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  • 1
    Electronic Resource
    Electronic Resource
    Relaxation of radiation damage in silicon planar detectors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4072-4076 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The behavior of radiation-induced carbon-related defects in high-resistivity silicon detectors has been investigated. The defects were introduced by α-particle irradiation and investigated by deep-level transient spectroscopy. An unusual defect behavior consists in low-temperature annealing, including self-annealing at room temperature, of the interstitial carbon Ci with a simultaneous increase of the Ci-Oi-complex concentration. The kinetic parameters of the process have been determined from the increase of the Ci-center concentration versus time. Two annealing velocities have been observed, which arise from different heat treatments during the detector fabrication process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357356
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  • 2
    Electronic Resource
    Electronic Resource
    Amplification of the signal in triode structures of ion detectors based on 6H-SIC epitaxial films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4447-4449 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The possibility of about 50 times the inneramplification of signals in SiC-based detectors of short-range ions is shown. The detector has an n–p–n+-like structure, where the p-type base was grown epitaxially on a 6H n+-SiC substrate. To complete the structure a Schottky barrier was made on top. Detector parameters were investigated in a "floating base" regime. Alpha particles from 244Cm were used and the augmentation of signal (E) with increasing applied voltage (U) was investigated. A superlinear increase of E was observed with a significant (tens of times) amplification of the introduced by the alpha particle nonequilibrium charge. It was also found that the nonuniformity of the diffusion-drift carrier transport parameters in the films does not exceed 10%. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1428765
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  • 3
    Electronic Resource
    Electronic Resource
    Measurements of the Fano factor in germanium
    Amsterdam : Elsevier
    Nuclear Instruments and Methods 94 (1971), S. 147-149 
    Details
    ISSN: 0029-554X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0029-554X(71)90352-1
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  • 4
    Electronic Resource
    Electronic Resource
    On the generation of radiation defects by accelerated ions in silicon (1998)
    Springer
    Technical physics letters 24 (1998), S. 793-796 
    Details
    ISSN: 1090-6533
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The introduction of centers of generation of charge carriers in pure Si is examined in the framework of the interaction of nonequilibrium defects and charge carriers directly in the track of an ion. An experiment on a particles with energies of 1.0–5.0 MeV is supplemented by the results of a numerical simulation of the stopping of such particles in Si. It is shown that the primary defects arising at the end of the track form a smaller number of generation centers. This is explained by the trapping of components of Frenkel pairs of charge carriers, the concentration of which in the track undergoes a 3-fold increase by the end of the range. Charge exchange between vacancies and interstitial atoms both accelerates recombination and lowers the number of primary defects participating in the subsequent complex-formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1262271
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  • 5
    Electronic Resource
    Electronic Resource
    Behavior of epitaxial GaAs layers as α particle detectors (1998)
    Springer
    Technical physics letters 24 (1998), S. 250-253 
    Details
    ISSN: 1090-6533
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The properties of epitaxial GaAs-based p +-n structures used as light-ion (α particle) were studied. A comparison is made with the latest published data on the possibilities of present-day semi-insulating GaAs (SI-GaAs). It is noted that the content of impurities and structural defects forming deep levels in the band gap of the material is two orders of magnitude lower in epitaxial layers. The deep levels determine the conditions of transport of nonequilibrium carriers in the detector, allowing for trapping of the carriers, and they also determine the electric-field profile. The charge-carrier lifetime was found to be ≥ 200 ns. This is two orders of magnitude longer than the values for SI-GaAs, in complete agreement with the lower content of deep centers. It is shown how deep centers influence the field profile, forming a quite large region of low field values.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1262073
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  • 6
    Electronic Resource
    Electronic Resource
    Physical aspects of precise spectrometry of α-particles with silicon pn-junction detectors
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 84 (1994), S. 51-61 
    Details
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0168-583X(94)95703-7
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  • 7
    Electronic Resource
    Electronic Resource
    6H-SiC epilayers as nuclear particle detectors (2000)
    Springer
