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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3754-3759 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have carried out extensive Raman scattering investigations of the damage caused by the dry etching in GaAs. The heavily doped n+-GaAs (2–3×1018 cm−3) allows the study of the coupled longitudinal optical (LO) phonon-plasmon mode as a probe to assess the dry etch-induced damage. Three etching techniques were used including conventional radio frequency (rf) reactive ion etching (RIE), ion beam etching (IBE), and electron cyclotron resonance radio frequency reactive ion etching (ECR-RIE). It is demonstrated that the etched damage is confined to a few tens of nanometers after 20 nm of material is etched away. ECR-RIE etching produces the smallest damage. It is found that in RIE etching, as etching proceeds, the depletion depth saturates while for purely physical etching (IBE) the depletion depth increases continuously, at least under the conditions used.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6250-6252 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relaxation of the initial permeability has been measured in polycrystalline Ti-doped Ba–W hexaferrites with nominal composition BaTixFe18−xO27, with x ranging among x=0 and 0.3. The samples have been sintered at different temperatures in the 1250 °C〈T〈1350 °C range in a reducing CO2 atmosphere and rapidly quenched to promote the presence of crystal vacancies. X-ray diffraction spectra reveal the presence of hexaferrite as main phase. In the temperature range between 80 and 500 K, the time decay of the initial permeability after sample demagnetization has been plotted by means of isochronal curves. The isochronal disaccommodation spectra show an increase in the amplitude of the different disaccommodation peaks in substituted samples regarding pure Ba–W hexaferrites. These peaks are centered at 180, 300, and 380 K and they are related to the presence of both ferrous cations and lattice vacancies. The increase of the disaccommodation maxima in Ti-substituted hexaferrites is ascribed to the additional amount of ferrous cations induced by the presence of Ti cations, in order to maintain electrical neutrality. On the other hand, the isochronal spectrum in pure Ba–W shows another relaxation peak at 240 K which almost disappears in substituted hexaferrites, even with the lowest Ti doping analyzed. This behavior is explained in terms of the increasing hindrance to the mechanisms responsible for this ionic relaxation process, owing to the site occupation by the nonmagnetic Ti cations within the hexagonal structure. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8512-8515 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on our dc conductivity measurements of mixed samples of polyaniline in the conducting form blended with polyaniline in the insulating form and made conducting subsequent to processing. Emeraldine base polyaniline (PANEB) dissolved in N-methylpyrrolidinone (NMP) and emeraldine base polyaniline doped with camphor sulfonic acid (CSA) but dissolved in NMP [and also in dimethyl sulfoxide (DMSO)] were mixed in various ratios according to the symbolic notation (PANCSA-NMP)1−x(PANEB-NMP)x and (PANCSA-DMSO)1−x(PANEB-NMP)x, respectively. Films obtained were then equilibrated in 1 M HCl for a period of 40–60 h and vacuum dried overnight prior to performing conductivity measurements. It is shown that the room temperature conductivity increases with increasing values of x. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6481-6484 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article reports a photoreflectance study of the process-induced strains in both dry etched CdTe/Cd0.875Mn0.125Te and GaAs/Al0.3Ga0.7As nanostructures patterned by electron beam lithography. The results show that compressive strains can be introduced in both the dry etched nanostructures and the layers underneath the etched surfaces due to the introduction of defect complexes and/or crystographic damage inflicted in the fabrication process. The effect of post dry etch thermal annealing on the strains in the dry etched nanostructures has also been studied. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5434-5438 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance and photoluminescence were used to study GaAs/AlGaAs quantum wells (QWs) as they were partially intermixed using SiO2 capped rapid thermal annealing. As the annealing temperature was increased, the experimental photoreflectance results showed spectral features moving to higher energies and merging to form broad peaks. This is explained by changes in the shapes of the originally square wells, which result in a convergence of their subbands around certain energies. The interpretation of these changes showed that the partially intermixed QWs were well described by an error-function profile.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3571-3578 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the low-temperature emission of Al0.48In0.52As under high pressures from 1 bar up to 92 kbar, paying special attention to the changes in luminescence mechanisms that occur concurrently with the crossover between the Γ- and the X-related states. By investigating the temperature and excitation power dependence of the photoluminescence together with the photoluminescence excitation, we demonstrate the low-temperature emission of Al0.48In0.52As is due to neutral donor-acceptor-pair (D0,A0) transitions with a relatively deep acceptor. This occurs in both the Γ- and the X-related states. We suggest the shallow donor ground states associated with the X and the Γ conduction bands seem to be tied quite rigidly to these conduction bands. Variations in the donor binding energies with the pressure and the Γ-X related state crossover seem to be minor. The linear pressure coefficients αΓ and αX of the (D0,A0) related to the Γ and the X levels in the conduction band are 7.9±0.1 and −2.9±0.1 meV/kbar, respectively. The Γ-X related state crossover occurs at ∼52.5±0.5 kbar at 2 K. The direct band gap EΓg and the indirect band gap Exg of Al0.48In0.52As are ∼1.61 and ∼2.17 eV at 1 bar and 2 K, respectively.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7164-7168 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report resonant luminescence studies in ultrathin InAs quantum-well structures. Under double resonant conditions, sharp lines induced by longitudinal optical phonons were observed in the emission spectrum, in addition to the broad band luminescence. These sharp lines exhibited moderate circular polarizations whereas the linear polarization was negligible, indicating a resonant luminescence process. The properties of these sharp lines observed in InAs monolayer quantum wells are quite different from those observed previously in GaAs-AlxGa1−xAs quantum wells under similar conditions. InAs phonons were found to participate in the exciton resonant scattering process at high magnetic fields where double resonant conditions are fulfilled. InAs-like phonon energy is determined to be close to 29.9 meV, in good agreement with the energy expected for a uniform ultrathin elastically strained InAs layer. We performed various circular and linear polarizations to investigate the resonant luminescence process in thin InAs layers inserted in GaAs. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2830-2832 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using contactless photoreflectance at 300 K, we have studied several GaAs/Ga0.7Al0.3As quantum dot arrays fabricated by reactive-ion etching using SiCl4. The spectrum from a control sample that had no dots also was recorded. From the observed shifts of the fundamental conduction to heavyand of the process-induced strain in the dots.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 946-948 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present experimental and theoretical results on the low-temperature luminescence intensity of dry-etched GaAs-AlxGa1−xAs quantum dots. The luminescence intensity was found to decrease by two orders of magnitude with the decrease of dot sizes from 1 μm to 60 nm. Our intrinsic model of the emission yield invokes slower momentum and energy relaxation mechanisms as the lateral dimensions decrease. The additional extrinsic effect considered involves carrier diffusion with a surface nonradiative recombination velocity. Combining intrinsic and extrinsic effects and using a surface recombination velocity of ∼105 cm/s for GaAs, we can obtain a good fit to the data.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the temperature dependence of the linewidth, Γ(T), of the fundamental absorption edge in bulk GaAs and four GaAs/Ga0.7Al0.3As single quantum wells of different well width using photoreflectance. As a result of the size dependence of the exciton-longitudinal optical phonon interaction, the thermal broadening of the linewidth diminishes as the dimensionality and size of the system are reduced.
    Type of Medium: Electronic Resource
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