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  • 1
    Digitale Medien
    Digitale Medien
    Spectroscopic observation of interface states of ultrathin silicon oxide (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7051-7057 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Interface states in the Si band gap present at oxide/Si(100) interfaces for ∼3-nm-thick Pt/2.1∼3.6-nm-thick silicon oxide/n-Si(100) metal–oxide–semiconductor devices are investigated by measurements of x-ray photoelectron spectra under biases between the Pt layer and the Si substrate, and their energy distribution is obtained by analyzing the amount of the energy shift of the substrate Si 2p3/2 peak measured as a function of the bias voltage. All the interface states observed using this new technique have discrete energy levels, showing that they are due to defect states. For the oxide layer formed in H2SO4+H2O2, the interface states have three density maxima at ∼0.3, ∼0.5, and ∼0.7 eV above the valence-band maximum (VBM). For the oxide layer produced in HNO3, two density maxima appear at ∼0.3 and ∼0.7 eV above the VBM. The energy distribution for the oxide layer grown in HCl+H2O2 has one peak at ∼0.5 eV. The 0.5 eV interface state is attributed to the isolated Si dangling bond defect. The 0.3 and 0.7 eV interface states are, respectively, due to Si dangling bonds with which Si and oxygen atoms in the silicon oxide layer interact weakly. The oxide layer formed in HCl+H2O2 has the highest-density interface states. The oxide layer produced in HNO3 has the lowest-density interface states and, thus, the final cleaning using HNO3 is recommended for the device fabrication. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.361472
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  • 2
    Digitale Medien
    Digitale Medien
    Interface state-induced shift of the oxide and semiconductor core levels for metal–oxide–semiconductor devices (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1578-1582 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Measurements of x-ray photoelectron spectra are performed for ∼3-nm-thick Pt/∼3.6-nm-thick silicon oxide/n-Si(100) devices under biases between the Pt layer and the Si substrate. It is observed that the oxide Si 2p peak as well as the substrate peaks is shifted upon applying biases. These shifts are caused by a bias-induced change of the potential drop across the oxide layer due to the change in the amount of the interface state charge. The amount of the shift of the oxide Si 2p peak is well correlated to that of the substrate Si 2p3/2 peak. The energy distribution of the interface states is obtained by analyzing the amount of the shift of the substrate Si 2p3/2 peak measured as a function of the bias voltage. The interface state spectrum has one peak near the midgap, and the peak is attributed to isolated Si dangling bond states. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362954
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  • 3
    Digitale Medien
    Digitale Medien
    First operation of HiECR-3 ion source for 14–18 GHz : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1186-1188 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: The new HiECR-3 ion source has been designed to have a mirror field and a hexapole field strong enough for both 14 and 18 GHz operation. We designed, manufactured, and operated the HiECR-3, for studying characteristics of volume and surface dependence on the electron cyclotron resonance (ECR) plasma zone. From these measurements of the ECR plasma, we examined many problems. They are the ECR plasma zone, the extraction efficiency from the plasma zone, electron injection from another ECR plasma zone, and volume and surface of the ECR plasma zone. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1146727
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  • 4
    Digitale Medien
    Digitale Medien
    Three-dimensional analysis of ion beam deflection by the magnetic field at H− ion sources for the negative-ion-based neutral beam injection : Proceedings of the 7th international conference on ion sources (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 1144-1146 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: In negative-ion-based neutral beam injection (NBI) systems for the large helical device (LHD), beams must be transported over 13 m from the H− ion source to the injection port. In order to clarify beam deflection by the electron deflection magnets set in a beam extraction grid (EG) and to control beam transport direction, we analyzed beam trajectories. The physics of the beam deflection was studied with theoretical calculations and the deflection angle was estimated by 3D beam trajectory simulation. The evaluated deflection angle was 10 mrad in the opposite direction of the electron deflection when the maximum magnetic field on the beam axis was 480 G and the beam energy was 83.2 keV. The electrostatic lens effect on the beam deflection at the EG exit was estimated to be larger than the magnetic field effect. This deflection was reduced to 2 mrad by a 1.3 mm displacement of the grounded grid (GG) aperture, a result in agreement with experimental results of a 1/3-scale model for the LHD ion source. The maximum GG aperture displacement of the LHD ion source was designed as 3.4 mm to reduce the deflection and to focus multibeamlets using the simulation. We have developed the ion source with this design. The targeted performance is a production of H− beams of 40 A (40 mA/cm2), 180 keV. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1148651
