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  • 1
    Electronic Resource
    Electronic Resource
    A nonvolatile ferroelectric memory device with a floating gate (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3275-3276 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An adaptive ferroelectric field-effect transistor (FET) with a floating gate has been developed using a thin film of lead titanate ( PbTiO3) deposited on a n/p+ substrate by rf sputtering. This device utilizes the charge storage on the floating gate to control the n layer conductivity of a n/p+ Si substrate and performs a memory function, in which the drain conductance changes in proportion to the charge storage density on the floating gate. The device is a bulk channel field transistor structure and different from the conventional surface channel-type floating gate memory device. Thus, it possesses higher mobility and fast access time (〈160 ns). The FET has low write/erase voltages (≤10 V) and its write/erase cycles are more than 106. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118034
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  • 2
    Electronic Resource
    Electronic Resource
    Experimental characterization and modeling of a ferroelectric bulk channel field effect transistor with nonvolatile memory characteristics (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 812-814 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A ferroelectric bulk channel field effect transistor has been developed using a thin film of lead titanate (PbTiO3) deposited on a n/p+ Si substrate by rf sputtering, in which the drain conductance changes in proportion to the remanent polarization of PbTiO3 thin film induced by the gate pulse voltage. Since the remanent polarization will stay a long time after the gate voltage is removed, the device possesses the memory characteristics. The device is a bulk channel structure and different from the reported surface channel type ferroelectric field effect transistor. Therefore, it possesses higher mobility. In this letter, current–voltage curves have been shown to compare with the theoretical analysis. The fit is quite good. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117900
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    An infrared optical field effect transistor with high speed response (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 299-300 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An infrared optical field effect transistor has been developed using a thin film of lead titanate (PbTiO3) deposited on a n/p+ Si substrate by rf sputtering, in which the drain conductance changes in proportion to the infrared light power. A fast response with a rise time of 2.3 μs has been obtained that is about 150% faster than the other types of thermal infrared optical field effect transistor. The developed infrared sensor is a bulk channel field effect transistor structure, that possesses higher mobility. Thus, faster speed can be obtained. In addition, the sensor has been prepared on a Si substrate, which offers the potential to develop Si-based infrared optical-electric integrated circuits. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116065
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  • 4
    Electronic Resource
    Electronic Resource
    Reduction of post-weld shift in semiconductor laser packaging (1996)
    Springer
    Optical and quantum electronics 28 (1996), S. 1741-1746 
    Details
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract A reduction of post-weld shift (PWS) in semiconductor laser packaging using a laser welding technique is presented. It is found that the PWS and its association with the power coupling loss of the laser packaging can be reduced under proper pressure constraint. Characteristics of defect mechanisms in laser welding techniques for semiconductor laser packaging are also investigated experimentally. The results in the stainless-to-Kovar joints show that the surface cracks are dependent on the Au thickness on the Kovar material. The low solubility of gold in the Kovar is identified as the defect mechanism for surface cracks. Preliminary reliability data demonstrated that these laser packages without crack defects in the welded joints are reliable.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00698539
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    Paper (German National Licenses)
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