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  • 1
    Electronic Resource
    Electronic Resource
    Investigation of two plane paralleltiinven ilated jets (1990)
    Springer
    Experiments in fluids 10 (1990), S. 17-22 
    Details
    ISSN: 1432-1114
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Measurements of mean velocity components, mean flow direction, turbulent intensities and Reynolds shear stress were made with a split film probe of hot wire anemometer to investigate the flow field generated by two identical jets of air issuing from plane parallel nozzles in a common end wall and mixing with the ambient room air. Due to the sensitivity of the split film probe to the flow direction, the reverse flow in the converging region was detected by the split film probe and observed by flow visualization. The mean velocity approaches self-preservation in both the converging and the combined regions, while the turbulent intensities and Reynolds shear stress approach self-preservation in the combined region only. The trajectory of the maximum velocity is almost unchanged by variance of nozzle spacing in the converging region. The distance of the merging point from the nozzle exit increases linearly with nozzle spacing. The spread of the converging jet increases more rapidly than that of the combined jet.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00187867
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  • 2
    Electronic Resource
    Electronic Resource
    Measurements of turbulent inclined plane dual jets (1993)
    Springer
    Experiments in fluids 16 (1993), S. 27-35 
    Details
    ISSN: 1432-1114
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Measurements of mean velocities, flow direction, velocity fluctuations and Reynolds shear stress were made with a split film probe of hot wire anemometer to investigate the interactions created by two air jets issuing from two identical plane inclined nozzles. The reverse flow was detected by using the split film probe and observed by flow visualization. Experimental results with an inclined angle of 9° are presented in the paper. Some experimental results with an inclined angle of 27° are presented to investigate the effect of inclination on the flow field. Mean velocities approach self-preservation in both the converging region and the combining region. Velocity fluctuations and Reynolds shear stress approach self-preservation in the combining region only. The spreads of jet and the square of the decay of maximum mean velocity increase linearly as the distance from the nozzle exit increases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00188502
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  • 3
    Electronic Resource
    Electronic Resource
    Heteroepitaxial growth of ZnSe on (111) Si by low-pressure metalorganic chemical vapor deposition (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4241-4243 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe epitaxial layers were successfully grown on (111) Si substrates by low-pressure metalorganic chemical vapor deposition. It is not necessary that the reactant inlet tubes project to near the substrates. From x-ray and scanning electron microscopy examinations, single-crystalline ZnSe epilayers with mirrorlike surfaces can be obtained. The carrier concentration profile shows that the carrier distribution in the epilayer is very uniform. The electron mobility of the epilayer at room temperature is 280 cm2 /V s. The efficient 77-K photoluminescence indicates that the ZnSe epilayers are of good quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341292
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  • 4
    Electronic Resource
    Electronic Resource
    Erratum: Exchange interactions in quantum well subbands [Appl. Phys. Lett. 53, 1931 (1988)] (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 206-206 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102380
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  • 5
    Electronic Resource
    Electronic Resource
    Exchange interactions in quantum well subbands (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1931-1933 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that exchange interactions in the two-dimensional electron gas in quantum wells could cause observable effects on subband energies and intersubband transition energies. In the case of doped quantum wells, the intrasubband exchange interaction can produce an energy shift which is substantially larger than the direct Coulomb energy shift. Theoretical estimates of such shifts are compared with experimental measurements of the infrared photoconductivity of multiple quantum well AlGaAs/GaAs structures with wells doped at about 1018 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100327
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  • 6
    Electronic Resource
    Electronic Resource
    DIFFERENTIAL ACTIONS OF THE MEDIAL REGION OF CAUDAL MEDULLA ON AUTONOMIC NERVE ACTIVITIES (1991)
    Oxford, UK : Blackwell Publishing Ltd
    Clinical and experimental pharmacology and physiology 18 (1991), S. 0 
    Details
    ISSN: 1440-1681