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  • 5
    Digitale Medien
    Digitale Medien
    High current H− ion production in cesium seeded large ion sources : Proceedings of the 5th international conference on ion sources (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1195-1197 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: The characteristics of a large negative-ion source with external filter is investigated for the neutral-beam injection system in a large helical device. The magnetic cusp field is set up at almost the same strength as that in our well optimized 1/3 ion source with rod-type magnetic filter. An H− ion current of 5.2 A is extracted from the ion source with Cs seeding. The H− current corresponds to 19.7 mA/cm2, and the value is comparable to the current density obtained using the 1/3 scaled ion source with a rod-type magnetic filter at the same extraction voltage. In low operating pressure, the ion source with the external filter has a better performance on the extraction of H− ions.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1145055
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  • 6
    Digitale Medien
    Digitale Medien
    Ion-induced radical production on surfaces during deposition of hydrogenated amorphous carbon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3735-3737 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In a methane/argon discharge used for deposition of hydrogenated amorphous carbon (a-C@B:H), energetic ion bombardment yields radicals on solid surfaces by two mechanisms: (i)fragmentation of hydrocarbon ions at their impact on the surface and (ii)sputtering of the already deposited a-C:H film. To discriminate between these two mechanisms, the emission intensity of CH(A-X) in the vicinity of a negatively biased electrode was measured as a function of the ion impact energy. The threshold energy for yielding the excited CH radical was found to be ∼2 eV for fragmentation and ∼80 eV for sputtering. The fragmentation yield is much larger on a metal surface than on a-C:H layer. The sputtering yield dominates over the fragmentation yield for the high impact energy(〉150 eV).
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346287
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  • 7
    Digitale Medien
    Digitale Medien
    Dynamics of laser sputtering at GaN, GaP, and GaAs surfaces (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3268-3274 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Laser sputtering of GaAs, GaP, and GaN has been studied by measuring angle-resolved time-of-flight (TOF) distributions of emitted neutral particles. The observed mean translational energy and sputtering yield were found to show strong forward peaking depending on the laser power densities, thence on the desorption yield. This fact can be explained in terms of postdesorption collisions among desorbed particles as predicted theoretically [I. NoorBatcha, R. R. Lucchese, and Y. Zeiri, J. Chem. Phys. 86, 5816 (1987); 898, 5251 (1988), and Kelly and R. W. Dreyfus, Surf Sci. 198, 263 (1988); Nucl. Instr. Methods B 32, 341 (1988); J. Chem. Phys. 92, 5048 (1990)]. However, the observed velocity distributions of sputtered particles were found to be in contradiction with the so-called shifted Maxwellian, because the best-fitted center of mass velocities for Ga were always found to be negative. In addition, Kelly's Mach number M, estimated from the energy spectra, was found to be significantly larger than those estimated from the yield spectra. It is suggested that energy transfer from the internal states of diatomic molecules to the translational motion of Ga may play an important role in the final TOF spectra.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.350348
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  • 8
    Digitale Medien
    Digitale Medien
