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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4183-4190 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: "Nongold'' NiGe Ohmic contacts were developed by a lift-off and annealing technique that was extensively used to fabricate the conventional AuGeNi contacts. The optimum conditions to prepare thermally stable, low resistance NiGe Ohmic contacts were determined by changing the Ge concentrations of the NiGe contacts from 13 to 43 at. %, and the deposition sequences of the Ni and Ge layers. Contact resistances of ∼0.8 Ω mm were obtained for both two-layered Ni/Ge and three-layered Ni/Ge/Ni contacts, with Ge concentrations of ∼38 at. % after annealing at 600 °C. The thermal stability of the electrical properties during subsequent annealing at 400 °C after contact formation was found to be influenced by the microstructure at the GaAs/metal interface. The excellent stability was obtained only when the NiGe contacts formed high melting point NiGe compounds. The present result indicated that removal of Au from the AuGeNi contacts was not satisfactory enough to improve the thermal stability of the AuGeNi contacts after contact formation. A model for the current transport mechanism through the GaAs/NiGe interface was also proposed by correlating the electrical properties and the microstructure. This model explained well the dependences of the contact resistances on the Ge concentrations and the deposition sequence of the Ni and Ge layers.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4191-4196 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New "nongold'' NiSiW Ohmic contacts to n-type GaAs have been developed using an electron beam evaporator and a rapid thermal annealer. Ohmic behavior was found to have dependencies on the Si concentrations of the NiSiW contacts and the annealing condition. The Ohmic contacts with 40 at. % Si, prepared by annealing at 650 °C, had smooth surfaces and yielded excellent thermal stability during subsequent annealing at 400 °C after contact formation. The microstructural analysis of the interface between the contact metal and the GaAs substrate was carried out using x-ray diffraction, Auger electron spectroscopy, and cross-sectional transmission electron microscopy. It was concluded that the key parameter that influenced the electrical properties was the NiAs compounds formed during contact annealing.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Fermentation and Bioengineering 76 (1993), S. 184-190 
    ISSN: 0922-338X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Crystal Growth 124 (1992), S. 427-432 
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 167 (1990), S. 754-760 
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Electron Spectroscopy and Related Phenomena 61 (1992), S. 83-101 
    ISSN: 0368-2048
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1432-0614
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Abstract The cyclodextrin glucanotransferase (CGTase) gene of alkalophilic Bacillus sp. A2-5a was cloned and expressed in Bacillus subtilis ANA-1 as a host. The DNA region included an open reading frame encoding a 704-amino-acid polypeptide with a typical raw starch-binding motif in its C-terminal region. The CGTase purified from Bacillus sp. A2-5a bound to raw starch as strongly as porcine pancreas α-amylase, as expected from the sequence motif. A chromosomal region (a DNA fragment of about 14.1 kbp) including the CGTase gene was also cloned and the nucleotide sequence was determined. Possible cyclodextrinase and putative cyclodextrin-binding protein genes were found in the flanking region of the CGTase gene, which implied that the novel starch-degradation pathway postulated for a gram-negative bacterium [Klebsiella oxytoca; Fiedler et al. (1996) J Mol Biol 256: 279–291] also exists in a gram-positive bacterium i.e. Bacillus.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Artificial life and robotics 2 (1998), S. 24-27 
    ISSN: 1614-7456
    Keywords: Robotic system ; Genetic algorithms ; Elastic system ; Control design
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science
    Notes: Abstract This paper presents a new and practical method for a control design of a robotic system. In general, actuators in robotic systems are set with gears whose characteristics are elastic. Since a state feedback-type digital controller is usually used for such a robotic system, the design of the feedback gain of the controller is important, because undesirable vibrations or an overshoot in responses occur for high gains. Therefore the desired response, the output of a reference model, is designed first, and the feedback gains are determined so that the response will coincide with the desired response, which is an optimization problem. The gradient method works to some extent, but it takes a long time to get a satisfactory result. Thus we applied the genetic algorithm (GA) to this nonlinear optimization problem, which gave the very first convergence. The gains obtained have many useful applications. The results of a simulation are also given.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1617-4623
    Keywords: Key words Yeast linear plasmid ; Plasmid localization ; Non-homologous recombination ; DNA circularization ; Nuclear uptake
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract The linear plasmid pCLU1 from the yeast Kluyveromyces lactis normally replicates in the cytoplasm, with the aid of the helper linear plasmid pGKL2, using terminal protein (TP) as a primer. However, it relocates to the nucleus when selection is applied for the expression of a plasmid-borne nuclear marker. Migration to the nucleus occurred in K. lactis at a frequency of about 10−3/cell ten or more times higher than the rate observed in Saccharomyces cerevisiae. The nuclear plasmids existed only in a circularized form in K. lactis, while in S. cerevisiae a telomere-associated linear form is also found. Sequence analysis showed that circularization in K. lactis was caused by non-homologous recombination between the inverted terminal repeat (ITR) at the ends of the linear form and non-specific internal target sites in pCLU1. No sequence similarity existed among the junction sites, indicating that the free ITR end plays a crucial role in circularization. In S. cerevisiae, circular plasmids were generated not only by non-homologous recombination, but also by homologous recombination between short direct repeats within pCLU1. Circularization via the ITR end was observed independently of RAD52 activity. Sequences highly homologous to ARS core elements, 5′-ATTTATTGTTTT-3′ for K. lactis and 5′-(A/T)TTTAT(T/G)TTT(A/T)-3′ for S. cerevisiae, were detected at multiple sites in the nuclear forms of the plasmids.
    Type of Medium: Electronic Resource
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