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  • 1
    Electronic Resource
    Electronic Resource
    Comparison of one- and two-photon optical beam-induced current imaging (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2226-2231 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical beam induced current (OBIC) imaging through the backside of integrated circuits was investigated in the wavelength λ region from 1.15 to 1.26 μm. With a subpicosecond excitation source and approximately 1 mW at the sample, the two-photon contribution to the generated photocurrent dominates at λ=1.25 μm but becomes negligible for λ〈1.18 μm. One-photon- (1P-) and two-photon- (2P-) OBIC images are very different. In the 1P case a strong contribution by scattered light to the carrier generation leads to an edge enhancement effect that is entirely missing when 2P excitation dominates. 2P-OBIC images often show supply-voltage dependent intensity steps that are much sharper than the optical resolution permits. The advantages of 2P-OBIC lie in the spatial confinement of the free carrier generation, a more relevant contrast mechanism, and the promise of a substantial increase in spatial resolution because of the quadratic intensity dependence and the possibility of using silicon solid immersion lenses, which could eventually provide resolution sufficient for circuits made by deep UV lithography. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371035
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  • 2
    Electronic Resource
    Electronic Resource
    Feasibility of molecular-resolution fluorescence near-field microscopy using multi-photon absorption and field enhancement near a sharp tip (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1294-1301 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aperture-based near-field microscopy suffers from fundamental limitations imposed by the electromagnetic skin depth of the aperture material and a rapidly decreasing throughput as the aperture is made smaller. Apertureless approaches without these limitations have been demonstrated for coherent imaging but are not easily applicable to incoherent processes such as fluorescence or Raman scattering and to photochemical surface modification. Using multi-photon processes in conjunction with the field enhancement that occurs at a sharp tip in close apposition to a substrate should permit substantial localization of absorption and excitation to a nm sized volume. The expected enhancement of the optical field at the tip edge is calculated here for various combinations of metallic and nonmetallic tip and substrate materials. It is estimated that when using 100 fs pulses repeating at 100 MHz average laser powers of about 10 mW should be sufficient to reach saturating field strengths for three-photon absorption. Steady state and instantaneous temperature rises at the tip are estimated and found likely not to be a limiting factor. Fluorescence quenching is expected to limit the resolution achievable with metallic tips to about 5 nm, but tips made from highly refracting insulators or semiconductors should allow truly molecular resolution. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369260
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Two-photon photocurrent imaging of vertical cavity surface emitting lasers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1510-1512 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that two-photon photocurrent imaging can be used to nondestructively study vertical cavity surface emitting lasers on a microscopic level. In particular, we study the aperture isolation created by shallow ion implantation. The combination of two-photon backside imaging and a probe station is ideal for internal and full wafer characterization. The required peak and average power levels for testing can be easily satisfied by available compact ultrafast laser sources, making the technique practical and user friendly. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126079
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  • 4
    Electronic Resource
    Electronic Resource
    Two-photon optical beam induced current imaging through the backside of integrated circuits (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2578-2580 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two-photon optical beam induced current (TOBIC) images were acquired through the polished backsides of integrated circuits. An excitation beam with a photon energy below the band gap can traverse even thick substrates virtually unattenuated. At the focus—and only there—two-photon absorption generates electron-hole pairs very efficiently when using a sub-picosecond light source. An additional advantage of TOBIC is a significant increase in spatial resolution. With high numerical aperture objective lense features smaller than 1 μm are easily discernible. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119334
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    Paper (German National Licenses)
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