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  • 1
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The correlations between structural, chemical, electrical, optical properties of in situ phosphorus-doped hydrogenated microcrystalline silicon prepared by plasma-enhanced chemical vapor deposition have been studied by high-resolution transmission electron microscopy, secondary-ion mass spectrometry, electrical conductivity, and optical measurements. Microcrystallinity has been observed at a substrate temperature as low as 100 °C with a 1% dilution of (1% PH3/SiH4) in H2. In situ phosphorous-doped hydrogenated microcrystalline silicon is best grown at 200–300 °C in terms of microstructure, H and P content, and dopant activation. The effects of thermal processing and the use of silicon nitride cap deposited prior to anneal on the structure and properties of phosphorous-doped hydrogenated microcrystalline silicon are also reported. The use of a silicon nitride capping layer is shown to inhibit recrystallization of hydrogenated microcrystalline silicon during rapid thermal anneal.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 313-314 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The high-temperature superconducting phase YBa2Cu3O7−δ has been found to be unstable with respect to and decompose into other metal oxides (Y2BaCuO5, CuO, Cu2O, BaCuO2, and others) at stresses greater than 100 MPa at temperatures from 700 to 950 °C. Hot isostatic pressing and hot uniaxial pressing were used to apply pressure to and to densify porous YBa2Cu3O7−δ. X-ray diffraction and scanning electron microscopy/x-ray spectroscopy were used to determine phase purity before and after pressing. The instability of the superconducting phase should be considered during the development of hot mechanical densification and shape-forming processes, since a limit exists for the time at temperature and pressure that the YBa2Cu3O7−δ phase can withstand before decomposing.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Chromatography B: Biomedical Sciences and Applications 164 (1979), S. 399-403 
    ISSN: 0378-4347
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physica B: Physics of Condensed Matter 152 (1988), S. 134-145 
    ISSN: 0921-4526
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Journal of nondestructive evaluation 2 (1981), S. 219-229 
    ISSN: 1573-4862
    Keywords: acoustics ; surface acoustic waves ; Rayleigh waves ; ceramics ; surface cracks ; residual stresses ; crack extension ; NDE
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mathematics
    Notes: Abstract An investigation of scattering from surface cracks has been conducted. In particular, the change in the reflection coefficient of a Rayleigh wave incident on a surface indentation crack has been measured as the sample is stressed to fracture. The acoustic measurements have been correlated with the stable crack extension that precedes final failure. The crack extension behavior of as-indented specimens was found to differ appreciably from that of annealed specimens. Cracks in the annealed samples exhibited partial crack tip closure, but little stable extension, whereas cracks in the as-indented samples displayed both crack closure and irreversible crack growth. This behavior has been rationalized by invoking concepts based upon the residual stresses created by indentation.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 22 (1987), S. 3901-3906 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A test protocol pivoting about stress cycling where the load waves were trapazoidal and the cycling frequency controlled by balanced time on load and off load was used to determine frequency, mean tensile stress, and compressive stress effects on the creep-fatigue behaviour of the Pb−Sn eutectic solder alloy at ambient temperature. It is consistently found that the minimum creep (or cyclic creep) rate decreases as frequency increases, that is, as hold time decreases. Both the number of cycles to failure as well as the time to failure increases as frequency increases. The cyclic creep rate increases drastically and the number of cycles to failure decreases drastically as the mean applied stress is increased. These results are consistent with anelastic strain recovery mechanism for creep-fatigue interaction. Similar results are also found in butt-joint solder junction configured specimens.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 15 (1980), S. 2046-2058 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract It is observed that creep response in hot-pressed silicon is characterized by two parallel phenomena; one accounts for a persistent non-recoverable plastic deformation and the other for a transient viscoelastic recoverable deformation. The persistent creep component is time-dependent, and apparently follows parabolic time kinetics. It is further observed that creep is characterized by a power law stress exponent of about 4 and an activation energy of 848 kJ mol−1. The viscoelastic recoverable component of strain is found to be independent of the total plastic strain in the material. The recovery rate at any given time is directly proportional to the preceding creep stress and therefore can be considered linear viscoelastic. The creep compliance of the viscoelastic transient is temperature-dependent with an activation energy of about 722 kJ mol−1. It is further observed that the viscoelastic recovery is characterized by a spectrum of retardation times and can be modelled by a series of Kelvin analogue models. Finally, the viscoelastic recovery and the viscoelastic component of subsequent creep appear to be inversely related and apparently obey Boltzman superposition. A model is developed for the creep and recovery behaviour of hot-pressed silicon nitride consistent with all experimental observations and based in relative grain motion accommodated by the fluid grain-boundary glass liquid flow, cavitation and wedge opening.
    Type of Medium: Electronic Resource
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