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  • 1
    Electronic Resource
    Electronic Resource
    Conditions for uniform growth of GaAs1−xPx superlattices (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1206-1208 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonplanar morphology and compositional inhomogeneity are observed in GaAs1−xPx superlattices when the phosphorus content is substantially different in adjacent sublayers. The main characteristic feature of the distortion is a series of ribbonlike regions running through the superlattice which etch at a faster rate and contain more phosphorus than the surrounding material and are also the source of clusters of dislocations. Morphological stability and a general decrease in dislocation density can be effected by decreasing the interlayer strain, i.e., compositional difference, between the superlattice sublayers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337365
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  • 2
    Electronic Resource
    Electronic Resource
    High-efficiency indium tin oxide/indium phosphide solar cells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2674-2676 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Improvements in the performance of indium tin oxide/indium phosphide (ITO/InP) solar cells have been achieved by using dc magnetron sputter deposited n-ITO onto an epitaxial p/p+ structure grown on good quality commercial p+ bulk substrates. The composition of the sputtering gas has been investigated and the highest efficiency cells resulted when the surface of the epilayer was exposed to an Ar/H2 plasma before depositing the bulk of the ITO in a more typical Ar/O2 plasma. With H2 processing, record efficiencies of 18.9% global, 1000 W m−2, 25 °C (17.0% air mass zero) were achieved. Without H2 processing, the devices exhibited lower efficiencies and were unstable. Type conversion of the InP was shown to occur and was established as being associated with the ITO (possibly due to Sn donors) rather than sputter damage. These improvements in performance have resulted from the optimization of the doping, thickness, transport, and surface properties of the p-type base, as well as from better control over the ITO deposition procedure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101363
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  • 3
    Electronic Resource
    Electronic Resource
    Recombination lifetimes in undoped, low-band gap InAsyP1−y/InxGa1−xAs double heterostructures grown on InP substrates (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1092-1094 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality, thin-film, lattice-matched (LM) InAsyP1−y/InxGa1−xAs double heterostructures (DHs) have been grown lattice mismatched on InP substrates using atmospheric-pressure metalorganic vapor-phase epitaxy. The low-band gap InxGa1−xAs layers in the DHs have room-temperature band gaps that range from 0.47 to 0.6 eV. Both the optical and electronic properties of these films have been extensively measured. The band-to-band photoluminescence is quite strong and comparable to that found for LM InP/In0.53Ga0.47As DHs grown on InP. Recombination lifetime measurements of undoped DH structures show minority-carrier lifetimes in excess of 1 μs in most cases. The earlier properties make the band gap-flexible InAsyP1−y/InxGa1−xAs DH system attractive for applications in high-performance, infrared-sensitive devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1350432
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  • 4
    Electronic Resource
    Electronic Resource
    Recombination lifetime of In0.53Ga0.47As as a function of doping density (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3470-3472 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated devices with the structure InP/In0.53Ga0.47As/InP, with a InGaAs doping range varying from 2×1014 to 2×1019 cm−3. These isotype double heterostructures were doped both n and p type and were used to measure the minority-carrier lifetime of InGaAs over this doping range. At the low doping end of the series, recombination is dominated by the Shockley–Read–Hall effect. At the intermediate doping levels, radiative recombination is dominant. At the highest doping levels, Auger recombination dominates as the lifetime varies with the inverse square of the doping concentration. From fitting these data, the radiative- and Auger-recombination coefficients are deduced. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121669
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  • 5
    Electronic Resource
    Electronic Resource
    Atomic ordering and temperature-dependent transient photoconductivity in Ga0.47In0.53As (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3534-3536 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Influences of CuPtB atomic ordering on transient photoconductivity in epitaxial Ga0.47In0.53As films grown by metal-organic chemical vapor deposition are examined. Low-injection lifetimes of several ms are measured in double-variant ordered samples at 77 K; these lifetimes decrease rapidly with temperatures above 180 K, giving a thermal activation energy for recombination of 0.19 eV. Single-variant ordered samples exhibit typical lifetimes of 30–60 μs, with no noticeable temperature dependence up to 300 K. Charge separation in double-variant samples may be driven by a type-II band alignment between ordered and disordered regions, or by an alternating internal electrical polarization between ordered variants. Recombination in both double- and single-variant samples may be influenced by inhibited transport across antiphase boundaries. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124152
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  • 6
    Electronic Resource
    Electronic Resource
    Auger recombination in low-band-gap n-type InGaAs (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3272-3274 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured the recombination lifetime of degenerate n-InxGa1−xAs for three different compositions that correspond to x=0.53, 0.66, and 0.78 (band gaps of 0.74, 0.60, and 0.50 eV, respectively) over the doping range of 3×1018–5×1019 carriers/cm3. The Auger recombination rate increases slowly with decreasing band gap, and it matches the behavior predicted for phonon-assisted recombination. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1418032
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  • 7
    Electronic Resource
    Electronic Resource
    25.2% efficiency (1-sun, air mass 0) AlGaAs/GaAs/InGaAsP three-junction, two-terminal solar cell (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1691-1693 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A 25.2% efficiency measured under 1 sun, air mass 0 illumination has been achieved in a two-terminal AlGaAs/GaAs/InGaAsP three-junction solar cell. The cascade cell consists of a monolithic AlGaAs (Eg=1.93 eV)/GaAs two-junction mechanically stacked on an InGaAsP (Eg=0.95 eV) single-junction cell. The component cell of the AlGaAs/GaAs two-junction structure were electrically connected using a metal interconnect fabricated during post-growth processing. To minimize the obscuration effect introduced by the grid lines and metal interconnect, a prismatic cover glass was bonded to the AlGaAs/GaAs cascade cell. The results obtained with this structure represent the highest 1-sun, air mass 0 efficiency achieved in any solar cell operating under a two-terminal configuration. The implications of achieving this high efficiency in a two-terminal, three-junction solar cell for terrestrial and space applications are described as well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107213
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