Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
53 (1988), S. 1626-1628
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Hydrogen in undoped, unalloyed microcrystalline silicon (μc-Si:H) has been investigated with secondary-ion mass spectrometry (SIMS), Raman spectroscopy, infrared absorption spectroscopy, and nuclear magnetic resonance (NMR). The samples were grown by plasma-enhanced chemical vapor deposition with hydrogen to silane dilution ratios (H2:SiH4) ranging from 0:1 to 98:1. Microcrystallinity is obtained for dilution ratios of 20:1 and greater. The hydrogen concentration is shown to depend nonmonotonically on the degree of hydrogen dilution. The H concentration in the films decreases with dilution for ratios from 0:1 to 10:1 and then increases with greater dilution. This dependence on dilution is established with both NMR and SIMS and suggests the existence of competing processes in the incorporation of hydrogen during deposition. It is further observed that the formation of microcrystallites is accompanied by the appearance of both higher order silicon hydrides and large concentrations of unbound molecular hydrogen.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99932
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