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  • 1
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    Associations of postoperative mortality with the time of day, week and year (2018)
    Details
    Publication Date: 2023-07-17
    Language: English
    Type: article , doc-type:article
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    OPUS
  • 2
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    Associations of postoperative mortality with the time of day, week and year (2018)
    Details
    Publication Date: 2023-07-17
    Language: English
    Type: article , doc-type:article
    Library Location Call Number Volume/Issue/Year Availability
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    OPUS
  • 3
    Electronic Resource
    Electronic Resource
    Regional Distribution of Calmodulin Activity in Rat Brain (1985)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 44 (1985), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: Calmodulin activity in 68 discrete areas of rat brain, obtained by micropunch technique, was assessed by its capacity to activate a calmodulin-sensitive form of phosphodiesterase. In general, the activity of calmodulin was higher in the telencephalon, limbic system, and hypothalamus than in the mesencephalon, pons, cerebellum, and medulla. However, there were substantial differences in calmodulin activity in discrete nuclei of each region. The regional distribution of calmodulin activity in rat brain does not appear to correlate with that of any of the known putative neurotransmitters or peptides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-4159.1985.tb08809.x
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  • 4
    Electronic Resource
    Electronic Resource
    Characteristics of surface acoustic wave propagation in III-V semiconductor quantum well structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5002-5007 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The propagation of surface acoustic waves (SAWs) in AlGaAs/GaAs and InGaAs/InP quantum well structures is modeled using a Laguerre polynomial approach to determine the effects of the quantum well parameters (layer thickness, layer composition, and number of layers) on the induced potential, electric field, particle displacement, and strain. These characteristics show that variations of the electric field within regions of the structure of interest for device applications can be brought about, and are of use for the design of devices based on SAW interactions in quantum well structures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359726
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Photosensitivity of proton implanted germania-doped planar silica structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1207-1210 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are presented which demonstrate that an absorption peak at a wavelength of 240 nm is produced in germania-doped planar silica structures by the implantation of a dose of 1×1017 cm−2 300 keV protons into a sample heated to 800 °C. This proton implantation induced absorption was found to saturate for a total implanted dose of 1×1017 protons cm−2 and the effect did not increase when multiple energy implants with a dose of 1×1017 protons cm−2 were used. The 240 nm absorption peak was partially removed by exposure to 0.5 J, 10 ns, 249 nm laser pulses for 7 min using a pulse repetition frequency of 50 Hz. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358987
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of nanocrystallites in porous p-type 6H-SiC (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4045-4049 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the formation of porous p-type 6H-SiC. The existence of uniformly dispersed pores was confirmed by transmission electron microscopy, with interpore spacings in the range of 1–10 nm. The porous film as a whole is a single crystal. Luminescence peaks above the normal band gap of 6H-SiC have been observed in the porous layer, but were not distinguished in the bulk SiC substrate. Quantum confinement is discussed as a possible mechanism for the luminescence effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357352
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  • 7
    Electronic Resource
    Electronic Resource
    Interaction of Ni90Ti10 alloy thin film with 6H-SiC single crystal (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 167-173 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial reactions, phase formation, microstructure, and composition, as functions of heat treatments (400–800 °C) were investigated in Ni90Ti10 alloy thin film coevaporated on an n-type 6H-SiC (0001) single-crystal substrate. The study was carried out with the aid of Auger electron spectroscopy, x-ray diffraction, and analytical transmission electron microscopy. The interaction was found to begin at 450 °C. Ni and C are the dominant diffusing species. The reaction zone is divided into three layers. In the first layer, adjacent to the SiC substrate, the presence of Ni-rich silicide, Ni2Si, and C precipitates, was observed. The second layer is composed mainly of TiC, while the third consists of Ni2Si. This composite structure, consisting of the silicide as a low resistivity ohmic contact, and of the carbide as a diffusion barrier, promises high-temperature stability crucial to ohmic contact development for SiC technology. Factors controlling phase formation in the Ni–Ti/SiC system are discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362801
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  • 8
    Electronic Resource
    Electronic Resource
    Crystallization and growth of Ni-Si alloy thin films on inert and on silicon substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3791-3798 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallization kinetics and thermal stability of NiSi2±0.2 alloy thin films coevaporated on two different substrates were studied. The substrates were: silicon single crystal [Si(100)] and thermally oxidized silicon single crystal. In situ resistance measurements, transmission electron microscopy, x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy were used. The postdeposition microstructure consisted of a mixture of amorphous and crystalline phases. The amorphous phase, independent of the composition, crystallizes homogeneously to NiSi2 at temperatures lower than 200 °C. The activation energy, determined in the range of 1.4–2.54 eV, depends on the type of the substrate and on the composition of the alloyed films. The activation energy for the alloys deposited on the inert substrate was found to be lower than for the alloys deposited on silicon single crystal. The lowest activation energy was obtained for nonstoichiometric NiSi2.2, the highest for NiSi2—on both substrates. The crystallization mode depends on the structure of the as-deposited films, especially the density of the existing crystalline nuclei. Substantial differences were observed in the thermal stability of the NiSi2 compound on both substrates. With the alloy films deposited on the Si substrate, only the NiSi2 phase was identified after annealing to temperatures up to 800 °C. In the films deposited on the inert substrate, NiSi and NiSi2 phases were identified when the Ni content in the alloy exceeded 33 at. %. The effects of composition and the type of substrate on the crystallization kinetics and thermal stability are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358554
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of Ge concentration on the propagation characteristics of SiGe/Si heterojunction waveguides (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2254-2257 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The variation of the modal propagation loss of planar SiGe/Si heterojunction waveguides with Ge concentrations ranging from 1.3% to 10% has been determined for both TE and TM polarizations at wavelengths of 1.15 and 1.523 μm. The results show that at 1.15 μm wavelength the propagation loss increases with increasing Ge concentration due to the band-edge absorption, which dominates the waveguide loss characteristics, while at the wavelength of 1.523 μm it decreases with increasing Ge concentration. The polarization sensitivity is only found at the longer wavelength and is thought to be due to the interaction of the evanescent field at the SiGe/Si interface with the Si substrate. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359573
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  • 10
    Electronic Resource
    Electronic Resource
    Analysis of phase shifts due to etching in photoreflectance spectra of a GaAs/AlGaAs single-quantum well structure (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2672-2678 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature photoreflectance measurements of a GaAs/Al0.2Ga0.8As single-quantum well structure showed well defined Franz–Keldysh oscillations in the neighborhood of the GaAs and Al0.2Ga0.8As band-edge energies. That experiment investigated the origin of the Franz–Keldysh oscillations by sequential etching and photoreflectance analysis of the grown layers and showed that the phase of the Franz–Keldysh oscillations shifted as the upper Al0.2Ga0.8As barrier was etched, with eventual phase reversal when roughly half of the upper barrier was removed. Here, these phase shifts are determined accurately using a novel Kramers–Kronig approach and they are interpreted in terms of optical interference effects using both a simple two-ray model and a multiple-reflection treatment incorporating a calculation of the Seraphin coefficients. The results also enable the thickness of the layers removed to be determined. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358734
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