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  • 1
    Electronic Resource
    Electronic Resource
    Study of alpha-radiation-induced deep levels in p-type silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4240-4247 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels introduced by 5.48 MeV alpha particles in p-type silicon have been studied using deep-level transient spectroscopy. The generation rates of these defects have been obtained up to a dose of 1.2×1011 α particles/cm2. Detailed data have been obtained on the electrical characteristics of the two deep levels in the lower-half band gap at Ev+0.21 eV and Ev+0.35 eV and one level in the upper-half gap of silicon at Ec−0.25 eV introduced by irradiation. These characteristics include emission rate signatures, carrier capture cross sections, and their temperature dependence and deep-level concentrations. Detailed isochronal annealing measurements have been performed to obtain data on the annealing behavior of the deep-level defects and also to help identify these centers. Some interesting phenomena relating to temporal changes in our deep level spectra stimulated by minority carrier injection have been observed and discussed in the light of the available literature on radiation-induced defects in silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352803
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of deep levels introduced by alpha radiation in n-type silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3698-3708 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed deep-level transient spectroscopy study of the characteristics of deep-level defects introduced by 5.48 MeV alpha particles in low-doped n-Si is reported. The deep-level characteristics studied include emission rate signatures, activation energies, capture cross sections and their temperature dependence, and defect concentrations and their spatial profiles. At least five deep levels in the upper-half band gap and two levels in the lower-half gap have been observed as a result of irradiation and characterized in detail. A systematic study of their generation rates up to a dose of about 3×1010 alpha particles/cm2 has been performed providing insights into the dose dependence of their formation mechanisms. Interesting room temperature transformation phenomena have been observed in our deep-level spectra during room temperature storage of the irradiated samples. Extensive isochronal thermal annealing measurements have been carried out to obtain data on the anneal-out characteristics of the radiation-induced deep levels and to identify these with the known defects wherever possible. A number of new annealed-in levels have been observed during this investigation. A detailed comparison with the published results is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352930
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  • 3
    Electronic Resource
    Electronic Resource
    α-radiation-induced deep levels in low-doped n-type silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 887-889 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Observations on deep levels introduced in silicon by α-particle irradiation are reported. Low-doped n-type samples are used and deep level transient spectroscopy is applied to detect the deep levels. Preliminary results provide evidence for some new defect states in addition to those previously reported. The study also reveals interesting metastability and room-temperature transformation effects associated with some of the deep levels introduced.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346752
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  • 4
    Electronic Resource
    Electronic Resource
    Interaction of α-radiation induced defects with Pd-related deep levels in silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7737-7744 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results of a detailed deep level transient spectroscopy study of Pd-doped p+n Si diodes irradiated with 5.48 MeV α particles are presented, which also include investigations of isochronal annealing behavior of the deep level spectra up to a temperature of 350–400 °C. An extended comparison with results obtained on reference samples as well as with previously published results of deep level studies on Pd-doped samples (unirradiated) and on undoped α-irradiated samples provides valuable information, since the same starting material is used in all these studies. It is observed that, in general, the Pd-related deep levels increase in concentration upon irradiation at the expense of α-radiation-induced levels. In particular, the A center sharply decreases in concentration upon post-irradiation annealing with a corresponding increase in the concentration of the dominant Pd-related level. The results also show that, contrary to the previously held belief, two well-known Pd-related levels at Ec−0.37 eV and Ec−0.59 eV are not states of the same defect and an off-center/on-center substitutional Pd-vacancy model for the defects corresponding to Ec−0.18 eV and Ec−0.22 eV Pd-related levels cannot explain new data presented here. In the reference (undoped, heat treated) samples, a few levels are observed after α-irradiation or post-irradiation annealing which were not detected in the untreated diodes, pointing to their relationship to quenched-in defects. A new annealed-in hole level H(α-Pd) at Ev+0.27 eV is observed which seems to be a complex of Pd with some α-irradiation-induced defect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356605
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  • 5
    Electronic Resource
    Electronic Resource
    Controversy regarding the 0.85-eV deep hole level in GaP (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2690-2693 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal emission rate data have been obtained on a 0.85-eV deep hole level in liquid-phase-epitaxial GaP light-emitting diodes using dark capacitance transients. Published emission rate data on this level exist for vapor-phase-epitaxial GaP. Detailed comparison with available data reveals a wide spread in emission rates casting serious doubts on the hitherto presumed origin of this level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337908
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  • 6
    Electronic Resource
    Electronic Resource
    Sensitive thermometry using capacitance variation of GaP LEDs
    Amsterdam : Elsevier
    Solid State Electronics 30 (1987), S. 639-641 
    Details
    ISSN: 0038-1101
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1101(87)90223-1
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  • 7
    Electronic Resource
    Electronic Resource
    Micro high-performance liquid chromatographic assay of acetaminophen and its major metabolites in plasma and urine
    Amsterdam : Elsevier
    Journal of Chromatography B: Biomedical Sciences and Applications 339 (1985), S. 198-202 
    Details
    ISSN: 0378-4347
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/S0378-4347(00)84644-7
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  • 8
    Electronic Resource
    Electronic Resource
    Positronium Beam Production by Positron-Gas Interactions (1992)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 28-29 (Jan. 1992), p. 347-364 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.28-29.347.pdf
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  • 9
    Electronic Resource
    Electronic Resource
    Cell kinetics of human gastric mucosa and gastric cancer in organ culture (1991)
    Springer
    Virchows Archiv 418 (1991), S. 457-461 
    Details
    ISSN: 1432-2307
    Keywords: Gastric mucosa ; Gastrointestinal neoplasms ; Cell cycle ; Organ culture
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary The cell kinetics of human gastric epithelium in organ culture have been measured using flash labelling with tritiated thymidine and the metaphase arrest technique to estimate cell birth rates. Normal gastric antral and body mucosa have been compared with mucosa showing gastritis and gastric carcinoma. Labelling indices with tritiated thymidine in normal gastric mucosa declined over a 48-h period suggesting that essential growth factors were lacking. Labelling indices and cell birth rates were higher in gastritis than in normal mucosa and highest in gastric carcinoma. Labelling indices were higher in intestinal-type gastric carcinoma than diffuse carcinoma. In metaphase arrest experiments carcinomas showed on average an eightfold increase in resistance to the metaphase-arresting properties of vincristine when compared with normal mucosa. The validity of using the metaphase arrest technique to measure cell birth rate in gastric cancers in view of this vincristine resistance is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01605933
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  • 10
    Electronic Resource
    Electronic Resource
    Non-exponential dark capacitance transients from red-emitting GaP LED's — Field and edge effects on the 0.75 eV centre (1986)
    Springer
    Applied physics 40 (1986), S. 129-132 
    Details
    ISSN: 1432-0630
    Keywords: 71.55.Fr ; 85.60.Jb ; 85.30.De
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The origin of the non-exponential behaviour of the previously reported [2] dark capacitance transients from red-emitting GaP LED's has been investigated in detail. In particular, the effects of the electric field and the junction edge-region on hole-emission from the 0.75 eV level has been studied. A small apparent electric-field enhancement of the emission rate has been shown to be caused predominantly by junction edge effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616489
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