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  • 1
    Electronic Resource
    Electronic Resource
    Surface chemical processes in metal organic molecular-beam epitaxy; Ga deposition from triethylgallium on GaAs(100) (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4053-4063 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The adsorption of triethylgallium on the GaAs (100) (4×1) surface has been studied using the techniques of low energy electron diffraction, x-ray photoelectron and Auger spectroscopies, high resolution electron energy loss spectroscopy and temperature-programmed desorption. Condensed multilayers of the organometallic compound formed following adsorption at 150 K desorb from the surface at ∼170 K to leave a chemisorbed molecular monolayer of triethylgallium. Upon further heating this layer partially desorbs and partially decomposes to form diethylgallium in two competing processes. The diethylgallium so formed can also desorb or otherwise decompose ultimately to adsorbed Ga atoms in a reaction which results in the formation of hydrogen, ethene, and ethane. The temperature-programmed desorption characteristics of these latter species are found to be similar to those observed for a dissociated layer of ethyl bromide. A reaction scheme is proposed to account for the observations and kinetic parameters are obtained from computer modeling of the temperature-programmed desorption results. The reaction scheme is also used to evaluate the temperature-dependent growth rate expected in metal organic molecular beam epitaxial growth of GaAs. Comparison with experimental results is made and the work is discussed in the light of the previous model which has been proposed for the epitaxial growth of GaAs by metal organic molecular-beam epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346242
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of annealing temperature on ferroelectric properties of SrBi2Ta2O9 thin films prepared by off-axis radio frequency magnetron sputtering (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5928-5934 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric SrBi2Ta2O9 (SBT) thin films were deposited on Pt/TiOx/SiO2/Si substrates using the off-axis radio frequency magnetron sputtering technique. X-ray diffraction and atomic force microscopy experiments showed that the crystallization of SBT thin films at 〉700 °C correlated with the formation of rod-like grains. Cross-sectional field emission scanning electron microscopy images revealed that the apparent thickness of SBT decreased while the thickness of Pt increased as the annealing temperature was increased. The apparent decrease in the thickness of SBT was attributed to crystallization and densification in the film whereas the apparent increase in Pt thickness was due to diffusion of Ti and Bi into the Pt layer. This diffusion at high annealing temperatures (800 °C and above) alters the Pt purity and degrades the Pt as the bottom electrode for the ferroelectric capacitor. Good insulating properties were obtained when the SBT film was annealed at 700 and 750 °C whereas higher leakage currents were observed at annealing temperatures 〉800 °C. A remnant polarization (Pr) of 4.35 μC/cm2 and coercive field (Ec) of 31.5 kV/cm were obtained for the SBT thin film annealed at 750 °C with a leakage current density of 〈10−7 A/cm2. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1317240
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  • 3
    Electronic Resource
    Electronic Resource
    The interaction between carbon monoxide and yttrium barium copper oxide, YBa2Cu3Ox, as studied by TG/DTA, FTIR, and XPS (1993)
    s.l. : American Chemical Society
    Inorganic chemistry 32 (1993), S. 3093-3098 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic00066a021
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  • 4
    Electronic Resource
    Electronic Resource
    Argon incorporation and surface compositional changes in InP(100) due to low-energy Ar+ ion bombardment (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6655-6660 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Angle-resolved x-ray photoelectron spectroscopy (ARXPS) has been used to study the Ar incorporation and surface compositional changes in InP(100) after 1–5 keV Ar+ bombardment at various ion fluences. The ARXPS measurements showed that the incorporated Ar concentration achieved saturation at ion bombardment fluences of 〉1016 cm−2. The surface Ar concentration decreased with increasing bombardment energy. No Ar bubbles were observed by atomic force microscopy, suggesting that Ar bubble formation was not the main Ar trapping mechanism. The altered layers were, on average, In rich up to the sampling depth of the ARXPS technique. However, the altered layers were inhomogeneous as a function of depth and appeared more In rich at the surface than in the subsurface region. The results are compared with those obtained by other authors and discussed in the context of preferential sputtering, radiation-enhanced diffusion and segregation, and Ar incorporation. Although the altered layers were In rich, a P-rich phase induced by Ar+ bombardment was identified in the altered layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363789
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  • 5
    Electronic Resource
    Electronic Resource
    Argon incorporation and silicon carbide formation during low energy argon-ion bombardment of Si(100) (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2934-2941 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Argon incorporation and the formation of silicon carbide in Si(100) by low energy Ar+ ion bombardment have been studied by angle-resolved x-ray photoelectron spectroscopy (XPS). The bombardment was performed at ion energies of 1, 1.5, and 2 keV and various ion fluences in an ultrahigh vacuum chamber equipped with XPS. The XPS measurements showed that the incorporated Ar concentrations achieved saturation in the near-surface region at ion bombardment fluences (approximately-greater-than)1016 cm−2. The surface Ar concentrations decreased with increasing bombardment energy. No Ar bubbles on the surface of Ar+-bombarded samples were observed by atomic force microscopy under these experimental conditions suggesting that Ar bubble formation was not the main Ar trapping mechanism in our study. The SiC formation was confirmed by characteristic XPS peaks of Si 2p and C 1s for SiC. The carbide formed at lower ion fluence was of a metastable structure as inferred by XPS. Bombardment at higher ion fluence yielded a stable carbide phase through continuous ion beam mixing. No strong dependence of carbide depth distribution on bombardment energy was observed suggesting that the carbide phase is probably dispersed inside the bombarded layer and that carbon is bonded to silicon at localized defect sites. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361289
