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  • 1
    Electronic Resource
    Electronic Resource
    Size effects of 0.8SrBi2Ta2O9–0.2Bi3TiNbO9 thin films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1610-1612 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The size effects of 0.8SrBi2Ta2O9–0.2Bi3TiNbO9 thin films, prepared by metalorganic deposition technique, were studied by determining how the ferroelectric properties vary with film thickness and grain size. It was found that the ferroelectric properties were determined by the grain size, and not by the thickness of the film in our studied thickness range of 80–500 nm. A 80 nm thick film showed good ferroelectric properties similar to the 500 nm thick film. The possible mechanisms for the size effects in SBT–BTN films are discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366872
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  • 2
    Electronic Resource
    Electronic Resource
    Laser-assisted low temperature processing of Pb(Zr, Ti)O3 thin film (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1958-1960 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method for lowering the processing temperature of PbZr1−xTixO3 (PZT) films was developed utilizing a laser-assisted two-step process. In the first step, perovskite phase was initiated in the PZT films to a furnace anneal at low temperatures in the range of 470–550 °C, depending on the Zr/Ti ratio. Later, the films were laser annealed (using KrF excimer laser) at room temperature to grow the perovskite phase, and to improve microstructure and ferroelectric properties. It was found that this two-step process was very effective in producing excellent quality ferroelectric PZT films at low temperatures. It should be noted that although laser annealing of amorphous and/or pyrochlore films directly (one-step process) produced perovskite phase, the ferroelectric properties of these films, irrespective of the composition, were rather unattractive. Some possible reasons for the ineffectiveness of the one-step process were discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122334
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of poling on the switching properties of SrBi2Ta2O9 films (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2961-2963 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of poling on the switching properties of SrBi2Ta2O9 films was investigated via the technique of switching current testing. The samples with 660 nm thickness were poled under dc voltage ranging from 1 to 8.25 V, and for different duration from 1 to 80 min. After poling, both the net-switched charge and switching time first jumped to higher values, then decreased with the elapse of time. The decreases were separated into two regimes, a fast and slow regime. The change of net-switched charge and switching time with poling voltage and poling time showed nonmonotonic behavior. These results were explained by the change of domain kinetics and the redistribution of charge carriers under both the applied and depolarization field. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1471935
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of uniaxial stress on the polarization of SrBi2Ta2O9 thin films (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3103-3105 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of uniaxial stress on the ferroelectric properties of SrBi2Ta2O9 films with different thicknesses (330, 440, and 660 nm) has been investigated. It is found that both the remnant polarization (Pr) and the spontaneous polarization (Ps) decrease with the application of compressive stress, but increase with the application of tensile stress. And the changes of Pr and Ps become larger for thicker films. For the 660 nm film, as the stress changed from −100 MPa (compressive) to +100 MPa (tensile), the Pr increases from −1.8% to +1.8%. Testing voltages in the range of 3–6 V showed no impact on the amplitude of change on the polarization under mechanical stress. Mechanical stress also did not show significant impact on the coercive field. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126537
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