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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of InP/GaAs epilayers grown on Si substrates by low-pressure organometallic vapor phase epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 880-882 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial growth of InP on Si with an intermediate GaAs buffer layer by low-pressure organometallic vapor phase epitaxy is reported. Excellent crystallinity of InP epilayers with specular surfaces can be reproducibly obtained. The carrier concentration profile shows that the carrier distribution in the InP layer is very uniform, while an apparent reduction in concentration occurs at the InP/GaAs interface. The 77 K photoluminescence (PL) of the InP layer exhibits a strong near-band-edge emission. No evident shift in PL peak energy for the InP/GaAs/Si sample compared with that for the InP homoepitaxial sample was first observed in this study. These results are superior to those reported previously for the InP/Si heteroepitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99260
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of the ZnSe heteroepilayer on a GaAs/Si substrate (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3898-3900 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe is a semiconductor with a direct band gap of 2.68 eV at room temperature, which makes it one of the most important materials for blue electroluminescent devices and short wavelength laser diodes. In this communication, heteroepitaxial growth of ZnSe on a GaAs/Si substrate by low-pressure organometallic chemical vapor deposition is reported. The ZnSe/GaAs/Si epilayer exhibits a uniform surface morphology. Strong photoluminescence near-band-edge emission was observed. The thickness of the GaAs buffer layer seems to be an important factor in the energy shift of the photoluminescence peak.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344996
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    Paper (German National Licenses)
    Fulltext
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