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  • 1
    Electronic Resource
    Electronic Resource
    The interfacial layer formation of the Al2O3/Si structures grown by low-pressure metalorganic chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 760-762 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metalorganic chemical vapor deposition of Al2O3 using Al(O-C3H7)3 and N2O via pyrolysis was investigated with the goal of producing Al2O3 epitaxial films on p-Si (100) substrates. Room-temperature capacitance-voltage measurements clearly showed metal-insulator-semiconductor behaviors for the samples with the Al2O3 insulator gate, and the interface state densities at the Al2O3/p-Si interface were approximately 1011 eV−1 cm−2 at the middle of the Si energy gap. Auger depth profiles demonstrated that the Al2O3/Si interface was not abrupt, and transmission electron microscopy verified the formation of an interfacial layer in the Al2O3/Si interface and the formation of a polycrystalline Al2O3 thin film. These results indicated that the failure to form Al2O3 epitaxial films was due to the formation of an interfacial layer prior to the growth of the Al2O3 layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355224
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  • 2
    Electronic Resource
    Electronic Resource
    Structural properties of BaTiO3 thin films on Si grown by metalorganic chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1547-1549 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric BaTiO3 thin films were grown on Si(100) substrates at a temperature of 600 °C by in situ metalorganic chemical vapor deposition. X-ray diffraction and transmission electron microscopy results suggested that the 〈110〉 direction of the BaTiO3 preferred oriented films is parallel with the (100) direction of the Si substrates. Auger electron spectroscopy measurements showed that the compositions of the as-grown films were with a uniform distribution throughout the thickness of the films and with a sharp interface. These results indicate that the failure to obtain BaTiO3 epitaxial films was due to the formation of an interfacial amorphous layer prior to the creation of the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353233
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  • 3
    Electronic Resource
    Electronic Resource
    Simultaneous measurement of six layers in a silicon on insulator film stack using spectrophotometry and beam profile reflectometry (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3570-3578 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We performed simultaneous measurements of all the layer thicknesses in six layer silicon on oxide film structures. Visible-near-infrared spectrophotometry was combined with beam profile reflectometry to produce enough information to discriminate between potential solutions; the spectrometer or beam profile reflectometer alone is insufficient to solve such a complicated film stack. Development of a robust measurement recipe required a new global optimization method working in parameter spaces of up to 12 parameters. The recipe obtained was applied to a 50 site mapping of the wafer. We found excellent agreement between our optical measurement results and scanning electron micrograph data for all thicknesses. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364994
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  • 4
    Electronic Resource
    Electronic Resource
    Temperature dependent optical resonances of quantum confined CuCl nanocrystals in borosilicate glasses (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2584-2589 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical density change of the CuCl-doped borosilicate glasses (2 wt% CuCl +52.5SiO2−40B2O3−7.5Na2O(wt%)) heat treated at 550 °C for 0–10 hrs was measured with temperature at spectral vicinity of the CuCl resonant absorption and the effect of size and distribution of CuCl precipitate particles on the optical spectra was investigated. The optical absorption spectrum obtained during heating and cooling cycle showed a typical hysteresis loop because of the melting and solidification of the CuCl particles embedded in the glass matrix. The shape of the optical absorption curve measured at 375 nm with temperature upon melting of CuCl particles was dependent on the size and the distribution of the CuCl particles. While the average size of the CuCl particles increased with heat treatment time, the size difference of the precipitated CuCl particles was found to be decreased with time before 1 h and then increased. The optical absorption spectra of the CuCl doped glass was also predicted theoretically and the predicted spectra curve was found to be in good agreement with experimental data. It is proposed that if the semiconducting particles embedded in an optically transparent matrix and the melting point of semiconductor is lower than that of the matrix material, the average size and size distribution of the particles can be estimated by the optical absorption measurements with temperature. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366070
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  • 5
    Electronic Resource
    Electronic Resource
    Optical and electrical properties of titanium dioxide films with a high magnitude dielectric constant grown on p-Si by metalorganic chemical vapor deposition at low temperature (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1407-1409 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metalorganic chemical vapor deposition of titanium dioxide (TiO2) on p-Si(100) using titanium isopropoxide and nitrous oxide via pyrolysis at relatively low (∼500 °C) temperature was performed to produce high quality TiO2/p-Si interfaces and to fabricate TiO2 insulator gates with a dielectric constant of high magnitude. Scanning electron microscopy shows that the surfaces of the TiO2 films have very smooth morphologies. From the x-ray diffraction analysis, the grown layer was found to be a polycrystalline film. Raman spectroscopy showed the optical phonon modes of a TiO2 thin film. The stoichiometry of the TiO2 film was investigated by Auger electron spectroscopy. Room-temperature current-voltage and capacitance-voltage measurements clearly revealed metal-insulator-semiconductor behavior for the samples of the Ag/TiO2/p-Si. The interface state density at the TiO2/p-Si interface was approximately high 1011 eV−1 cm−2 at the middle of the Si energy gap, and the dielectric constant determined from the capacitance-voltage measurements was as large as 73. These results indicate the TiO2 layers grown at relatively low temperature can be used for high density dynamic memory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111898