    Semiconductors 34 (2000), S. 243-249 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Schottky diodes based on the n-n + 6H-SiC epilayers grown by sublimation epitaxy and also the layers produced by CREE company (USA) were used as detectors of α-particles of spontaneous decay. Since the thickness of n-layers was smaller than the range of the particles, geometrical parameters of the experiment differed from conventional ones; in the latter case, a particle is brought to rest in the region of electric field in the detector. The calculated and experimental data were compared to study the special features of transport of nonequilibrium charge under the conditions of complete and partial depletion of the structure. It is shown that characteristics of the material that govern the transport of charge carriers can be deduced from the analysis of the behavior of the signal amplitude and the shape of the pulse-height spectrum in relation to bias voltage applied to the Schottky diode. It follows from the results that the present-day sublimation-grown SiC layers are suitable for use as the basis for fabrication of nuclear particle detectors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187940
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  • 8
    Electronic Resource
    Electronic Resource
    Special features of alpha-particle detection with thin semi-insulating 6H-SiC films (2000)
    Springer
    Semiconductors 34 (2000), S. 1386-1390 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The p +-n-n + structures based on 6H-SiC films grown by chemical vapor deposition on the n + substrate were irradiated with 8-MeV protons with a dose of 8×1015 cm−2. In order to stabilize the material, it was annealed for 10 min at 450°C. As a result, the resistivity of the film was ρ=5×109 Ω cm. The effect of proton irradiation was studied by alpha spectrometry. The 5.77-MeV alpha particles were detected for both reverse and forward bias voltages applied to the structure. The results of the following two modes of detection were compared: (i) a particle traverses the structure without losing much of its energy, and (ii) a particle is stopped in the structure. It is shown that, in the former case and under a forward bias, a signal is formed by a mechanism involving a “through-conducting channel.” This makes it possible to determine the product of lifetime of electrons by their mobility. The situation in which the particle range R does not exceed the film thickness was analyzed; this situation is typical of spectrometry. It is noted that a decrease in R results in different behavior of the signal for the bias voltages of opposite polarity. Thus, for forward bias, the signal amplitude decreases more rapidly and for larger values of R.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1331796
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  • 9
    Electronic Resource
    Electronic Resource
    Properties of p +-n structures with a buried layer of radiation-induced defects (1998)
    Springer
    Semiconductors 32 (1998), S. 325-331 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The p +-n structures based on n-type Si with dopant density 1.7×1013–1.2×1014 cm−3 were irradiated with 238Pu α particles. A layer containing radiation-induced defects with a density of the order of 3×1013 cm−3 was produced at a depth of 20 µm. This defect density gave rise to intense draining of nonequilibrium carriers in the injection-extraction regime with stationary injection as well as with pulsed generation by single particles. This makes it possible to treat the damaged layer as a plane, introduced into the bulk, with an infinite surface recombination rate. The radiation-induced defects also participated in decreasing the conductivity. A characteristic space charge distribution and, correspondingly, a bias dependence of the capacitance are observed in the structure under reverse bias. Despite the presence of formally three charge regions, four sections appear on the capacitance curve. This latter effect is due to the “additional” charge step arising in the contact potential difference field and is characteristic of compensated deep levels in semiconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187394
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  • 10
    Electronic Resource
    Electronic Resource
    Determination of the uniformity of the carrier lifetime in a material from the profile of the amplitude spectrum of an ion detector (1998)
    Springer
    Technical physics letters 24 (1998), S. 186-188 
    Details
    ISSN: 1090-6533
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract An analysis is made of charge transport in the neutral base of a p +-n structure as a result of its diffusion to the boundary of the p-n junction under conditions where nonequilibrium carriers are generated by single α-particles. It is assumed that nonuniformity of the carrier lifetime (τ), described by a Gaussian distribution, exists over the area of the structure. The profile of the transported charge spectrum is calculated for these conditions and its correlation with the measure of nonuniformity τ is obtained. Since the tracks of the diffusing α-particles occupy an extremely small volume, recording them is equivalent to local probing of the material for τ. It is suggested that the calculated function should be used as a calibration function to determine the spread of τ values in materials. The method is tested on Si for a surface-barrier structure by recording 8.78 MeV π-particles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1262046
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