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  • 1
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of boron-doped ZnO thin films for solar cells grown by metalorganic chemical vapor deposition (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7119-7123 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The highly conductive and textured ZnO films have been grown by metalorganic chemical vapor deposition using diethylzinc and H2O as reactant gases. The B2H6 gas has also been successfully used as an n-type dopant gas to obtain highly conductive ZnO with a sheet resistivity for 2-μm-thick film as low as 10 Ω/(D'Alembertian) at the very low temperature of 150 °C. It was found that the crystal orientation and grain structure change with B2H6 flow rate. The decreasing of the film transmittance due to the free-carrier absorption in the wavelength region above 1000 nm was observed and it seems that the impurity scattering was the dominant interaction during this process. The shift of the absorption edge due to band filling was also observed as the B2H6 flow rate was increased.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349794
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  • 2
    Electronic Resource
    Electronic Resource
    Modulation-doped ZnSe:Mn dc thin-film electroluminescent devices (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4706-4710 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two types of ZnSe:Mn dc thin-film electroluminescent (EL) devices were prepared by molecular beam growth: a Au/ZnSe:Mn/GaAs cell with a single-crystal ZnSe:Mn host layer and an Al/ZnSe:Mn/ITO cell with a polycrystal ZnSe:Mn host layer. Modulation doping was used to investigate the active region in the ZnSe:Mn layer. It was found that threshold voltage characteristics of the Au/ZnSe:Mn/GaAs cell were influenced by the Mn doping position in the ZnSe host layer, but in the Al/ZnSe:Mn/ITO cell, there was no dependence of threshold voltage on the Mn doping position. The dependence of luminescence intensity-injection current characteristics on the Mn doping position showed that the excitation probability of Mn luminescence centers by injected electrons increased in the region close to the negative electrode for both types of EL cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335331
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  • 3
    Electronic Resource
    Electronic Resource
    S100a0 (αα) Protein Is Present in Neurons of the Central and Peripheral Nervous System (1984)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 43 (1984), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: The cellular distribution of S100 subunits in human brain and peripheral nerves was studied by means of an immunohistochemical technique using antibodies specific to the a subunit or the β subunit of S100 protein. The results indicate that the distribution of the a subunit and the β subunit is different among cell types in the nervous tissue, and that neurons in the brain and peripheral nerves contain only the a subunit, or S100a0 protein. The subunit distribution also appears to be different at an intracellular level, where the immunoreaction products for the a subunit show granular arrangement whereas those for the β subunit are found diffusely in the cytoplasm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-4159.1984.tb05415.x
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  • 4
    Electronic Resource
    Electronic Resource
    Raman scattering from longitudinal-optical phonon-plasmon-coupled mode in carbon-doped p-type InGaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7265-7268 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Raman scattering by longitudinal-optical (LO) phonon-plasmon-coupled (LOPC) mode in carbon-doped p-type InGaAs with indium composition x≈0.3 and hole concentration from 1017 to 1019 cm−3 grown by metalorganic molecular beam epitaxy was studied experimentally. Only one LOPC mode appears between the GaAs-like and InAs-like LO modes was observed. The peak position of the LOPC mode is near the GaAs-like transverse-optical mode frequency and is insensitive to the hole concentration. The linewidth and intensity of the LOPC mode are dependent strongly on the carrier concentration, while the two LO modes decrease and become invisible under the high doping level. It was shown that the plasmon damping effect plays a dominant role in Raman scattering by LOPC mode for the p-type InGaAs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360440
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  • 5
    Electronic Resource
    Electronic Resource
    Over-relaxation of misfit strain in heavily carbon-doped GaAs grown by metalorganic molecular beam epitaxy after annealing (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1104-1106 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using double crystal x-ray diffractometry (XRD) and transmission electron microscopy (TEM), the annealing effects on heavily carbon-doped GaAs films were studied. From isochronal annealing, the evolution of compressive strain in carbon-doped GaAs films was observed by XRD. From cross-sectional TEM, unusual misfit dislocations with extra-half planes on the GaAs side were observed in the sample annealed at 900 °C for 30 min in addition to normal misfit dislocations with extra-half planes on the film side. A possible mechanism for the formation of such misfit dislocations is proposed based on the over-relaxation of misfit strain in the film. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114975
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  • 6
    Electronic Resource
    Electronic Resource
