Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Electric-Field-Enhanced Thermal Emission from Osmium-Related Deep Level in n-GaAs (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Advances in science and technology Vol. 46 (Oct. 2006), p. 73-78 
    Details
    ISSN: 1662-0356
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Natural Sciences in General , Technology
    Notes: Deep-level defects related with 5d transition metal, osmium (Os) have been studied in ntypeGaAs. Os has been incorporated in epitaxial n-GaAs layers in situ, during growth by lowpressuremetal-organic chemical vapour phase epitaxy (MOVPE) technique. Mesa p+nn+ junctiondiodes are fabricated for investigations by deep level transient spectroscopy (DLTS). Two deeplevelpeaks, observed in majority carrier (electron) emission spectra, Os1 and Os2, show asignificant shift in peak positions to lower temperatures with the applied junction reverse bias,demonstrating enhancement of the thermal emission rate by the junction electric field. DoublecorrelationDLTS (DDLTS) measurements have been employed for accurate quantitativeinvestigations of the observed field dependence. However, in view of the relatively smallconcentration of the deep level Os1, this technique is found to yield reliable data only for the deeplevel corresponding to the dominant peak, Os2. Detailed data have been obtained on the field effectfor Os2, extending over junction electric field values 3 x 106 V/m - 1.2 x 107 V/m. The measuredemission rate signatures show a reduction of the thermal activation energy from 0.48 eV to 0.21 eVfor Os2 over this electric field range. Analysis of the data in terms of the recent theoretical work onfield dependence indicates that Os2 is associated with a substitutional Os donor
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/42/transtech_doi~10.4028%252Fwww.scientific.net%252FAST.46.73.pdf
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Deep levels in alpha-irradiated platinum doped n-type silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2553-2555 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deep level transient spectroscopy technique has been used to study the interaction of 5.48 MeV α particles with deep levels in Pt-doped n-type silicon. Production rates and annealing behaviors of alpha-radiation-induced levels in the presence of platinum have been investigated. Isochronal annealing characteristics of Pt-related levels before and after irradiation have also been studied. Our results are compared to published data on electron irradiation of Si:Pt.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357549
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Characterization of deep levels introduced by alpha radiation in n-type silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3698-3708 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed deep-level transient spectroscopy study of the characteristics of deep-level defects introduced by 5.48 MeV alpha particles in low-doped n-Si is reported. The deep-level characteristics studied include emission rate signatures, activation energies, capture cross sections and their temperature dependence, and defect concentrations and their spatial profiles. At least five deep levels in the upper-half band gap and two levels in the lower-half gap have been observed as a result of irradiation and characterized in detail. A systematic study of their generation rates up to a dose of about 3×1010 alpha particles/cm2 has been performed providing insights into the dose dependence of their formation mechanisms. Interesting room temperature transformation phenomena have been observed in our deep-level spectra during room temperature storage of the irradiated samples. Extensive isochronal thermal annealing measurements have been carried out to obtain data on the anneal-out characteristics of the radiation-induced deep levels and to identify these with the known defects wherever possible. A number of new annealed-in levels have been observed during this investigation. A detailed comparison with the published results is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352930
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Interaction of α-radiation induced defects with Pd-related deep levels in silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7737-7744 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results of a detailed deep level transient spectroscopy study of Pd-doped p+n Si diodes irradiated with 5.48 MeV α particles are presented, which also include investigations of isochronal annealing behavior of the deep level spectra up to a temperature of 350–400 °C. An extended comparison with results obtained on reference samples as well as with previously published results of deep level studies on Pd-doped samples (unirradiated) and on undoped α-irradiated samples provides valuable information, since the same starting material is used in all these studies. It is observed that, in general, the Pd-related deep levels increase in concentration upon irradiation at the expense of α-radiation-induced levels. In particular, the A center sharply decreases in concentration upon post-irradiation annealing with a corresponding increase in the concentration of the dominant Pd-related level. The results also show that, contrary to the previously held belief, two well-known Pd-related levels at Ec−0.37 eV and Ec−0.59 eV are not states of the same defect and an off-center/on-center substitutional Pd-vacancy model for the defects corresponding to Ec−0.18 eV and Ec−0.22 eV Pd-related levels cannot explain new data presented here. In the reference (undoped, heat treated) samples, a few levels are observed after α-irradiation or post-irradiation annealing which were not detected in the untreated diodes, pointing to their relationship to quenched-in defects. A new annealed-in hole level H(α-Pd) at Ev+0.27 eV is observed which seems to be a complex of Pd with some α-irradiation-induced defect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356605
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Simple method for direct synthesis of YBa2Cu4O8 at atmospheric oxygen pressure (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 257-259 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple method for the synthesis of YBa2Cu4O8 superconductor at oxygen pressure of 1 atm is reported. The starting copper compound Cu2 (CN)2 makes it possible to synthesize near single phase material directly, without the use of reaction rate enhancers or wet chemical methods previously considered necessary. Resistivity and magnetic susceptibility measurements confirm the presence of bulk superconductivity at 81 K previously achieved only in YBa2Cu4O8 material synthesized at high oxygen pressure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110359
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Sensitive thermometry using capacitance variation of GaP LEDs
    Amsterdam : Elsevier
    Solid State Electronics 30 (1987), S. 639-641 
    Details
    ISSN: 0038-1101
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1101(87)90223-1
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Multiphoton transitions in semiconductors in the non-perturbative approach
    Amsterdam : Elsevier
    Solid State Communications 70 (1989), S. 479-484 
    Details
    ISSN: 0038-1098
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0038-1098(89)91084-3
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Electrical and infrared characterization of the semiconducting phases of YBa"2Cu"3O"6"+"x
    Amsterdam : Elsevier
    Solid State Communications 92 (1994), S. 607-611 
    Details
    ISSN: 0038-1098
    Keywords: A: high-T"c superconductors, semiconductors ; C: point defects ; D: electronic transport, optical properties
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1098(94)00542-7
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    “0.75 eV killer centre” in red-emitting GaP LEDs (1983)
    Springer
    Applied physics 32 (1983), S. 223-224 
    Details
    ISSN: 1432-0630
    Keywords: 71.55.Fr ; 85.60.Jb ; 85.30.De
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Dark transient capacitance measurements have been used to investigate the deeplevel content of red GaP LEDs. Thermal emission rate data is obtained and the 0.75 eV “killer” centre is identified from the signature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00820265
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Bi-refringence observations of strain and plastic deformation in GaP (1980)
    Springer
    Journal of materials science 15 (1980), S. 781-784 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00551746
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...