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of PbTiO3 thin films on p-Si grown by metalorganic chemical vapor deposition at low temperature (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1104-1106 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metalorganic chemical vapor deposition of PbTiO3 using Pb (tmhd)2, Ti(OC3H7)4, and N2O via thermal pyrolysis at relatively low temperature (∼500 °C) was performed in order to produce PbTiO3 insulator gates with high quality PbTiO3/p-Si interfaces. Raman spectroscopy showed the several optical phonon modes of the PbTiO3/p-Si structure. The stoichiometry of the PbTiO3 films was observed by Auger electron spectroscopy. Room-temperature current-voltage and capacitance-voltage measurements clearly revealed metal-insulator-semiconductor behavior for the samples with a PbTiO3 insulator gate, and the interface state densities at the PbTiO3/p-Si were approximately 1011 eV−1 cm−2 at the middle of the Si energy gap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109794
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  • 7
    Electronic Resource
    Electronic Resource
    Structural properties and interfacial layer formation mechanisms of PbTiO3 thin films grown on p-Si substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2676-2678 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric PbTiO3 thin films were grown on Si(100) substrates by metalorganic chemical vapor deposition via thermal pyrolysis at relatively low temperature (∼500 °C) using Pb(tmhd)2, Ti(OC3H7)4, and N2O. Transmission electron microscopy results suggested that the grown PbTiO3 films were polycrystalline layers. Auger depth profiles indicated that the compositions of the as-grown films consisted of lead, titanium, and oxygen uniformly distributed throughout the films and that the films exhibited smooth interfaces. These results indicate that the growth of polycrystalline PbTiO3 layers instead of epitaxial films originated from the formation of an interfacial amorphous layer prior to the creation of the films. Further, a mechanism for the formation of an interfacial layer between the PbTiO3 thin films and the p-Si substrates is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111489
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  • 8
    Electronic Resource
    Electronic Resource
    Structural and electrical properties of BaTiO3 thin films grown on p-InSb substrate by metalorganic chemical vapor deposition at low temperature (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1788-1790 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metalorganic chemical vapor deposition of BaTiO3 on p-InSb (111) using Ba(tmhd)2, Ti(OC3H7)4, and N2O via pyrolysis at low (∼300 °C) temperature was performed to produce high-quality BaTiO3/p-InSb (111) interfaces and BaTiO3 insulator gates with dielectric constants of high magnitude. Raman spectroscopy showed the optical phonon modes of a BaTiO3 thin film. The stoichiometry of the BaTiO3 film was investigated by Auger electron spectroscopy. Transmission electron microscopy showed that the BaTiO3 films had local epitaxial formations. Room-temperature capacitance-voltage measurements clearly revealed metal-insulator-semiconductor behavior for the samples with the BaTiO3 insulator gates, and the interface state densities at the BaTiO3/p-InSb interfaces were approximately high 1011 eV−1 cm−2 at the middle of the InSb energy gap. The dielectric constant determined from the capacitance-voltage measurements was as large as 743. These results indicate that the BaTiO3 layers grown at low temperature can be used for both high-density dynamic-memory and high-speed applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109550
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  • 9
    Electronic Resource
    Electronic Resource
    Structural properties of Pt/p -InP heterostructures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 972-974 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion-beam-assisted deposition of Pt on p-InP at room temperature was performed in order to produce Pt epitaxial films with high quality and Pt/p-InP (100) heterostructures with sharp interfaces. From the x-ray diffraction analysis, the grown film was found to be a Pt heteroepitaxial film. Auger electron spectroscopy measurements showed that the composition of the as-grown film was Pt and that the interface quality between the Pt and the InP was relatively good. Transmission electron microscopy showed that the grown Pt was an epitaxial film. These results indicate that the Pt epitaxial films grown on p-InP (100) can be used for both stable contacts in optoelectronic devices and Pt/InP metal-semiconductor-field-effect transistors and that the Pt/InP heterostructures can give good motivation for the fabrication of Pt/InP superlattices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117099
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  • 10
    Electronic Resource
    Electronic Resource
    Calcium-Binding Proteins and Neurotransmitters in the Stomach Myenteric Plexus of the Korean Native Goat (2005)
    Berlin, Germany : Blackwell Verlag GmbH
    Anatomia, histologia, embryologia 34 (2005), S. 0 
    Details
    ISSN: 1439-0264
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The expression of calbindin D-28k (CB), calretinin (CR), substance P (SP) and calcitonin gene-related peptide (CGRP) in the stomach myenteric plexus of the Korean native goat stomach was investigated by immunohistochemistry. The results demonstrated the presence of nerve fibers and cell bodies immunoreactive (IR) to CB, CR, SP and CGRP. In tissues of rumen, reticulum, omasum and abomasum, some distinct neuronal populations could be distinguished according to their morphologic and neuronal chemical properties: Dogiel type I cells which have irregular lamellar dendrites and a single axon, Dogiel type II cells which have large ovoid cell bodies and several long axon-like processes, and small filamentous interneurons. CB-, CR-, SP- and CGRP-IR neurons and fibers were observed in the myenteric plexus of stomach, and varicose nerve fiber immunostained to SP and CGRP also were found in the muscle layer. In myenteric plexus of the stomach, CB- and SP-positive neurons were characterized by Dogiel type II and CR-IR neurons were classified Dogiel type I with lamellar dendrites, and immunoreactivity of CGRP was very weak in the somata. SP- and CGRP-IR nerve fibers formed dense networks within the myenteric ganglia. SP-IR cell bodies and their fibers were found in the myenteric plexus, and the immunoreactivity and number of cell bodies were more than CB-, CR-, and CGRP-IR neurons. These results suggest that SP, CGRP, CB and CR in the myenteric neurons of Korean native goat stomach may have play an important role in the dynamic movement.(Support contributed by: Korean Research Foundation 2003-015-E00195).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1439-0264.2005.00669_66.x
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