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  • 1
    Electronic Resource
    Electronic Resource
    In situ observation of silicon hydrides on Si(100) surfaces during synchrotron-radiation-stimulated Si2H6 gas source molecular beam epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2364-2366 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon hydrides (SiHn) on the Si(100) surface during synchrotron-radiation (SR) stimulated Si2H6 gas source molecular beam epitaxy has been observed in situ at low temperatures (≤400 °C), by means of infrared reflection absorption spectroscopy using CoSi2 buried metal layer substrates. At high temperatures (400 °C, 370 °C), SiH is a dominant surface species, while with temperature decrease from 275 to 50 °C, the number of SiH decreases, and, on the other hand, SiH2 and SiH3 appear and increase. This result explains the change of reflection high-energy diffraction pattern from 2×1 to 1×1. The SiH in the bulk network has not been observed. SR irradiation on the film at 140 °C after deposition shows that SiH2 and SiH3 are easily decomposed to SiH and that SiH decomposes much more slowly than SiH2 and SiH3. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114346
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    First operation of circular dichroism measurements with periodic photon-helicity switching by a variably polarizing undulator at BL23SU at SPring-8 (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 3191-3197 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This article presents the first operation of the magnetic circular dichroism (MCD) measurement system with periodic photon-helicity switching. The measurements were performed at the newly constructed soft x-ray beamline—BL23SU— at the third-generation synchrotron radiation facility, SPring-8. The monochromator control system was synchronized to the movement of the magnetic row (phase shift) of an APPLE-2 (Sasaki) type variably polarizing undulator. The periodic phase shift of the undulator provided the switching of helicity polarizing soft x rays up to 0.1 Hz. The closed-orbit distortion of the storage ring was controlled to avoid optical axis disturbances at this beamline as well as at other beamlines. The circular dichroism spectra with helicity switching by APPLE-2 show the possibility of high-sensitivity MCD measurements. This method promotes precise MCD measurements and can be a powerful technique to study magnetism as well as dichroism. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1382635
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Ultrahigh-Vacuum Reaction Apparatus to Study Synchrotron-Radiation-Stimulated Processes (1998)
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 5 (1998), S. 1363-1368 
    Details
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: An ultrahigh-vacuum reaction apparatus to study synchrotron-radiation-stimulated processes has been constructed and placed on beamline 4B of the synchrotron radiation storage ring (UVSOR) at the Institute for Molecular Science. The apparatus is designed so that multiple synchrotron radiation processes such as etching and chemical vapour deposition can be carried out successively without breaking the high vacuum. It is equipped with IR reflection absorption spectroscopy (IRRAS) apparatus and reflective high-energy electron diffraction (RHEED) apparatus for in situ observations. The basic parameters of the apparatus including etching and deposition rates have been measured. IRRAS using buried metal layer substrates has been confirmed to be a very useful method of analyzing the reaction mechanisms of the synchrotron-radiation-stimulated processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0909049598011534
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  • 4
    Electronic Resource
    Electronic Resource
    In Situ Detection of Surface SiHn in Synchrotron-Radiation-Induced Chemical Vapor Deposition of a-Si on an SiO2 Substrate (1995)
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 2 (1995), S. 196-200 
    Details
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The sensitivity and linearity of infrared reflection absorption spectroscopy (IRAS) has been significantly improved by using a buried-metal-layer (BML) substrate having an SiO2(15 nm)/Al(200 nm)/Si(100) structure, instead of a plain Si(100) substrate. By applying this BML-IRAS technique to the in situ observation of synchrotron-radiation-induced chemical vapor deposition of amorphous Si (a-Si) on an SiO2 surface using Si2H6 gas, the vibrational spectra of surface SiHn species in this reaction system have been observed for the first time with sufficient sensitivity for submonolayer coverage. The main silicon hydride species after deposition at 423 K are surface SiH2 and SiH. Surface SiH3 and SiH2 are observed to be easily decomposed by synchrotron radiation irradiation. The decomposition rate of SiH by synchrotron radiation irradiation is much slower than those of SiH2 and SiH3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0909049595006091
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    Paper (German National Licenses)
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