with brain pH values in depressed, but not control, subjects in both brain regions. Low levels of nNOS in the LC may reflect altered excitatory input to this nucleus in major depression. However, pH appears to effect preservation of nNOS immunoreactivity in subjects with depression. This factor may contribute, in part, to low levels of nNOS in depression.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 462 (1986), S. 0 
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2074-2080 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The main problem associated with the use of aluminum as a p-type dopant in silicon power devices is its low electrical activity in silicon after the anneal process. In order to obtain a deeper insight into the possible mechanisms responsible for the loss of electrical activity, it is necessary to study three different states of the p-n junction fabrication: (1) the unimplanted starting or reference material; (2) the aluminum-implanted material; and (3) the implanted and annealed material. In this paper we present a detailed analysis of reflectivity and transmission measurements of the three different states extending from the far-infrared to the UV region, as well as depth profiles of the reflectivity from as-implanted and bevelled samples. From these investigations we have obtained information about two important aspects, namely lattice damage and free-carrier properties. The refractive index across the implanted layer is essentially constant and considerably larger than that of the crystalline state; together with recent transmission electron microscopy studies it is suggested that this change in refractive index is due to the formation of broken or weakened bonds. In the annealed state those defects induced by implantation which produce a change of the optical properties are healed out to a high degree. From the free-carrier absorption observed in the far-infrared direct information is obtained about the electrical properties, i.e., the mean concentration and mobility of the holes associated with the electrically active aluminum atoms in the thin p-type layer produced by annealing. We obtain an electrical activity (percentage of electrically active Al atoms) of 17%. This result is discussed and compared with recent sheet resistance-, spreading resistance-, and secondary-ion mass spectrometry data obtained from the same sample.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 0920-9964
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Medicine
    Type of Medium: Electronic Resource
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