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  • 1
    Electronic Resource
    Electronic Resource
    Hydrostatic pressure studies of an asymmetrically doped resonant tunneling diode (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1548-1552 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study has been made of the effect of hydrostatic pressure on an AlAs/GaAs/AlAs resonant tunneling diode in which the electrodes have been deliberately asymmetrically doped. In reverse bias, current is injected into the structure from a highly doped n+-GaAs electrode and in forward bias from a two-dimensional accumulation layer at the GaAs/AlAs interface. When large hydrostatic pressures are applied at 77 K, regions of negative differential resistance are induced in both bias directions. Current maxima with peak-to-valley ratios as large as 4 have been measured at 8 kbar. The intrinsic asymmetry of the structure aids in the identification of the origins of these features in terms of the X-point conduction-band minima of the device.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349571
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  • 2
    Electronic Resource
    Electronic Resource
    Fabrication and characterization of deep mesa etched "anti''-dot superlattices in GaAs-AlGaAs heterostructures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2960-2962 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By etching a periodic array of holes through a high-mobility two-dimensional electron gas we define a lateral, "anti''-dot-type superlattice with periods a=200 and a=300 nm, much smaller than the electron mean free path in the unpatterned material. The devices are fabricated using electron beam lithography and reactive ion etching techniques, and characterized by magnetotransport experiments. Commensurability effects and the observed quenching of the Hall effect indicate that the electron gas between the etched holes essentially maintains its initial high electron mobility.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104708
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Model of Γ to X transition in thermally activated tunnel currents across AlxGa1−xAs single barriers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3641-3645 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical study of thermally activated currents across AlxGa1−xAs barriers is presented, where x is varied from zero to one. By increasing the Al content, AlxGa1−xAs changes from a direct to an indirect band-gap semiconductor. Previous experiments on activated transport have shown that this crossover strongly affects the transport properties. However, usually these experiments are analyzed in terms of the classical Richardson law, which completely fails to explain the prefactor for high Al concentrations which drops by three orders of magnitude. A model is presented that describes the transport by considering two competing channels, one via the Γ minimum and the other via the longitudinal X minimum. The current flow through each channel is evaluated by calculating the transmission coefficient separately for the Γ and X barriers. This model gives new insights into the interpretation of the experimentally measured activation energy and the prefactor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348511
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  • 4
    Electronic Resource
    Electronic Resource
    Novel far-infrared-photoconductor based on photon-induced interedge channel scattering (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2231-2233 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate experimentally that the far-infrared photoresponse of GaAs/AlGaAs heterostructures at photon energies corresponding to cyclotron resonance absorption is strongly enhanced in the adiabatic transport regime of the quantum Hall effect (QHE). Ideal adiabatic transport is characterized within the edge channel picture of the QHE by the absence of interedge channel scattering. We realize adiabatic transport by the means of a multiple gate finger structure, which is used for a selective population of the edge channels. The cyclotron resonance absorption is interpreted as an additional interchannel scattering process increasing the magnetoresistance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104935
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  • 5
    Electronic Resource
    Electronic Resource
    Photoconductive switches for time-resolved transport measurements at low temperatures and high magnetic fields (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3752-3754 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-semiconductor-metal photodiodes were optimized as pulse generators for time-resolved electrical measurements at low temperatures and high magnetic fields, using a laser diode as the light source. For the photoconductor, a heterostructure consisting of high-quality GaAs and low-temperature grown GaAs was used. The dependence of the photocurrent pulses on the applied magnetic field was determined. A two-dimensional electron gas in a magnetic field served as the device under test for the time-resolved measurements. We observed a splitting of the incident pulse into two transmitted pulses resulting from modal dispersion in the two-dimensional electron gas. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115995
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  • 6
    Electronic Resource
    Electronic Resource
    Photon-assisted tunneling through a quantum dot at high microwave frequencies (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3924-3926 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the influence of high frequency microwave radiation on single electron tunneling through a quantum dot. Effective coupling of the radiation to the quantum dot is achieved by an on-chip integrated broadband antenna. Simulations of the current distribution on the antenna are shown. We find that radiation with a frequency of ν=155 GHz, which corresponds to half of the bare charging energy Ec/2 results in an additional conductance peak within the Coulomb blockade regime. This additional resonance is attributed to photon-assisted tunneling. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114406
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  • 7
    Electronic Resource
    Electronic Resource
    Fabrication and characterization of micromagnet arrays on top of GaAs/AlGaAs heterostructures (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1441-1443 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using nanolithographic techniques we deposit an array of ferromagnetic dysprosium dots with period a=500 nm on top of GaAs–AlGaAs heterojunctions. The spatially periodic stray fields affect drastically the magnetotransport properties of the electrons in the underlying two-dimensional electron gas and give rise to the long predicted magnetic commensurability oscillations. We show that such a semiconductor-ferromagnet hybrid system can be used to study the magnetic properties of nanoscale particles. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114520
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  • 8
    Electronic Resource
    Electronic Resource
    Temperature-insensitive offset reduction in a Hall effect device (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3121-3123 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A double current technique applied to a double boundary device produces dual boundary specific Hall effects even above room temperature. It is shown that current compensation allows in situ cancellation of the offset voltage in the Hall effect, originating from effective contact misalignments. Thus, this method reduces the temperature-dependent offset originating from the T dependence of the resistance, and improves the sensitivity of the Hall element to the external magnetic field. Possible applications such as field sensing elements, contactless switches, and position sensors are cited.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111974
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  • 9
    Electronic Resource
    Electronic Resource
    Quantum wires prepared by liquid-phase-epitaxial overgrowth of dry-etched AlGaAs-GaAs heterostructures (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2998-3000 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a technique to overgrow deep-mesa-etched AlGaAs-GaAs quantum wires with AlGaAs by liquid-phase epitaxy and achieve improved interfacial properties. In particular, we find a significant reduction of the surface-state density and related lateral edge depletion in modulation-doped quantum wires. We demonstrate the formation of a quasi-one-dimensional electron system by far infrared spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106788
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  • 10
    Electronic Resource
    Electronic Resource
    Hall effect under null current conditions (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1262-1264 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In a double boundary geometry, it is shown that dual independent Hall effects may be realized simultaneously by injecting two currents into the device, and the Hall effect on each boundary reflects only the current injected via the same boundary. A study of the magnetoresistance shows, however, that branch dissipation may be reduced through the optimal orientation of the injected currents. The results help clarify the signature edge currents in experiment by demonstrating that a Hall effect may be generated under null (net) current conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110859
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