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  • 1
    Electronic Resource
    Electronic Resource
    Polycrystalline Columnar Diamond Film Deposited on Spherical Substrate by DC Arc Plasma CVD (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 373-374 (Mar. 2008), p. 134-137 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Diamond film was deposited on spherical molybdenum substrate by DC arc plasma CVDmethod. Diamond film morphology, purities and orientation evolution, obtained from atomic forcemicroscopy, scanning electron microscopy, Raman spectroscopy, X ray diffraction respectively, hasshowed that grains on the growth surface are compact, continuous and uniform. Characteristicdiamond (111), (220), (311) peaks were found and (111) facets were predominant. It revealed thatdiamond film was polycrystalline texture characteristic. There is a typical diamond Raman spectrumpeaks at 1332.0 cm-1, and not graphite and amorphous carbon characteristic peak. High puritydiamond film was deposited. When methane concentration was increased, diamond film has morelocal clusters and vacancy defects such as voids, graphite inclusion, and hydrogen cluster. Therefore,some important parameters such as methane concentration and substrate temperature should beoptimized in depositing diamond film
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/57/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.373-374.134.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of Diamond Spherical Shell Thick Film by DC Plasma CVD (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 375-376 (Mar. 2008), p. 216-220 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Diamond spherical shell thick film was prepared by high power DC-plasma jet CVD.Atom force microscopy, scanning electron microscopy, Raman spectroscopy androughness-profile-meter were used to characterize microstructure, morphology, impurities andorientation evolution of diamond spherical shell thick film. The results show that, when nucleationbegins, grains grow random orientation. The grain size of spherical diamond film prepared iscompact, clear, uniform, continuous and no remarkable bigger grain over the whole surface of film.On the growth surface, (100) facets were dominant, and the cross-section SEM indicated that filmcolumnar spreading grew from the substrate surface to the diamond film surface. The roughness ofthe growth surface was much more than that of the nucleation surface. To adjust some importantparameters as methane concentrate, depositing time, and matrix temperature, and high qualitydiamond spherical shell thick film was deposited
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/57/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.375-376.216.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Some Key Points for EACVD Thick Diamond Film Preparation (2004)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 259-260 (Mar. 2004), p. 517-521 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/47/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.259-260.517.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    Fundamental Study on Diamond Spherical Shell Film for Polishing of Concave Spherical Surface (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 375-376 (Mar. 2008), p. 380-384 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In this paper, a new polishing technique was proposed to polish concave spherical surfaceby diamond spherical shell deposited by DC-Plasma Jet CVD(chemical vapor deposition), andpreparation was studied from both experiment and theory. The deposited films were investigated bysome techniques including: scanning electron microscopy (SEM), atom force microscopy (AFM),Raman spectroscopy, and roughness-profile-meter, which were used to analyze surface phase,microstructure, internal quality and surface roughness. The results show that the deposited diamondspherical shell film has some remarkable properties, such as high surface density, high hardness.Compared to traditional polishing techniques, it will have some potential advantages as convenient,flexible, efficient and precious. To adjust some important parameters as methane concentration,depositing time, and it can deposit the different size grain diamond spherical shell films, which areused to polish different precision degree concave spherical surfaces. Meantime, to change curvatureof diamond spherical shell, it can adapt to polish various curvature radius concave spherical surfaces
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/57/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.375-376.380.pdf
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  • 5
    Electronic Resource
    Electronic Resource
    Investigation of Technology and Analysis of Residual Stress in Large Area Diamond Films (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 532-533 (Dec. 2006), p. 464-467 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: We investigated the residual stress in diamond films grown on molybdenum substrates asa function of different places in the same large sample. The diamond film wafers of Ф60 mmdiameter were deposited at 900℃ by high power DC arc plasma jet CVD method using a gasmixture of methane (1.8% vol.) and hydrogen ( 90% vol.). The grain sizes, obtained from the topview scanning electron microscopy (SEM) images, were found to become larger from center to theborder in the same sample, and the x-ray diffraction indicated that the intensity of characteristicspectroscopy in same diamond film was changed from (220) to (111) with the increases of (311).Profile curves presented the appreciable difference of surface texture from center to edge. The filmhad 4.3GPa of residual compressive stress. Examination of the Raman spectra of the film revealedthat residual stress in the film of up to approximately 0.70GPa, and the Raman spectroscopy shiftsfrom 1332.99cm-1 at the center to 1331.17cm-1 at the border, which means the stress mode changedfrom compressive to tensile. These demonstrated a significant inhomogeneity of stress in diamondfilms. The differences have been attributed partly to high temperature inhomogeneity arc jet duringgrowth and morphological aspects of the film growth. The relationships between stress and methaneconcentration, and substrate temperature are discussed in detail
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.532-533.464.pdf
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of DC-Plasma Arc Behavior on Growth of Diamond Film (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 315-316 (July 2006), p. 385-390 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: DC-Plasma arc behavior is one of the key factors on growth of diamond film. The resultsshow that keeping steady DC-Plasma arc can grow better quality diamond film. In a long-timegrowth of diamond film, there is sediment carbon on about 5mm border-entad anode annulus, whichwas proved to be graphite. It results in fluctuating and instability of DC-Plasma arc and in theDC-Plasma density, which causes graphite generation and much stress in the film. By means ofadjusting anode annulus assembly, pausing the supply of carbon source and increasing H2, theproblem of sediment carbon cab be effectively resolved. Finally, the mechanism of the effect of arcbehavior on growth of diamond film is discussed
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/51/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.315-316.385.pdf
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of Methane Concentration on Growth of Carbon Balls in Anode Nozzle and Arc Stability of DCPJ CVD Plasma Torch (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 315-316 (July 2006), p. 742-747 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: High quality diamond film wafers with different thickness are prepared by high powerDC arc plasma jet CVD (DCPJ CVD) method using a CH4/Ar/H2 gas mixture. The effects ofmethane concentration on the growth of carbon balls in anode nozzle and arc stability are studiedwith theoretical analysis and experimental investigation. The results indicate that different sizes ofcarbon balls may rapidly grow in the anode nozzle with methane concentration higher than 2Vol-%, symmetry and uniformity of the rotating arc are strongly affected with the occurrence ofcarbon balls, which will result in non-uniform deposition of diamond films over a large substratearea. The methane concentration should be controlled at a low level to keep diamond film wafersgrowth stable. Characterization by X-ray diffraction, Raman spectroscopy and SEM analysis arealso carried out
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/51/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.315-316.742.pdf
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  • 8
    Electronic Resource
    Electronic Resource
    Preparation of Nanocrystalline Diamond Films on Molybdenum Substrate by Double Bias Method (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 315-316 (July 2006), p. 646-650 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The synthesis of nanocrystalline diamond film on polycrystalline molybdenum substrateswas carried out by using of self-made hot filament chemical vapor deposited (HFCVD) system.Positive bias voltage on the grid electrode on top of hot filaments and negative bias voltage on thesubstrate were applied. High purity and extremely smooth nanocrystalline diamond films weresuccessfully prepared by using the double bias method. Raman, SEM, XRD and AFM results showthat the diamond films obtained have grain sizes less than 20nm, nucleation density higher than1011cm-1. The mechanism of double bias is also discussed in this paper. The positive grid biasincreases the active, decomposition and ionization of hydrogen and methane molecules, whilenegative substrate bias helps positive carbon-containing ions bombard the substrate that leads to thehigh nucleation density of the diamond film
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/51/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.315-316.646.pdf
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