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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4594-4598 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Studies of grain structure, size, distribution, and geometric arrangement are gaining importance especially from the point of view of thin-film interconnects for micron and submicron semiconductor technologies. We have studied the effect of annealing on the grain growth characteristics of pure Al films. As-deposited films exhibit a uniform grain size distribution between 500 and 800 A(ring). With heat treatment, the average grain size increases with the largest grains exhibiting a parabolic growth with time, limited to a size in the neighborhood of 1 μ. Smaller grains, however, cannot be eliminated and about 30% of the grains are less than 2500 A(ring) across. The grain boundaries of the smaller grains have a higher oxygen content than the rest of the film. Lines defined by liftoff exhibit a characteristic grain boundary seam along the length of the line. The implications of the above study in terms of processibility and reliability with respect to electromigration are also discussed.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7062-7064 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent studies found that the (Pt/Co/Pt) trilayers can be used as a unit in combination with nonmagnetic or magnetic layer, X (X=Pd, Ag, Cu, and Ni), to enhance the perpendicular magnetic anisotropy of the films, reduce the Curie temperature, and alter the magneto-optical properties. The effects of intercalating Cr into Pd/Co multilayers on the magnetic and magneto-optical properties are studied in this article. The perpendicular magnetic anisotropy Ku and the coercivity Hc of the system decrease rapidly with increasing the Cr thickness (XCr) up to 0.4 nm, and change slightly when Cr thickness further increases. The dependence of the coercivity Hc on the Cr thickness, which obeys the law: Hc (XCr)=XCr−2.66, indicates that the magnetization reversal is controlled by domain wall moving, mainly due to the interface roughness. Large decrease of the Kerr rotation θk of the Pd/Cr/Co multilayers compared with pure Pd/Co multilayers is also found in the wavelength ranging from 200 to 800 nm. As it is well known, the large anisotropy and Kerr rotation in Pd/Co system are mainly caused by the polarization of Pd atoms due to nearby Co atoms. As the intercalating of Cr layer between Pd and Co layer, the average polarization of Pd atoms will be reduced largely. As a matter of fact, the Cr atoms can also be polarized by nearby Co atoms, which, however, seems to take a minor effect on the anisotropy and Kerr rotation of the system. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 102 (1995), S. 0 
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2275-2279 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstucture of metastable C49-TiSi2 was studied by high-resolution transmission electron microscopy in a bilayer thin film of Ti and Si annealed at 700 °C. Large grains (300–400 nm) of C49-TiSi2 phase with high density of stacking faults on (010) planes were observed. A preferred orientation among the C49-TiSi2 grains was identified, and the grains were aligned along the [010] with slight misorientation. The diffraction pattern from the metastable TiSi2 showed continuous streaks superimposed by discrete spots along hk0 reciprocal lattice rows, indicating the presence of polytypism. Lattice imaging of polytypic TiSi2 has been obtained and it showed that the structure is nonperiodic and one dimensionally disordered due to the stacking faults. The finding of metastable TiSi2 associated with polytypism suggests that its structure could be conveniently represented by various stackings of atomic planes along the [010] direction. An atomic model is proposed to explain the origin of polytypism. It is shown that the arrangement of atoms in C49-TiSi2 structure has four equivalent positions.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 131-136 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Alignment of undoped polycrystalline silicon deposited on 〈100〉 single-crystal silicon is known to occur for temperatures higher than 1000 °C. In this paper we provide evidence of a greatly enhanced epitaxy occurring in the polycrystalline silicon film after arsenic ion implantation, which amorphizes the surface layer of this film, followed by rapid thermal processing. The significantly enhanced epitaxy over that of undoped polycrystalline silicon is attributed to the mechanisms of solid phase epitaxial growth of the amorphized surface layer and alignment and realignment and coalescence, which are thought to be enhanced by arsenic segregation to the film grain boundaries and its interface with the silicon substrate via grain boundary diffusion. During this rapid epitaxy the arsenic atoms distribute themselves throughout the film, presumably with a considerable fraction occupying substitutional sites and electrically active.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 243-246 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal stability of TiSi2 on mono- and polycrystalline silicon was investigated by cross-sectional transmission electron microscopy and high-resolution electron energy loss spectroscopy. Additional heat treatments after silicide formation result in a rough silicide/silicon interface, discontinuity of the metal silicide film, and a penetration of silicide into silicon/polycrystalline silicon substrates. Plausible explanations for these observations are presented.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2773-2776 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Titanium interaction with phosphorus-doped polycrystalline silicon gate electrodes was investigated by cross-sectional transmission electron microscopy and correlated with sheet resistance measurements. Phosphorus concentration above 1×1016 ion/cm2 in the polycrystalline silicon leads to decreased TiSi2 formation, discontinuous metal silicide layer, and increased sheet resistance. A possible cause could be the formation of titanium phosphide at high phosphorus concentration in the polycrystalline silicon, competing with the total titanium available for silicide formation.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1259-1262 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Arsenic segregation at polycrystalline silicon/silicon and polycrystalline silicon/silicon oxide interfaces was examined directly by transmission electron microscopy (TEM) and scanning transmission electron microscopy(STEM). Segregation occurring precisely at these interfaces was identified. A simple model was proposed based on arsenic segregation to structural units containing dangling bonds and consequent bond saturation. The removal of these dangling bonds will then play an important role in the electrical properties of these interfaces. Furthermore substitutional arsenic segregation at a degenerate level at these interfaces was also proposed. The subsequent dopant ionization and localized charges at the interfaces was discussed.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2722-2726 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been recently reported that the redistribution of dopant during titanium silicide formation enhances the grain growth of polycrystalline silicon at a temperature lower than it normally occurs. The mechanism which is responsible for the enhanced grain growth has been proposed to be dopant diffusion induced grain-boundary migration. We have carried out a detailed study to clarify the mechanism. The results show that the effect of phosphorus dopant alone has a small influence on the grain growth of polycrystalline silicon around 900 °C. However, much enhanced grain growth of polycrystalline silicon accompanied by titanium silicide formation was observed at 700 °C in medium doped and heavily doped conditions as compared to those without silicide formation. On the other hand, no enhanced grain growth was observed in lightly doped and undoped situations regardless of titanium silicide formation. By correlating these observations with depth profiling of dopant distribution, it is concluded that the formation of titanium silicide serves as a sink for the out-diffusion of dopant. The out-diffusion of dopant, preferentially through grain boundaries, leads to a reduction of 30%–50% of dopant from the implanted levels. The depletion of dopant induces grain boundaries to migrate, and therefore enhances the grain growth.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 438-442 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Equilibrium arsenic segregation to the grain boundaries of polycrystalline silicon was measured directly by x-ray microanalysis in the temperature range 700–1000 °C. A direct link was observed between arsenic segregation and resistivity. Increasing arsenic segregation at the lower annealing temperatures is consistent with an observed increase in resistivity. Fitting the enhancement levels at various temperatures with the McLean segregation isotherm, a binding energy of 0.65 eV/atom and a boundary saturation limit of 12 at. % for arsenic was obtained. A model for the effect of the segregation of arsenic to silicon grain boundaries is proposed. Segregation to boundary defects that cause trapping states can remove these interfacial traps, and segregation to other boundary sites can create a degenerately-doped interfacial layer. The electrical consequences of this segregation are considered, and by comparison of the measured resistivity changes with temperatures with those predicted from these simple models it is proposed that the major contribution to the resistivity in heavily-doped polycrystalline silicon comes from scattering of carriers by the high density of positive charge at the grain boundaries.
    Type of Medium: Electronic Resource
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