Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Characterization of InP/GaAs epilayers grown on Si substrates by low-pressure organometallic vapor phase epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 880-882 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial growth of InP on Si with an intermediate GaAs buffer layer by low-pressure organometallic vapor phase epitaxy is reported. Excellent crystallinity of InP epilayers with specular surfaces can be reproducibly obtained. The carrier concentration profile shows that the carrier distribution in the InP layer is very uniform, while an apparent reduction in concentration occurs at the InP/GaAs interface. The 77 K photoluminescence (PL) of the InP layer exhibits a strong near-band-edge emission. No evident shift in PL peak energy for the InP/GaAs/Si sample compared with that for the InP homoepitaxial sample was first observed in this study. These results are superior to those reported previously for the InP/Si heteroepitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99260
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Growth and characterization of InP epilayers on ZnSe-coated Si substrates by low-pressure metalorganic vapor phase epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 107-109 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial growth of InP on ZnSe-coated Si substrates by low-pressure metalorganic vapor phase epitaxy is reported for the first time. Single-crystal InP epilayers with specular surfaces can be obtained. The ZnSe buffer layer, which is evaporated onto the Si substrate in another furnace, is effective in reducing the magnitude of strain in the InP layer. The best room-temperature electron mobility of the undoped InP epilayer can reach 3100 cm2 /(V s) with a carrier concentration of 1.5×1015 cm−3 . It was found that the InP electron mobility is critically dependent on the ZnSe buffer-layer thickness. The efficient photoluminescence compared with that of InP homoepitaxy indicates that the InP heteroepilayer is of high optical quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100383
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Material properties of InP-on-Si grown by low-pressure organometallic vapor-phase epitaxy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1213-1216 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped InP epilayers have been grown directly on (100) Si substrates by low-pressure organometallic vapor-phase epitaxy. The surface morphology, x-ray diffraction peak width, and ion backscattering yield each improve substantially with InP thickness (0.1–3 μm). X-ray and photoluminescence (PL) measurements demonstrate that the InP heteroepilayers are under biaxial tensile strain in the surface parallel direction. The carrier concentration profile shows that the carrier distribution in the InP layer is very uniform, while an apparent reduction in concentration occurs at the InP/n-type Si interface. The 77-K PL spectrum reveals a strong near-band-edge emission with a full width at half maximum of 14 meV. Post-growth thermal annealing at 780 °C was confirmed to be effective in improving the overall quality of InP-on-Si. The results presented are superior to those reported previously for InP/Si heteroepitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343011
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Heteroepitaxial growth of InP on GaAs by low-pressure metalorganic chemical vapor deposition (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3209-3211 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial growth of InP on GaAs by low-pressure metalorganic chemical vapor deposition is reported. Trimethylindium-trimethylphosphine adduct was used as the indium source and PH3 as the phosphorus source. From x-ray and scanning electron microscopy examination, excellent crystallinity InP epilayers with specular surface morphology can be grown on (100) GaAs substrates. The composition of this heterostructure was identified by the Auger depth profiles. The electron mobility of the undoped InP epilayer can reach 4700 cm2/V s at room temperature. An evident effect of growth temperature on electron mobility is also demonstrated. Carrier concentration profile shows that the carrier distribution in the epilayer is very uniform. The efficient photoluminescence compared with that of InP homoepitaxy shows that high-quality InP/GaAs heteroepitaxial layers can be obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339321
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...