    Realization of both p- and n-type conduction for ZnSe-ZnTe strained-layer superlattices (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1602-1604 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conduction types of ZnSe-ZnTe strained-layer superlattices (SLS's) have been controlled by using the modulation doping technique. Two kinds of modulation-doped SLS's were prepared. One of them consisted of gallium (Ga) doped ZnSe layers and undoped ZnTe layers. The other consisted of undoped ZnSe layers and antimony (Sb) doped ZnTe layers. The conduction types of the samples modulation doped with Ga and Sb were shown to be n and p type, respectively whereas the undoped samples exhibited n-type conduction. The electrical properties of the undoped and modulation-doped samples were evaluated by the van der Pauw method. The carrier concentrations of all types of samples were about 5×1013/cm3 at room temperature. The temperature dependence of the electrical properties was measured for an undoped sample and a sample modulation doped with Sb. The carrier concentrations increased with temperature and reached about 1×1017/cm3 at 500 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98568
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  • 7
    Electronic Resource
    Electronic Resource
    Characterization of p-type GaAs heavily doped with carbon grown by metalorganic molecular-beam epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3975-3979 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p-type GaAs with doping levels of up to 5.8×1020 cm−3 has been grown by metalorganic molecular-beam epitaxy (MOMBE) using carbon (C) as a dopant. The mobility and minority-carrier diffusion length of the C-doped MOMBE layers were comparable to those of Be-doped MBE layers. The diffusion coefficient of C at 900 °C was estimated to be 6×10−15 cm2 /s which is about two orders of magnitude less than that of Be (1×10−12 cm2 /s). In addition, the lattice constant of C-doped GaAs was found to be 5.6533 A(ring) which completely matches that of the substrate, while the lattice constant of Be-doped GaAs decreases to 5.6467 A(ring) at a doping level of 2×1020 cm−3 as reported by Lievin et al. [Inst. Phys. Conf. Ser. No. 79, 595 (1985)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341356
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  • 8
    Electronic Resource
    Electronic Resource
    Plasma-assisted metalorganic chemical vapor deposition of ZnSe films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2216-2221 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe thin films were grown by plasma-assisted metalorganic chemical vapor deposition (MOCVD). Plasma-assisted MOCVD is a technique combining rf glow discharge decomposition (at 13.56 MHz) with conventional metalorganic chemical vapor deposition. This process may offer several advantages such as low-temperature growth, high chemical reactivity, cleaning effect of substrate surface, and good surface morphology. The metalorganic sources used were diethylzinc and diethylselenide. The epitaxial films were obtained at the low substrate temperature of 250 °C by plasma-assisted MOCVD. The grown films showed excellent surface morphology and uniformity over a large area. These films were applied to Al/ZnSe:Mn/ITO (indium tin oxide) dc-operated electroluminescent cells. As a manganese source, di-π-cyclopentadienyl manganese [(C5H5)2Mn] was successfully used.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336362
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  • 9
    Electronic Resource
    Electronic Resource
    Highly conductive and wide band gap amorphous-microcrystalline mixed-phase silicon films prepared by photochemical vapor deposition (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1427-1431 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Doped hydrogenated amorphous-microcrystalline mixed-phase silicon (μc-Si:H) films were prepared by the mercury photosensitized decomposition of a disilane-hydrogen gas mixture, by adding phosphine and diborane for n and p type, respectively. The maximum dark conductivity and optical band gap of the films were, respectively, 20 S cm−1 and ∼2.0 eV for n type, and 1 S cm−1 and 2.3 eV for p type. It is most significant that the gaseous ratio of hydrogen to disilane should be enhanced up to 70 for n type, and even 300 for p type, to obtain such a highly conductive and wide gap film. The crystallinity of the photodeposited μc-Si films appeared to be improved in comparison with that of films by conventional plasma glow discharge technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336071
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  • 10
    Electronic Resource
    Electronic Resource
    Lattice strain and lattice dynamics of ZnSe-ZnTe strained-layer superlattices (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1015-1022 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice strain and lattice dynamics of ZnSe-ZnTe strained-layer superlattices (SLSs) were examined by means of transmission electron microscopy and Raman scattering. Superlattice structures were confirmed from both transmission electron diffraction patterns and bright field images of the samples. Lattice distortions which originated from misfit strains were observed by the lattice image mode. The crystallinity of the adjacent layers was degraded when the layer thickness became large and polycrystalline structures were observed when the layer thickness exceeded the critical layer thickness. Raman scattering was used to assess the magnitude of the strain in the SLSs. Optical phonon frequencies of the components in SLSs were different from those frequencies of the bulk materials. The frequency shifts were used to quantify the strains in the SLSs. The observed shifts corresponded to the calculated values.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338191
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