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  • 1
    Electronic Resource
    Electronic Resource
    Reversible singlet energy transfer in 1,3-di(2-naphthyl)propyl acetate (1985)
    s.l. : American Chemical Society
    Macromolecules 18 (1985), S. 2321-2324 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00153a048
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  • 2
    Electronic Resource
    Electronic Resource
    Polarization and structural properties of high-energy electron irradiated poly(vinylidene fluoride-trifluoroethylene) copolymer films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 452-461 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of high-energy electron irradiation on structural and polarization properties of 50/50 mol % copolymer of poly(vinylidene fluoride-trifluoroethylene) was investigated for both mechanically stretched and unstretched films. Although stretching can significantly enhance the polarization and dielectric responses in unirradiated films, it was observed that this enhancement was not significant in irradiated films. In addition, the polarization in both types of films after irradiation can be described quite well by a logarithmic mixing law of composites, which consist of crystallites embedded in an amorphous matrix with nearly the same fitting parameters. On the other hand, the enhancement of the mechanical properties from stretching persists after the irradiation, and the elastic modulus along the stretching direction remains high after irradiation in comparison with unstretched films. It was found that the dielectric dispersion in both types of films after irradiation fits well to the Vogel–Fulcher law. It was also observed that the crystallinity decreases and the crosslinking coefficient increases continuously with dose. However, there was no direct one to one type relationship between the crystallinity and the crosslinking coefficient. Although stretching can reduce the rate of crosslinking, the reduction of crystallinity with dose for stretched and unstretched films does not show a marked difference. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371883
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  • 3
    Electronic Resource
    Electronic Resource
    Anomalous temperature dependence of photoluminescence from InAs quantum dots (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2529-2532 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled InAs quantum dots are fabricated on a GaAs substrate by molecular beam epitaxy. The dots are covered by several monolayers of In0.2Ga0.8As before a GaAs cap layer and an in situ postgrowth annealing is performed to tune the emission to higher energy. The temperature dependence of photoluminescence from this structure demonstrates a slower redshift rate of the peak position, a gradual broadening of the linewidth and an abnormal enhancement of integrated intensity as the temperature is increased from 15 to 300 K. These phenomena are closely related to the introduction of an InGaAs layer and to the intermixing of In and Ga atoms during annealing. We propose a model to explain the unusual increase in PL intensity, which fits the experimental data well. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1288231
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  • 4
    Electronic Resource
    Electronic Resource
    Thin-film BiPbSrCaCuO direct current superconducting quantum interfering devices operating at 78 K (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7629-7631 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct current SQUIDs (superconducting quantum interference devices) have been successfully fabricated by using a Pb-doped BiSrCaCuO superconducting thin film made by mixed evaporation of a single source composed of related components with a resistance heater. The dc SQUID comprises a square washer with a small hole. These SQUIDs show perfectly periodic voltage-flux characteristics without magnetic shield, that is, typically, the flux noise and energy resolution at a frequency range from dc to 1 Hz and at 78 K being 1.7×10−3 Φ0/(square root of)Hz and 3.6×10−26 J/Hz, respectively. Meanwhile, we have found out that one of the SQUIDs still was able to operate on flux-locked mode without bias currents and showed voltage-flux second harmonic characteristics. This phenomenon is not well understood, but it may be related to I-V (current-voltage) characteristics of the dc SQUID.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349722
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  • 5
    Electronic Resource
    Electronic Resource
    Relation between growth conditions and deep levels in GaAs grown by molecular-beam epitaxy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2136-2137 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy (DLTS) has been studied in GaAs grown by molecular-beam epitaxy. Samples were grown under As- or Ga-stabilized conditions as well as in the transition region between the corresponding surface reconstructions. The layers exhibit different sets of DLTS peaks depending on the surface structure during growth. A minimum concentration, less than 1012 cm−3, was measured in samples grown in the transition region. The origin of the deep levels is related to the surface stoichiometry since the deep levels cannot be correlated either to the concentration of shallow levels or to chemical impurities detected by high-sensitivity secondary ion mass spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339509
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  • 6
    Electronic Resource
    Electronic Resource
    Single-electron tunneling effects in a metallic double dot device (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 667-669 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on differential conductance measurements on a gold double-dot structure at 4.2 K. The two dots were connected in series by tunnel junctions formed by atomic force microscopy manipulation of nanodisks. The tunnel junctions were made strongly asymmetric. The characteristic honeycomb-shaped charging diagram separating different Coulomb blockade regions of well-defined occupancy of electrons was observed and the cells in the charging diagram were found to be skewed by the asymmetry of the tunnel junctions. In addition, a double-dot Coulomb staircase structure, with steps of varying width, was observed and was studied for varying gate voltage. The occupancy of electrons on the two dots was determined as a function of both drain source and gate voltages. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1436532
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  • 7
    Electronic Resource
    Electronic Resource
    Does a magnetic barrier or a magnetic-electric barrier structure possess any spin polarization and spin filtering under zero bias? (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3119-3121 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we have clarified that there is no spin polarization and spin filtering in a magnetic barrier structure as well as in a magnetic–electric barrier structure using our explicit expressions for electron transmission probability. Our results are found to be contradictory to those of A. Majumdar [Phys. Rev. B 54, 11911 (1996)] and G. Papp and F. M. Peeters [Appl. Phys. Lett. 78, 2184 (2001)]. We have shown the significant spin polarization and spin filtering observed by these authors were caused by a mistake in their transmission probability. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1416167
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of boundary roughness on the conductance of quantum wires (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2364-2366 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The generic effects induced by boundary roughness on the electron transport through quantum wires have been studied. It is found that the conductance of the rough quantum wires shows rapid fluctuations and strong, broad dips between adjacent plateaus at very low temperatures, and a recovery of the plateau structure at increased temperatures. It is also found that in the recovered plateau structure, the step values are suppressed and the conductance shows long transition regions between adjacent steps. These results agree with existing experiments and can be used as a guideline for the evaluation of the fabrication process of quantum wires. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1311606
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  • 9
    Electronic Resource
    Electronic Resource
    Conductance oscillations induced by longitudinal resonant states in heteroepitaxially defined Ga0.25In0.75As/InP electron waveguides (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2274-2276 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured at low temperatures the conductance of electron waveguides fabricated from modulation-doped quantum wells by wet etching and regrowth. We have found that, for a waveguide with abruptly changed geometry at the entrance and exit, the conductance shows oscillations, which are superimposed on a conventional conductance plateau structure. The periods and amplitudes of conductance oscillations depend on the length to width aspect ratio of the waveguide. In addition, the amplitudes of conductance oscillations decrease with increasing temperature. We propose that the observed oscillations are caused by the formation of longitudinal resonant electron states in the waveguide, in analogy with optical Fabry–Perot effects. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126319
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  • 10
    Electronic Resource
    Electronic Resource
    Effects of charged self-assembled quantum dots on two-dimensional quantum transport (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1704-1706 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of a layer of InAs quantum dots on the transport properties of a nearby two-dimensional electron gas (2DEG) in an InGaAs/InP quantum well is investigated. The probability of the scattering between edge states is found to increase as the distance between the layer of the dots and the 2DEG decreases. It is shown that Coulomb scattering by electrons in the charged quantum dots play an important role in the scattering between edge states. An effect of the electrons in the dots is to mediate scattering between spin-split edge states. This is demonstrated by showing that the overshoot effect in the quantum Hall regime is only present when the dots are charged with electrons. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126142
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