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Heteroepitaxial growth of ZnSe on (111) Si by low-pressure metalorganic chemical vapor deposition (1988)

Lee, M. K. ; Chang, J. H. ; Yeh, M. Y. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 64 (1988), S. 4241-4243

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: ZnSe epitaxial layers were successfully grown on (111) Si substrates by low-pressure metalorganic chemical vapor deposition. It is not necessary that the reactant inlet tubes project to near the substrates. From x-ray and scanning electron microscopy examinations, single-crystalline ZnSe epilayers with mirrorlike surfaces can be obtained. The carrier concentration profile shows that the carrier distribution in the epilayer is very uniform. The electron mobility of the epilayer at room temperature is 280 cm2 /V s. The efficient 77-K photoluminescence indicates that the ZnSe epilayers are of good quality.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.341292

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