    Interface states at ultrathin oxide/Si(111) interfaces obtained from x-ray photoelectron spectroscopy measurements under biases (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2276-2278 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The energy distribution of interface states for Si(111)-based metal–oxide–semiconductor (MOS) devices with an ultrathin chemical oxide layer is obtained from measurements of x-ray photoelectron spectra under biases. All the observed interface states have discrete energy levels. The energy deviation of the interface state levels from the midgap is smaller than that for the Si(100)-based MOS devices; this is attributed to weaker interaction of the Si dangling bond with Si and oxygen atoms in the oxide layer. The densities of the interface states at the Si(111)/ultrathin oxide interface are comparable to those at the Si(100)/ultrathin oxide interface. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.117532
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  • 9
    Digitale Medien
    Digitale Medien
    Evidence showing that β-adrenoceptor subtype responsible for the relaxation induced by isoprenaline is principally β2 but not β1 in guinea-pig tracheal smooth muscle (2004)
    Oxford, UK : Blackwell Science Ltd
    Autonomic & autacoid pharmacology 24 (2004), S. 0 
    Details
    ISSN: 1474-8673
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Chemie und Pharmazie , Medizin
    Notizen: 1 The present study was carried out to pharmacologically identify the β-adrenoceptor subtype that mediates isoprenaline-elicited relaxation in the isolated guinea-pig tracheal smooth muscle, to answer the question whether it is β1- or β2-subtype? 2 Isoprenaline as well as salbutamol, a well-known β2-selective adrenoceptor agonist, produced a concentration-dependent relaxation with a pD2 value of 8.12 vs. 7.54 for salbutamol. 3 Isoprenaline-elicited relaxation was not affected by β1-selective antagonists, atenolol and CGP-20,712A, within the concentration ranges supposed to antagonize β1-subtype: atenolol, ≤10−6 m; CGP-20,712A, ≤10−8 m. 4 By contrast, the concentration–response curves for isoprenaline as well as salbutamol were shifted rightwards in a competitive fashion by atenolol at the concentrations ≥3 × 10−6 m. However, pA2 values of atenolol against isoprenaline (5.86) and salbutamol (5.71) were consistent with the value corresponding to β2- but not to β1-subtype (around 7.00), and these values were not significantly different from each other. 5 Competitive antagonism of the relaxations to isoprenaline and salbutamol were also obtained with β2-selective antagonists, butoxamine and ICI-118,551. Against isoprenaline and salbutamol, the pA2 values of butoxamine (6.51 vs. 6.81) and ICI-118,551 (8.83 vs. 8.90) were substantially identical. Thus the primary mediation of β2-receptor in the relaxations was strongly supported. 6 The present findings provide evidence that the β-adrenoceptor which mediates isoprenaline-elicited relaxation of guinea-pig tracheal smooth muscle is essentially β2- but not β1-subtype. The present study also indicates the importance of using multiple receptor antagonists with different pA2 values to pharmacologically identify the responsible receptor subtype in smooth muscle mechanical responses.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1111/j.1474-8673.2004.00314.x
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  • 10
    Digitale Medien
    Digitale Medien
    Analysis of the articulation after glossectomy (1996)
    Oxford BSL : Blackwell Science Ltd
    Journal of oral rehabilitation 23 (1996), S. 0 
    Details
    ISSN: 1365-2842
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Notizen: Rehabilitation of the oral cancer patient should aim to achieve not only morphological restoration but also post-operative functions. However, there are few reports describing quantitative evaluation of the latter. The authors have attempted quantitative evaluation of post-operative articulatory function after glossectomy, and report the evaluation of it by speech intelligibility, electropalatography (EPG), and acoustical analysis. Subjects were five directly sutured patients and five patients reconstructed with forearm flap, all after glossectomy. The target syllable was /ta/ from among speech intelligibility test samples. The speech intelligibility and acoustical analysis were investigated pre-operation, and 1, 6 and 12 months post-operation. EPG data were collected by DP-01(RION) at 6 months post-operation. Acoustical analyses were carried out by consonant frequency characteristics and formant variance from consonant to vowel transitions. As a result, subjects reconstructed with a forearm flap showed higher restorative tendency than directly sutured subjects. Articulatory characteristics expected from acoustical analysis were more in agreement with the results of EPG than with the results of the speech intelligibility test. From the results, it was suggested that the acoustical analysis used for this research could reveal changes in articulatory movement and will be useful for quantitatively evaluating post-operative articulatory functions.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1046/j.1365-2842.1996.d01-186.x
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