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  • 1
    Electronic Resource
    Electronic Resource
    "Designer'' interfaces in II-VI/III-V polar heteroepitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7021-7028 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The development of composite materials incorporating both II-VI and III-V compound semiconductors, such as ZnSe and GaAs, leads to the possibility of a variety of new devices of potential importance to the communications industry. In many cases, such as those involving resonant tunneling junctions and quantum well structures, the quality of the interface between the different compound semiconductors determines the ultimate quality of the device itself. Therefore, we have investigated the factors determining this interface quality for the GaAs/ZnSe system as prepared by molecular beam epitaxy. In this system, the stoichiometry of the substrate is of paramount importance. An excess of one constituent leads to high local electrical fields and poor interface morphology. Optimum growth of ZnSe on GaAs is achieved with GaAs substrate surfaces having a stoichiometry intermediate between the As- and Ga-rich extremes. We will describe a model that defines the conditions for good interface formation and summarize experimental evidence which supports the validity of this model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347641
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    High-quality molecular-beam epitaxial regrowth of (Al,Ga)As on Se-modified (100) GaAs surfaces (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1038-1042 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that high-quality molecular-beam epitaxial (MBE) regrowth of (Al,Ga)As on GaAs can be achieved by chemically passivating the GaAs surface ex situ prior to regrowth with aqueous selenium reagents. Reflection high-energy electron diffraction intensity oscillations show the bidimensional character of the regrowth and high-resolution transmission electron microscopy reveals defect-free regrown interfaces. Photoluminescence intensity from the Se-treated GaAs surfaces on which Al0.5Ga0.5 As is regrown rivals that from an all in situ grown AlGaAs/GaAs interface. The high quality of these regrown interfaces could be attributed to the thermally and chemically stable selenium and oxygen phases that remain bound to GaAs under MBE conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346742
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Growth of InGaAs/InAlAs quantum wells on InP patterned substrates by molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 72-74 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown InGaAs/InAlAs quantum wells and InGaAs, InAlAs single layers over InP nonplanar substrates. Photoluminescence, transmission electron microscopy, and energy-dispersive x-ray analysis give evidence for large lateral thickness and compositional variations, which lead to in situ modification of the growth profile. These effects, which differ for InGaAs and InAlAs, reveal the importance of surface migration in (Al,Ga)InAs. Our results demonstrate a tool for in situ lateral patterning of this material system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102655
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  • 4
    Electronic Resource
    Electronic Resource
    Growth studies of molecular-beam epitaxial ZnSe using reflection high-energy electron diffraction oscillations (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1695-1698 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reflection high-energy electron diffraction (RHEED) intensity oscillations are often used to investigate in situ the growth of III-V materials by molecular-beam epitaxy (MBE). In this work, we have used RHEED oscillations to perform a quantitative study of the growth mechanisms of ZnSe, a II-VI semiconductor. Our experiments illustrate that the RHEED pattern of ZnSe is far less intense than that of III-V materials grown by MBE, and no specular spot is observed over a wide range of growth conditions. We have, however, been able to record up to 25 oscillations allowing a quantitative study of the growth of ZnSe by MBE. Thus we have used RHEED oscillations to make an in situ systematic study of the influence of the three main growth parameters (substrate temperature and Zn or Se impinging fluxes) on the ZnSe growth rate. We observed that the variation of the ZnSe growth rate is due to a nonunity sticking coefficient of both Zn and Se species at the interface in the standard growth conditions used. Our observations can be described using a thermodynamic model and enable us to control the desired growth conditions. Our work demonstrates the utility of RHEED oscillations to understand the MBE growth mechanisms of II-VI compounds.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344388
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    Paper (German National Licenses)
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