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  • 6
    Electronic Resource
    Electronic Resource
    Correlations between CdTe/CdS/SnO2/glass solar cell performance and the interface/surface properties (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2151-2153 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface and interface properties of CdTe/CdS/SnO2/glass heterojunction solar cells are studied by means of x-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), and optical reflectance (OR) techniques. First, n-type CdS layer was grown by solution growth technique on the SnO2 coated glass substrate and then the p-type CdTe was deposited on CdS by metal-organic chemical-vapor deposition. Despite many other efficiency limiting mechanisms in CdTe solar cells, this article shows that surfaces and interfaces play an important role in determining the cell efficiency. In an attempt to correlate the surface and interface properties to the cell performance, a series of CdTe/CdS solar cells with different conversion efficiencies were fabricated and analyzed. It was found that high efficiency cells possess Te-rich CdTe surface along with smooth interfaces, as revealed by XPS, SIMS, and OR measurements, while low efficiency cells display near stoichiometric or Cd-rich CdTe surface and abrupt interfaces. The impact and role of interface/surface properties on CdTe solar cell performance are discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361041
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  • 7
    Electronic Resource
    Electronic Resource
    Electric field-induced carbon nanotube junction formation (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 260-262 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present experimental evidence of nanojunction structures explicitly observed after application of high electric fields on multiwall carbon nanotube arrays. The electric field as well as thermal effects result in carbon–carbon bond breaking and redeposition leading to nanojunction formation. The growth mechanism of the nanojunction is believed to be open-ended topological defect growth in which carbon atoms at two adjacent nanotube tips chemically react and fuse forming an array of nanojunctions. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1383279
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  • 8
    Electronic Resource
    Electronic Resource
    Trends in bonding configuration at SiC/III–V semiconductor interfaces (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1643-1645 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and electronic properties of interfaces between β-SiC and III–V semiconductors are studied by first-principles calculations. Favorable bonding configurations are found to form between Si–V and C–III (model A) for BN, AlN, AlP, AlAs, GaN, GaP, GaAs, InN, InP, InAs, and InSb, and Si–III and C–V (model B) for BP, BAs, BSb, AlSb, and GaSb. The relationship between the formation energy difference and lattice constant difference, as well as the charge distribution, for these two models is found. The origin of bonding configurations can be explained in terms of the ionicity of III–V semiconductors, electrostatic effect, charge distribution, and band-structure component. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402162
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  • 9
    Electronic Resource
    Electronic Resource
    Dynamics of optical nonlinearity of Ge nanocrystals in a silica matrix (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3926-3928 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical nonlinearity and excited carrier lifetime in Ge nanocrystals (nc-Ge) embedded in a silica matrix have been investigated by means of single beam z scan and pump-probe techniques with laser pulse duration of 35 ps and 532 nm wavelength. The nc-Ge samples were prepared using magnetron cosputtering and postgrowth annealing at 800 °C. The nonlinear absorption coefficient α2 and refractive index n2 were found to range between 190 and 760 cm/GW, and 0.0026 and 0.0082 cm2/GW, respectively, and be proportional to the Ge concentration in the film. The confined excited carriers were found to depopulate with a lifetime of ∼70 ps. The nonlinearity in Ge nanocrystals is deduced to originate mainly from excited carrier absorption, with two-photon absorption providing a small contribution. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1330569
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  • 10
    Electronic Resource
    Electronic Resource
    Compositional mapping of the argon–methane–hydrogen system for polycrystalline to nanocrystalline diamond film growth in a hot-filament chemical vapor deposition system (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2692-2694 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transition in diamond crystal morphology from well-faceted microcrystalline to nanocrystalline phases as a function of increasing argon (Ar) concentration has been studied in a hot-filament chemical vapor deposition (HFCVD) system. The range of Ar concentration in a Ar–methane–hydrogen mixture that permits well-faceted diamond growth is up to 90%. At a concentration of 95.5%, a marked transition into nanocrystalline diamond phase could be observed. Although no graphitic phases were observed by transmission electron microscope and x-ray diffraction up to 95.5% Ar concentration, Raman analyses revealed a proportionate increase in amorphous carbon content with an increase in Ar concentration. The addition of Ar appears to create an electron-rich gas environment because a plasma can be readily discharged by applying a bias to the sample. Analysis of the plasma by optical emission spectroscopy revealed a linear correlation between Ar addition and the occurrence of C2 dimers in the plasma. Our results identified the narrow Ar-methane-hydrogen composition window that is effective for the growth of thick and smooth nanocrystalline diamond in HFCVD. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1320039
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