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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3053-3058 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon carbide films were reactively dc sputtered onto Si(111) substrates using a silicon target in a mixed CH4/Ar atmosphere. Non-Rutherford backscattering using a high energy incident He+ beam (4.3 MeV for carbon analysis) and Auger electron spectroscopy were employed to analyze the composition of the films. Structural investigations of the stoichiometric SiC films showed that they were composed of microcrystalline and amorphous SiC. The formation mechanism of the microcrystalline and amorphous SiC during our deposition process was discussed. The optical behavior of the SiC film was studied by infrared (IR) reflectance in the range of 400–4000 cm−1. The experimental IR reflectance in this range was fitted by calculating the complex dielectric function of the films based on effective medium theory, in which the SiC films were assumed to consist of homogeneously distributed SiC (amorphous and crystalline). The fitting of the experimental data using our model is quite satisfactory; thus the assumed model in our simulation is suitable for describing the IR optical properties of the sputtered SiC films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1281-1285 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, a method for the determination of the sp3/sp2 ratio for highly tetrahedral amorphous carbon (ta-C) films is presented. This method is an optical characterization according to the Bruggeman effective medium approximation based on simulation of the infrared reflection spectrum. The simulation reflectivity is in good agreement with the experimental spectrum, and the obtained results of sp3 content are in good agreement with electron energy loss spectroscopy data, suggesting that this is an effective method for obtaining the sp3/sp2 ratio of ta-C films. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2874-2879 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen incorporated amorphous carbon (a-C:N) films on silicon (111) wafer, quartz, and Ti/C substrates with nitrogen concentration up to 20 at. % are prepared by filtered arc deposition. The nitrogen concentration and area density of the films were measured by Rutherford backscattering. The electrical properties of the films were investigated by Hall electrical measurements. The optical properties of the films were characterized by ultraviolet–visible and infrared reflection spectrometry. Results indicate that the optical band gap and area density of a-C:N films decrease with increasing nitrogen pressure, accompanied with an increase of nitrogen concentration and reflectivity of the films. Furthermore, the influence of nitrogen concentration on the optical band gap of the films is discussed. The dielectric constant, refractive index and absorption coefficient of a-C:N films in infrared region were investigated. The results indicate that the optical constants of a-C:N show considerable variation with wave number and nitrogen content. The variation of optical properties and optical constants of a-C:N films may be due to the development of graphite-like structure with the increasing of nitrogen content in these films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1403-1405 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intense short-wavelength photoluminescence (PL) observed at room temperature from thermal SiO2 films implanted with Si and N is reported. A flat Si profile was first created. N ions were subsequently implanted into the same depth region as the implanted Si ions. Two PL bands peaking at ∼330 and ∼430 nm were observed from the samples at room temperature with and without annealing. It is found that the PL has a strong dependence on the stabilized N in the Si- and N-coimplanted SiO2 films. The PL may originate from a complex of Si, N, and O. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1838-1840 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intense short-wavelength photoluminescence (PL) observed at room temperature from thermal SiO2 films co-implanted with Si and C is reported. A flat Si profile was first implanted, followed by 1100 °C annealing for 60 min. C ions were subsequently used to be implanted into the same depth region. PL was observed from the as-implanted samples with and without annealing. The PL intensity increases with annealing temperature. Comparing the PL spectra and the PL dynamics of the C-implanted, annealed, Si-implanted (CIASI) SiO2 films with those from Si- and C-implanted SiO2 films suggests that the interaction of Si and C in SiO2 films plays an important role in the luminescence in CIASI SiO2 films. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 743-745 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The application of a silicon-on-insulator substrate in a high-power integrated circuit is limited by the self-heating effect, caused by the poor thermal conductivity of the buried SiO2. We introduce tetrahedral amorphous-carbon thin films, formed by the filtered arc deposition method, as an alteration. We investigated the surface morphology, microstructure, and electrical properties of these films. The films deposited under a substrate bias of −200 V displayed outstanding surface topography (low surface roughness with the Rrms value under 0.5 nm) and excellent electrical property (breakdown field of 4.7 MV/cm). The film has a high content of sp3 bonds of carbon (87%) and low content of oxygen (〈2%). © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Clinical and experimental pharmacology and physiology 25 (1998), S. 0 
    ISSN: 1440-1681
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: 1. In conscious rabbits, when alerting stimuli elicit vasoconstriction in the ear vascular bed, there is little or no associated change in cardiac output (CO), as measured by chronically implanted Doppler ultrasonic probes.2. Local anaesthetic injected around the base of the ear substantially diminished the degree of the vasoconstriction elicited during responses.3. Our results emphasize that selective cutaneous vasoconstriction, an integral part of the response to alerting stimuli in conscious animals, is part of a patterned redistribution of the CO, organized by the brain.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 30 (1995), S. 2101-2107 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The influence of gap filler content on the fracture, fatigue crack initiation and propagation of AISI 316 stainless steel wide-gap brazed with nickel-based filler metal has been investigated. The brazed joints were found to consist of eutectic, intermetallic compound and solid solution. The volume of solid solution was observed to depend on the gap filler content and brazing temperature. Tensile tests with extra small strain gauge bonded at the centre of the joints showed that the strength and elongation of the brazed joints increased with brazing temperature, and the addition of gap filler was able to improve the load-carrying capacity of the brazed joints only when the brazing temperature was high enough. Fatigue crack initiation and growth under displacement amplitude control were also carried out. Crack closure in the brazed joints was determined by means of back face strain on the compact tension specimen used. The introduction of gap filler was able to increase the fatigue and fracture resistance of the brazed joints when a suitable brazing temperature was used. Crack deflection, branching and uncracked ligament bridging behind the crack tip were observable along the crack paths. Experimental results showed that gap filler was able to enhance the crack closure caused by roughness and ligament bridging.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Hoboken, NJ : Wiley-Blackwell
    AIChE Journal 12 (1966), S. 610-612 
    ISSN: 0001-1541
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
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