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: 1. The inhibitory effects produced by activation of the medial region of caudal medulla on activities of the left and right cardiac sympathetic, vagus and greater splanchnic nerves were studied in chloralose-urethane anaesthetized cats.2. Electrical stimulation of the medial region produced an 80–92% inhibition of the sympathetic nerve activities, and a 45% and 58% inhibition of the left and right cardiac vagal nerve activities, respectively. There were no significant differences between effects elicited in the left and right autonomic nerves. Similar but smaller inhibitory effects were produced by micro-injection of sodium glutamate (0.5 mol/L) or DL-homocysteic acid (50 mmol/L) to the same medullary sites.3. These data suggest that neurons residing in the medial medullary region exert strong inhibitory effects on autonomic nerve activities. Since the vasculature is principally innervated by sympathetic nerves, inhibition of sympathetic nerve activities might be the principal factor responsible for the depressor effects caused by activation of the medial region of caudal medulla. The heart is innervated both by sympathetic and parasympathetic nerves. Thus, their simultaneous inhibition during activation of the medial region elicits only a weak and variable inhibition of the heart.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1440-1681.1991.tb01392.x
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  • 7
    Electronic Resource
    Electronic Resource
    Growth of YBa2Cu3Oy single crystals from a mixture of YBa2Cu3Oy and Ag2O (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3580-3582 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystals of the superconductor YBa2Cu3Oy have been grown from a mixture of solid phase YBa2Cu3Oy and liquid phase silver. Crystals with a thickness of up to 1 mm along the c axis can be obtained when the mixture is soaked at 1005 °C for more than 8 h. Silver melt enhances the peritectic partial melting of the YBa2Cu3Oy solid phase, and induces the solution and reprecipitation process during sintering at 1005 °C. Stacked plate-like YBa2Cu3Oy grains grow through a coalescence process. Crystals are heavily twinned after 20 h of O2 annealing at 500 °C. They exhibit a sharp superconducting transition with an onset temperature of 93 K in zero field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352915
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  • 8
    Electronic Resource
    Electronic Resource
    Cu spin reorientation in Tl(BaSr)PrCu2O7 : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6568-6570 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Cu spins in TlBa2PrCu2O7 order at TN≈370 K with a spin structure that is collinear and is characterized by the {1/21/21} wave vector, where the nearest neighbor spins are aligned antiparallel along all three crystallographic directions. If 50% of the Ba atoms are randomly replaced by the smaller Sr atoms to form Tl(BaSr)PrCu2O7, the TN of the Cu spins reduces to 350 K but the magnetic structure that forms below TN is the same. However, at T≈20 K the Cu spins undergo a change in structure, and the spin arrangement is then characterized by the {1/21/21/2} wave vector below T≈12 K. The ground state spin structure of the Cu ions in Tl(BaSr)PrCu2O7 is hence noncollinear, where the spin directions of the nearest neighbor Cu ions in the ab plane remain collinear and antiparallel while along the c axis they are orthogonal. These results demonstrate that the atoms in the BaO layers are also actively participating in the coupling between the Cu ions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361883
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  • 9
    Electronic Resource
    Electronic Resource
    Growth and characterization of lattice-matched CaxSr1−xF2 on GaAs(100) (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 875-878 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial growth and characterization of the structural, morphological, interfacial, and electrical properties of lattice-matched Ca0.43Sr0.57F2 on GaAs(100) are reported here. The ∼200 nm films were grown at 500 °C on the GaAs(100) substrates that had been cleaned by annealing at 600 °C. Nomarski optical microscopy, transmission electron microscopy (TEM), scanning electron microscopy, and reflection high-energy electron diffraction results showed that the films were smooth and crackfree, with good crystalline quality. TEM showed evidence of two general types of extended defects in the film which occur at or near the film/substrate interface region. Film resistivity was found to be (3.6±0.75)×1013 Ω cm, and the breakdown field strength was (5.8±1.4)×105 V/cm. However, the breakdown in this case represented a nondestructive conduction process, as opposed to the catastrophic and irreversible change observed in previous studies. The dielectric constant of the films was measured to be 7.43±0.22. Capacitance-voltage measurements indicated that there could be a high density of surface states at the interface that pin the Fermi level within the gap region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339692
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  • 10
    Electronic Resource
    Electronic Resource
    Effects of substrate polishing on double-heterostructure AlyGa1−yAs-AlxGa1−xAs lasers grown by molecular beam expitaxy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 984-986 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented indicating that remnant damage retained beneath the surface of GaAs substrates as a result of polishing has an adverse effect on the performance of semiconductor laser diodes. Deep subsurface damage, observed on the etched/polished substrates provided by the crystal manufacturer, can be removed with an extended etch using a bromine-methanol solution or with a noncontact polishing process developed at ARACOR. Data are shown for laser structures with both GaAs and AlxGa1−xAs active layers, grown by molecular beam epitaxy on substrates prepared to compare the effects of the three polishing techniques. Laser structures grown on substrates prepared by bromine-methanol and noncontact polishing show lower threshold current densities and a marked increase in device uniformity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334705
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