ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The Schottky barrier energies for both n-type and p-type materials have been measured for the wide band-gap alloys InGaP and InGaAlP when lattice matched to GaAs. A gold metallization was used and the barrier energy was measured on chemically etched surfaces using conventional current-voltage and photoemission techniques. In the range of alloy composition investigated, the sum of the n-type and p-type barriers was found not to equal the value of the energy gap determined from optical measurements. For InxGa1−x−yAlyP lattice matched to GaAs, the n-type Schottky barrier energy was found to decrease, while the p-type barrier increased, with increasing Al content y.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107621
Permalink