Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
53 (1988), S. 2608-2610
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Successful growth of (100)ErAs single-crystal films on (100)GaAs has been demonstrated. Reflection high-energy electron diffraction, low-energy electron diffraction (LEED), and Rutherford backscattering with channeling indicate single-crystal growth. LEED from the ErAs shows a (1×1) structure. Overgrowth of GaAs on ErAs is found to be difficult due to the GaAs not wetting the ErAs surface and hence resulting in island growth. For a 150-A(ring)-thick film metallic behavior is observed with resistivities 17 and 70 μΩ cm at 1.5 K and room temperature, respectively. Low-temperature Hall measurements show the conduction to be dominated by electrons with an effective n-type mobility in the range 360 cm2/V s at 1.35 K.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100173
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