Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 7186-7188 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recombination dynamics of excitonic transitions in GaN homoepitaxial layers has been studied by means of time-resolved luminescence spectroscopy. An excitation-density-dependent transition of the dominant radiative recombination process at 3.471 eV from donor-bound excitons to biexcitons was clearly observed in the temporal behavior. In addition, double-exponential decay of biexciton luminescence was observed, which is one of the characteristics of biexciton luminescence at high excitation densities. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5779-5781 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature dependence of reverse-biased photoluminescence has been investigated for understanding the radiative recombination mechanism in an InGaN single-quantum-well light-emitting diode. It is found that the applied-voltage dependence of luminescence intensities is strongly affected by temperature from 17 to 100 K, and a dramatic decrease in the luminescence intensity is observed over 100 K. The model of a field ionization of excitons cannot explain this dramatic decrease in the luminescence intensity. It is therefore suggested that the free-carrier recombination process becomes dominant over 100 K. Two emission components are found on the condition of reverse bias. The lower-energy component becomes strongly dependent on reverse-bias voltage with increasing temperature, and fully disappears under the applied voltage of only −2 V at 100 K. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2135-2137 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering studies were performed on ZnSe-ZnS strained-layer superlattices with the incident light parallel as well as perpendicular to the interface plane. We found for the first time that the optical phonon modes split into two types, that is a singlet and a doublet, by the built-in biaxial stress. A new method to characterize the directional stress is demonstrated.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1546-1548 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The radiative recombination process of the blue emission band in an InGaN single-quantum-well light-emitting diode has extensively been investigated by means of the dependence of an external electric field on photoluminescence and time-resolved photoluminescence spectra. Two emission (higher and lower) components separated by about 40 meV are found in the emission band on the condition of reverse bias at 77 K. It is also found that the luminescence intensity decreases dramatically with increasing reverse-bias voltage at room temperature. The model based on field ionization of excitons cannot explain the present experimental phenomena. It is, therefore, suggested that the free-carrier recombination process is dominant at room temperature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1429-1431 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recombination dynamics of dense excitonic systems in CdxZn1−xS–ZnS quantum-well structures has been studied by means of time-resolved luminescence spectroscopy. Experimental evidence for biexciton formation was obtained. Furthermore, ultraviolet stimulated emission was observed just at the energy position of the biexciton luminescence. It was proposed that the stimulated emission was due to the biexciton decay process. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 88-90 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excitonic luminescence from high-quality ZnS epitaxial layers has been studied under high-density excitation. The first experimental evidence for biexciton formation in ZnS was obtained. The binding energy of the biexciton was estimated to be 9 meV, which was the largest value among II–VI compound semiconductors with zinc blende modification. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2190-2192 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stimulated emission at 374.9 nm has been observed in an optically pumped Cd0.22Zn0.78S-ZnS strained-layer superlattice at room temperature. Using a pump-and-probe technique with nanosecond excitation pulses, optical gain has also been observed at the tail part of the n=1 heavy-hole exciton absorption spectrum in the presence of the clear absorption peak of the exciton. Our experimental results suggest that the stimulated emission originates from excitonic gain.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2929-2931 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the fabrication and operation of vertical cavity surface emitting layers by pulsed optical pumping. The structure consists of a vertical cavity resonator with SiO2/SiN distributed Bragg reflectors and a CdZnSe/ZnSe strained-layer superlattice active region. The emission spectra rapidly narrow to full width at half-maximum of 7 A(ring) and the emission intensity increases by over two orders of magnitude, indicating stimulated emission. Lasing is observed at thresholds of ≈44 kW/cm2 at temperatures up to 30 K with lasing wavelength near 488 nm. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Munksgaard International Publishers
    Clinical oral implants research 16 (2005), S. 0 
    ISSN: 1600-0501
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: In the present study, we compared bone regeneration ability in sinus floor elevation between a tissue engineering method using mesenchymal stem cells (MSCs) and platelet-rich plasma (PRP), and a promising new method using particulate cancellous bone and marrow (PCBM) and PRP. Bilateral sinus floor elevation procedures were performed in 18 adult Japanese white rabbits. MSCs/PRP or PCBM/PRP complexes were grafted to each maxillary sinus in the same rabbits. The MSCs were isolated from rabbit iliac crest marrow, and PRP was obtained from peripheral blood. PCBM were collected from the rabbit iliac crest and mixed with PRP. The animals were sacrificed at 2, 4, and 8 weeks after transplantation, and the bone formation ability of each implant was evaluated histologically and histometrically. According to the histological observations, both sites (MSCs/PRP and PCBM/PRP) showed well newly formed bone and neovascularization at 2 and 4 weeks. However, at 8 weeks, the lamellar bone was observed to be occupied by fatty marrow in large areas in both sites. There was no significant difference in bone volume or augmented height between MSCs/PRP and PCBM/PRP groups each week, but there were significant differences in bone volume and augmented height between 2 and 8 weeks in PCBM/PRP or MSCs/PRP groups and in bone volume between 4 and 8 weeks in the PCBM/PRP group (P〈0.05). These results suggest that the MSCs/PRP complex may well be used for bone regeneration in sinus floor elevation, compared with the PCBM/PRP complex.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Munksgaard International Publishers
    Clinical oral implants research 15 (2004), S. 0 
    ISSN: 1600-0501
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: The present study investigated a correlation between osseointegration in dental implants and an injectable tissue-engineered bone, using mesenchymal stem cells (MSCs) and platelet-rich plasma (PRP). Initially, the teeth in the mandible region were extracted and the healing period was 1 month. Bone defects on both sides of the mandible were prepared with a trephine bar. The defects were implanted with graft materials as follows: PRP, dog MSCs (dMSCs), and PRP, autogenous particulate cancellous bone and marrow (PCBM), and control (defect only). Two months later, the animals were evaluated by histology, and at the same time dental implants were installed. Two months later, the animals were sacrificed and nondecalcified sections were evaluated histologically and histometrically. According to the histological observations, the dMSCs/PRP group had well-formed mature bone and neovascularization, compared with the control (defect only) and PRP groups, as was the same for the PCBM group. A higher marginal bone level was observed around implants with PRP, PCBM, and dMSCs/PRP compared with the control. Furthermore, the values describing the amount of bone–implant contact (BIC) at the bone/implant interface were significantly different between the PRP, PCBM, dMSCs/PRP, and control groups. Significant differences were also found between the dMSCs/PRP and control groups in bone density. The findings of this experimental study indicate that the use of a mixture of dMSCs/PRP results in good results such as the amount of BIC and bone density comparable with that achieved by PCBM.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...