Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Fe reactions with β-SiC (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5299-5302 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reaction between β-SiC and a layer of sputter deposited Fe has been investigated by Auger profiling. The samples were vacuum annealed in the analysis chamber up to 800 °C. After a 610 °C anneal an interfacial layer of iron carbide appeared, probably the result of a reaction between the Fe and an adsorbed layer of hydrocarbons. This interfacial layer appears to prevent a reaction with the substrate until the temperature is raised to 800 °C. At this temperature a rapid and violent reaction occurs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338932
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Effects of N2, O2, and H2O on GaAs passivated by photowashing or coating with Na2S⋅9H2O (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3287-3289 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence (PL) from the surface region of GaAs passivated by photowashing or coating with Na2S⋅9H2O is shown to be sensitive to the gas ambient. Both water vapor and oxygen must be present in order to obtain a large PL signal. The effects are activated by the measuring laser light.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341519
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    High-pressure thermal oxidation of InP in steam (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 506-509 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal oxidation of InP in dry oxygen has previously been shown to result in mixed oxide layers, even when grown at pressures as high as 500 atm. This appears to be caused by the slow diffusion of P and O2 through the oxide relative to In. This paper reports on the oxidation of InP in steam at one and 500 atm. Growth in one atm yields an oxide with a composition very similar to those grown in dry oxygen, indicating similar growth kinetics. However, at 500 atm of steam the growth kinetics are changed dramatically and result in a uniform InPO4 layer, suggesting that at high pressure, the H2O diffuses rapidly to the oxide-InP interface where the oxidation reaction occurs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340271
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Photoenhanced thermal oxidation of InP (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 637-642 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth rate of laser-photoenhanced thermally grown native oxides of InP in a N2O ambient and its dependence on growth condition are presented. Increased laser power, substrate temperature, and N2O pressure are observed to increase the growth rate. The topography and the composition of these oxides have been studied, using secondary electron microscopy and x-ray photoemission spectroscopy, respectively. The oxide layers contain In2O3 and a phosphate, probably InPO4. The enhanced growth appears to be caused by both excited oxidizing species and a photon-enhanced surface reaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334756
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Ultrahigh frequency oscillations and multimode dynamics in vertical cavity surface emitting lasers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 185-187 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of ultrahigh frequency oscillations of up to 240 GHz in optically gain switched vertical cavity surface emitting lasers. These oscillations are shown to be produced by multimode emission through mode competition (10–30 GHz) or mode beating (above 100 GHz). Although these oscillations are not related to the intrinsic modulation bandwidth, some of them could be mistaken for relaxation oscillations, calling for careful interpretation of the results of this type of experiments. The highest frequencies observed for single mode relaxation oscillations were about 9 GHz in agreement with values of modulation bandwidth reported in the literature. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114661
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Reaction between SiC and W, Mo, and Ta at elevated temperatures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2796-2800 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stability of W, Mo, and Ta in contact with single-crystal β-SiC at elevated temperatures has been investigated using Auger sputter profiling. All three metals were found to form a thin-mixed layer of metal carbide and silicide upon metal deposition at room temperature. This layer is thought to be the result of surface defects which weaken the Si—C bonds and allow a low-temperature reaction to occur. Upon heating, the Ta readily reacts with the SiC substrate and forms a mixed layer of Ta carbide and silicide at annealing temperatures as low as 400 °C, however, the W/SiC and Mo/SiC systems are stable and change very little after annealing at 850 and 800 °C, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346457
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Structure and chemical composition of water-grown oxides of GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1863-1867 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Previously it has been shown that the electronic surface properties of GaAs can be improved by photochemical treatment in water. If this photowashing technique is carried out with intense white light, oxides several hundred angstroms thick can be grown. This paper reports the structure and composition of this photowashed oxide and one grown by soaking in stagnant water in low light. The oxide was determined by TEM cross sections to be highly porous, but with thin continuous oxide layers both at the surface and at the oxide/GaAs interface. The oxide is composed of Ga2O3 with a low concentration of As2O3. The layer is primarily a fine grain Ga oxide crystal with a structure which appears different from the common forms of Ga2O3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345614
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Transverse mode dynamics in vertical cavity surface emitting lasers excited by fast electrical pulses (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 590-592 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report measurements of the transient multimode dynamics of vertical cavity surface emitting lasers excited by short (100–200 ps rise times, 1 ns duration) electrical pulses. Fast changes on the spatial distribution of the output power and strong mode competition are observed. Numerical simulations show that the observed dynamics are due to the partial overlap of the different transverse modes through spatial hole burning. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116477
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Linewidth and α-factor in AlGaAs/GaAs vertical cavity surface emitting lasers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 277-279 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the α-factor, the linewidth-power product, and the differential gain in AlGaAs/GaAs vertical cavity surface emitting lasers are presented. The linewidth power product of 95 MHz mW which results in the α-factor of 3.7 is obtained. The α-factor as a ratio of the refractive index and gain derivatives with respect to the carrier density is also estimated. From the small signal modulation measurements of the resonance frequency, a differential gain of 3.7×1016 cm2 is obtained. The estimate of differential effective index is made difficult by an anomalously strong dependence of the emission wavelength on injection current. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113516
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Two wavelength optically controlled latch and AND gate (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 636-638 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new optical device which functions either as a gated latch or an AND gate is demonstrated. This device utilizes two different wavelengths of input light and is composed of two heterojunction phototransistors (HPTs) vertically integrated with a light emitting diode. The collector-base regions of the two HPTs are fabricated from different band-gap materials and thus, respond to different wavelengths of input light. The device structure was fabricated from InGaAsP/InP epitaxial layers grown by gas source MBE. The gated latch and AND gate are shown to have an on/off contrast ratio of 12 and 6, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107831
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...